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p沟道MOS管参数
P沟道MOS管

金属(shu)氧化物半导(dao)体(ti)(ti)场(chang)效应(MOS)晶(jing)体(ti)(ti)管(guan)(guan)可分为(wei)(wei)N沟(gou)道(dao)与P沟(gou)道(dao)两大类，P沟(gou)道(dao)硅(gui)(gui)MOS场(chang)效应晶(jing)体(ti)(ti)管(guan)(guan)在N型(xing)硅(gui)(gui)衬底上有两个(ge)P+区(qu)，分别叫做源(yuan)(yuan)(yuan)极(ji)(ji)(ji)(ji)和(he)漏(lou)极(ji)(ji)(ji)(ji)，两极(ji)(ji)(ji)(ji)之间不通导(dao)，柵极(ji)(ji)(ji)(ji)上加有足够的(de)(de)正电(dian)(dian)(dian)压(ya)(源(yuan)(yuan)(yuan)极(ji)(ji)(ji)(ji)接(jie)地)时(shi)，柵极(ji)(ji)(ji)(ji)下的(de)(de)N型(xing)硅(gui)(gui)表面(mian)呈现(xian)P型(xing)反型(xing)层(ceng)，成为(wei)(wei)连(lian)接(jie)源(yuan)(yuan)(yuan)极(ji)(ji)(ji)(ji)和(he)漏(lou)极(ji)(ji)(ji)(ji)的(de)(de)沟(gou)道(dao)。改(gai)变(bian)(bian)栅压(ya)可以改(gai)变(bian)(bian)沟(gou)道(dao)中的(de)(de)电(dian)(dian)(dian)子密度，从而改(gai)变(bian)(bian)沟(gou)道(dao)的(de)(de)电(dian)(dian)(dian)阻(zu)。这(zhei)种MOS场(chang)效应晶(jing)体(ti)(ti)管(guan)(guan)称为(wei)(wei)P沟(gou)道(dao)增强型(xing)场(chang)效应晶(jing)体(ti)(ti)管(guan)(guan)。如果N型(xing)硅(gui)(gui)衬底表面(mian)不加栅压(ya)就已存在P型(xing)反型(xing)层(ceng)沟(gou)道(dao)，加上适当(dang)的(de)(de)偏压(ya)，可使沟(gou)道(dao)的(de)(de)电(dian)(dian)(dian)阻(zu)增大或减(jian)小。这(zhei)样的(de)(de)MOS场(chang)效应晶(jing)体(ti)(ti)管(guan)(guan)称为(wei)(wei)P沟(gou)道(dao)耗尽型(xing)场(chang)效应晶(jing)体(ti)(ti)管(guan)(guan)。统称为(wei)(wei)PMOS晶(jing)体(ti)(ti)管(guan)(guan)。

P沟道(dao)(dao)MOS晶体(ti)管(guan)的空穴迁移率(lv)低,因而在MOS晶体(ti)管(guan)的几何尺寸(cun)和(he)工(gong)作电(dian)(dian)(dian)压(ya)(ya)绝对(dui)值(zhi)相(xiang)等的情况(kuang)下，P沟道(dao)(dao)MOS管(guan)的跨导小(xiao)于N沟道(dao)(dao)MOS晶体(ti)管(guan)。此(ci)外，P沟道(dao)(dao)MOS晶体(ti)管(guan)阈(yu)值(zhi)电(dian)(dian)(dian)压(ya)(ya)的绝对(dui)值(zhi)一般偏高，要(yao)求有(you)较高的工(gong)作电(dian)(dian)(dian)压(ya)(ya)。它的供电(dian)(dian)(dian)电(dian)(dian)(dian)源的电(dian)(dian)(dian)压(ya)(ya)大小(xiao)和(he)极性,与(yu)双极型晶体(ti)管(guan)——晶体(ti)管(guan)逻辑(ji)(ji)电(dian)(dian)(dian)路不兼容。PMOS因逻辑(ji)(ji)摆幅(fu)大，充电(dian)(dian)(dian)放电(dian)(dian)(dian)过程长，加之器件跨导小(xiao)，所(suo)以(yi)工(gong)作速度更低，在NMOS电(dian)(dian)(dian)路(见N沟道(dao)(dao)金属—氧化(hua)物(wu)—半(ban)导体(ti)集成(cheng)电(dian)(dian)(dian)路)出现之后，多数(shu)已为NMOS电(dian)(dian)(dian)路所(suo)取代(dai)。只是,因P沟道(dao)(dao)MOS管(guan)电(dian)(dian)(dian)路工(gong)艺(yi)简单,价格便宜，有(you)些中规(gui)模和(he)小(xiao)规(gui)模数(shu)字控制电(dian)(dian)(dian)路仍采用P沟道(dao)(dao)MOS管(guan)电(dian)(dian)(dian)路技术。

PMOS集(ji)成电(dian)(dian)(dian)(dian)路(lu)(lu)是一(yi)种(zhong)适合在(zai)低(di)速、低(di)频领域内(nei)应用(yong)的(de)(de)(de)器件。P沟道MOS管集(ji)成电(dian)(dian)(dian)(dian)路(lu)(lu)采用(yong)-24V电(dian)(dian)(dian)(dian)压供电(dian)(dian)(dian)(dian)。如图5所示的(de)(de)(de)CMOS-PMOS接(jie)口电(dian)(dian)(dian)(dian)路(lu)(lu)采用(yong)两种(zhong)电(dian)(dian)(dian)(dian)源供电(dian)(dian)(dian)(dian)。采用(yong)直接(jie)接(jie)口方式，一(yi)般(ban)CMOS的(de)(de)(de)电(dian)(dian)(dian)(dian)源电(dian)(dian)(dian)(dian)压选择在(zai)10～12V就能满足(zu)PMOS对输入电(dian)(dian)(dian)(dian)平的(de)(de)(de)要求(qiu)。

P沟道MOS管导通条件

P沟(gou)道mos管(guan)(guan)(guan)作为开关，栅源(yuan)的(de)(de)(de)阀值为-0.4V，当栅源(yuan)的(de)(de)(de)电(dian)压差为-0.4V就会(hui)使(shi)DS导(dao)(dao)(dao)通，如(ru)果S为2.8V，G为1.8V，那(nei)么GS=-1V，mos管(guan)(guan)(guan)导(dao)(dao)(dao)通，D为2.8V如(ru)果S为2.8V，G为2.8V，VGSw那(nei)么mos管(guan)(guan)(guan)不导(dao)(dao)(dao)通，D为0V，所以(yi)，如(ru)果2.8V连(lian)(lian)(lian)接(jie)到(dao)S，要mos管(guan)(guan)(guan)导(dao)(dao)(dao)通为系统供电(dian)，系统连(lian)(lian)(lian)接(jie)到(dao)D，利用G控制。那(nei)么和(he)G相(xiang)连(lian)(lian)(lian)的(de)(de)(de)GPIO高(gao)电(dian)平要2.8-0.4=2.4V以(yi)上，才(cai)能使(shi)mos管(guan)(guan)(guan)关断，低电(dian)平使(shi)mos管(guan)(guan)(guan)导(dao)(dao)(dao)通。

如(ru)果(guo)控制G的(de)GPIO的(de)电(dian)(dian)压区域(yu)为(wei)(wei)1.8V，那(nei)么GPIO高电(dian)(dian)平(ping)的(de)时候为(wei)(wei)1.8V，GS为(wei)(wei)1.8-2.8=-1V，mos管(guan)导通(tong)，不能够关(guan)断(duan)。GPIO为(wei)(wei)低电(dian)(dian)平(ping)的(de)时候，假如(ru)0.1V，那(nei)么GS为(wei)(wei)0.1-2.8=-2.7V,mos管(guan)导通(tong)。这种情况下GPIO就不能够控制mos管(guan)的(de)导通(tong)和关(guan)闭(bi)。当栅源的(de)电(dian)(dian)压差为(wei)(wei)-0.4V就会使DS导通(tong)，如(ru)果(guo)S为(wei)(wei)5V，G为(wei)(wei)4V，那(nei)么GS=-1V，mos管(guan)导通(tong)，D为(wei)(wei)5V。

p沟道mos管参数

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本文(wen)主要是(shi)讲(jiang)述P沟道MOS管(guan)的参(can)数、型号。

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