典型应用电(dian)路(lu)(lu)(lu)是由(you)驱(qu)动2个N沟道(dao)MOSFET管(guan)或IGBT组成的(de)半(ban)桥驱(qu)动电(dian)路(lu)(lu)(lu)。固定的(de)栅极参...典型应用电(dian)路(lu)(lu)(lu)是由(you)驱(qu)动2个N沟道(dao)MOSFET管(guan)或IGBT组成的(de)半(ban)桥驱(qu)动电(dian)路(lu)(lu)(lu)。固定的(de)栅极参考输出通道(dao)(L0)用于下端连接(jie)(jie)的(de)功率场效应管(guan)T2，浮动的(de)栅极输出通道(dao)(HO)用于上端连接(jie)(jie)...
流(liu)源(yuan)(yuan),是一种(zhong)(zhong)能(neng)(neng)向(xiang)负(fu)载提供恒(heng)定(ding)(ding)电(dian)(dian)流(liu)的电(dian)(dian)源(yuan)(yuan)装置(zhi)，它在外(wai)界电(dian)(dian)网电(dian)(dian)源(yuan)(yuan)产(chan)(chan)生(sheng)波(bo)动(dong)和(he)阻抗...流(liu)源(yuan)(yuan),是一种(zhong)(zhong)能(neng)(neng)向(xiang)负(fu)载提供恒(heng)定(ding)(ding)电(dian)(dian)流(liu)的电(dian)(dian)源(yuan)(yuan)装置(zhi)，它在外(wai)界电(dian)(dian)网电(dian)(dian)源(yuan)(yuan)产(chan)(chan)生(sheng)波(bo)动(dong)和(he)阻抗特性(xing)发生(sheng)变化时仍能(neng)(neng)使(shi)输出电(dian)(dian)流(liu)保持恒(heng)定(ding)(ding)。恒(heng)流(liu)源(yuan)(yuan)电(dian)(dian)路具有输出电(dian)(dian)流(liu)恒(heng)定(ding)(ding)、温度稳(wen)定(ding)(ding)性(xing)好...
作(zuo)用：半(ban)导(dao)体(ti)稳(wen)压二极(ji)管(guan)亦(yi)纳二极(ji)管(guan)（ZenerDiode）或(huo)电(dian)压调整(zheng)二极(ji)，简称稳(wen)压管(guan)。...作(zuo)用：半(ban)导(dao)体(ti)稳(wen)压二极(ji)管(guan)亦(yi)纳二极(ji)管(guan)（ZenerDiode）或(huo)电(dian)压调整(zheng)二极(ji)，简称稳(wen)压管(guan)。稳(wen)压管(guan)和半(ban)导(dao)体(ti)二极(ji)管(guan)都具有(you)单向导(dao)电(dian)性质，仅仅靠观(guan)察外形(xing)，有(you)时很(hen)难加以区别。例如...
场(chang)效应管(guan)(guan)：场(chang)效应管(guan)(guan)由多数载(zai)流子参与导(dao)电,称为单(dan)极(ji)型(xing)(xing)(xing)晶(jing)体管(guan)(guan).它也属(shu)于(yu)电压(ya)控制型(xing)(xing)(xing)...场(chang)效应管(guan)(guan)：场(chang)效应管(guan)(guan)由多数载(zai)流子参与导(dao)电,称为单(dan)极(ji)型(xing)(xing)(xing)晶(jing)体管(guan)(guan).它也属(shu)于(yu)电压(ya)控制型(xing)(xing)(xing)半导(dao)体器件(jian).具有(you)输(shu)入电阻高（108~109Ω）、噪声小、功耗(hao)低、动态范围大(da)、易于(yu)集成、...
驱动(dong)(dong)方(fang)式(shi)是对简(jian)易(yi)(yi)方(fang)式(shi)的(de)(de)一(yi)种(zhong)初步(bu)改进(jin)(jin),它不(bu)但(dan)能(neng)(neng)降低(di)TTL器件(jian)的(de)(de)功(gong)率(lv)耗(hao)(hao)散,也(ye)能(neng)(neng)保(bao)证...驱动(dong)(dong)方(fang)式(shi)是对简(jian)易(yi)(yi)方(fang)式(shi)的(de)(de)一(yi)种(zhong)初步(bu)改进(jin)(jin),它不(bu)但(dan)能(neng)(neng)降低(di)TTL器件(jian)的(de)(de)功(gong)率(lv)耗(hao)(hao)散,也(ye)能(neng)(neng)保(bao)证较高的(de)(de)开通速度(du)。驱动(dong)(dong)方(fang)式(shi)可(ke)进(jin)(jin)一(yi)步(bu)改善驱动(dong)(dong)性能(neng)(neng),不(bu)但(dan)关断时间可(ke)以进(jin)(jin)一(yi)步(bu)缩(suo)短,开通时...
KIA设计(ji)生(sheng)产的(de)(de)超结(jie)(jie)场(chang)效应管（Super Junction MOSFET）用先进的(de)(de)耐(nai)压原理和(he)优化(hua)的(de)(de)...KIA设计(ji)生(sheng)产的(de)(de)超结(jie)(jie)场(chang)效应管（Super Junction MOSFET）用先进的(de)(de)耐(nai)压原理和(he)优化(hua)的(de)(de)设计(ji)结(jie)(jie)构(gou)，全新(xin)600~900V系(xi)列产品为系(xi)统(tong)应用提供充足的(de)(de)耐(nai)压余量(liang)，简(jian)化(hua)系(xi)统(tong)设计(ji)难度(du)，...
