在驱(qu)动MOS晶体管Q2导通(tong)(tong)(tong)期间(jian)的开始(shi)部分，D1和(he)(he)S2将导通(tong)(tong)(tong)。但是(shi)当(dang)Ql已经(jing)关(guan)断并且(qie)基...在驱(qu)动MOS晶体管Q2导通(tong)(tong)(tong)期间(jian)的开始(shi)部分，D1和(he)(he)S2将导通(tong)(tong)(tong)。但是(shi)当(dang)Ql已经(jing)关(guan)断并且(qie)基—射结间(jian)的恢复电流(liu)已经(jing)变(bian)为零的时候，在绕组P2的电压通(tong)(tong)(tong)过R1使Dl和(he)(he)S2反偏关(guan)断。所有(you)...
功率(lv)(lv)开关(guan)管(guan)(guan)(guan)的(de)种类很多，如(ru)巨(ju)型晶(jing)(jing)(jing)体(ti)管(guan)(guan)(guan)GTR、快(kuai)速晶(jing)(jing)(jing)闸(zha)管(guan)(guan)(guan)SCR、门(men)极(ji)(ji)可关(guan)断晶(jing)(jing)(jing)闸(zha)管(guan)(guan)(guan)GTO...功率(lv)(lv)开关(guan)管(guan)(guan)(guan)的(de)种类很多，如(ru)巨(ju)型晶(jing)(jing)(jing)体(ti)管(guan)(guan)(guan)GTR、快(kuai)速晶(jing)(jing)(jing)闸(zha)管(guan)(guan)(guan)SCR、门(men)极(ji)(ji)可关(guan)断晶(jing)(jing)(jing)闸(zha)管(guan)(guan)(guan)GTO、功率(lv)(lv)场(chang)效应晶(jing)(jing)(jing)体(ti)管(guan)(guan)(guan)P- MOSFET和绝缘栅(zha)双(shuang)极(ji)(ji)型晶(jing)(jing)(jing)体(ti)管(guan)(guan)(guan)IGBT等(deng)。双(shuang)极(ji)(ji)结型晶(jing)(jing)(jing)体(ti)管(guan)(guan)(guan)( BJT)是一...
由于在栅极(ji)与半导体之间(jian)有绝缘(yuan)二氧化硅(gui)的(de)关系，MOS器(qi)(qi)件的(de)输(shu)入阻(zu)(zu)抗非常高(gao)，此(ci)一...由于在栅极(ji)与半导体之间(jian)有绝缘(yuan)二氧化硅(gui)的(de)关系，MOS器(qi)(qi)件的(de)输(shu)入阻(zu)(zu)抗非常高(gao)，此(ci)一特色使MOSFET在功率(lv)器(qi)(qi)件的(de)应(ying)用(yong)相当引(yin)人注目，因为高(gao)输(shu)入阻(zu)(zu)抗的(de)关系，栅极(ji)漏电流非常...
在CMOS应用(yong)(yong)中能同(tong)时将(jiang)p沟(gou)道(dao)与n沟(gou)道(dao)MOSFET制作在同(tong)一(yi)片(pian)芯片(pian)上(shang)．需(xu)(xu)要(yao)额外的(de)掺杂(za)及...在CMOS应用(yong)(yong)中能同(tong)时将(jiang)p沟(gou)道(dao)与n沟(gou)道(dao)MOSFET制作在同(tong)一(yi)片(pian)芯片(pian)上(shang)．需(xu)(xu)要(yao)额外的(de)掺杂(za)及扩(kuo)散步骤，以便在衬底中形成(cheng)“阱”或“盆(tub)”．阱中的(de)掺杂(za)种(zhong)类(lei)与周围衬底不同(tong)．...
单片(pian)MOS开关(guan)电(dian)(dian)源(yuan)(yuan)的典型应(ying)用(yong)电(dian)(dian)路如(ru)(ru)图1-13所(suo)(suo)示(shi)(shi)。由于单端(duan)(duan)反激(ji)式开关(guan)电(dian)(dian)源(yuan)(yuan)电(dian)(dian)路简(jian)单...单片(pian)MOS开关(guan)电(dian)(dian)源(yuan)(yuan)的典型应(ying)用(yong)电(dian)(dian)路如(ru)(ru)图1-13所(suo)(suo)示(shi)(shi)。由于单端(duan)(duan)反激(ji)式开关(guan)电(dian)(dian)源(yuan)(yuan)电(dian)(dian)路简(jian)单、所(suo)(suo)用(yong)元件(jian)少，输出(chu)与输人间有电(dian)(dian)气隔(ge)离，能方便地实现多路输出(chu)，开关(guan)管驱(qu)动(dong)简(jian)单，所(suo)(suo)...
导(dao)通(tong)瞬(shun)间基(ji)(ji)极过驱(qu)动峰值(zhi)(zhi)输入电流(liu)(liu)／bl为(wei)了保(bao)(bao)证迅速(su)导(dao)通(tong)集电极电流(liu)(liu)，需要有一(yi)个持(chi)...导(dao)通(tong)瞬(shun)间基(ji)(ji)极过驱(qu)动峰值(zhi)(zhi)输入电流(liu)(liu)／bl为(wei)了保(bao)(bao)证迅速(su)导(dao)通(tong)集电极电流(liu)(liu)，需要有一(yi)个持(chi)续时间很(hen)短且峰值(zhi)(zhi)约为(wei)导(dao)通(tong)期间平均值(zhi)(zhi)2～3倍(bei)的基(ji)(ji)极尖峰电流(liu)(liu)供给基(ji)(ji)极。该尖峰的持(chi)续时...
