充电(dian)(dian)(dian)mos管(guan),mos管(guan)双向充电(dian)(dian)(dian)电(dian)(dian)(dian)路原理图(tu)-KIA MOS管(guan)
信息来源:本站 日期:2025-05-28
MOS管实(shi)现双向充电(dian)的原理是通过控制两个背靠背连接的MOS管的栅极信号(hao),使(shi)得电(dian)流可以在(zai)两个方向上流动。
当控制(zhi)输出为(wei)高电平时(shi),一(yi)个(ge)(ge)MOS管导通,允许电流从(cong)(cong)一(yi)个(ge)(ge)方(fang)向(xiang)(xiang)(xiang)(xiang)流动(dong);当控制(zhi)输出为(wei)低电平时(shi),另一(yi)个(ge)(ge)MOS管导通,允许电流从(cong)(cong)相(xiang)反(fan)方(fang)向(xiang)(xiang)(xiang)(xiang)流动(dong)。这种设计使(shi)得(de)电流可以(yi)在两个(ge)(ge)方(fang)向(xiang)(xiang)(xiang)(xiang)上自由流动(dong),从(cong)(cong)而实现双(shuang)向(xiang)(xiang)(xiang)(xiang)充电功能。
电路结构:
双向(xiang)(xiang)充电(dian)(dian)电(dian)(dian)路通常由两(liang)个背靠背连(lian)接(jie)的MOS管(Q1和(he)Q2)组成。Q1和(he)Q2的源极(ji)和(he)漏极(ji)相连(lian),栅极(ji)分别(bie)由不同的控(kong)制(zhi)信号控(kong)制(zhi)。当(dang)控(kong)制(zhi)输出(chu)为高电(dian)(dian)平时,Q1导通,允许电(dian)(dian)流(liu)从VIN流(liu)向(xiang)(xiang)VOUT;当(dang)控(kong)制(zhi)输出(chu)为低(di)电(dian)(dian)平时,Q2导通,允许电(dian)(dian)流(liu)从VOUT流(liu)向(xiang)(xiang)VIN。
工作原理:
正向充电(dian)(dian)(dian):当(dang)控制输出为高(gao)电(dian)(dian)(dian)平(ping)时,Q1的栅源(yuan)电(dian)(dian)(dian)压Vgs大于阈值电(dian)(dian)(dian)压Vth,Q1导(dao)(dao)(dao)通。此(ci)时,A点电(dian)(dian)(dian)位降低,B点电(dian)(dian)(dian)压为VIN减去二极管导(dao)(dao)(dao)通电(dian)(dian)(dian)压,Q2的栅源(yuan)电(dian)(dian)(dian)压Vgs小(xiao)于阈值电(dian)(dian)(dian)压Vth,Q2不导(dao)(dao)(dao)通。因此(ci),电(dian)(dian)(dian)流从VIN经过Q1流向VOUT。
反向充电(dian)(dian)(dian)(dian):当(dang)控(kong)制输(shu)出为(wei)低电(dian)(dian)(dian)(dian)平时,Q2的(de)栅源电(dian)(dian)(dian)(dian)压Vgs大于阈(yu)(yu)值(zhi)电(dian)(dian)(dian)(dian)压Vth,Q2导(dao)通。此(ci)时,B点(dian)电(dian)(dian)(dian)(dian)位升高,A点(dian)电(dian)(dian)(dian)(dian)压为(wei)VIN减去二(er)极管导(dao)通电(dian)(dian)(dian)(dian)压的(de)负值(zhi),Q1的(de)栅源电(dian)(dian)(dian)(dian)压Vgs小于阈(yu)(yu)值(zhi)电(dian)(dian)(dian)(dian)压Vth,Q1不导(dao)通。因此(ci),电(dian)(dian)(dian)(dian)流(liu)(liu)从(cong)VOUT经过Q2流(liu)(liu)向VIN。
当控(kong)制输出(chu)为低电(dian)平时,Q1的栅源电(dian)压(ya)Vgs=0,Q1不(bu)导通Q2的栅源之间电(dian)压(ya)相(xiang)等,不(bu)导通,VOUT没有输出(chu)。
当(dang)控(kong)制(zhi)输出为(wei)高电(dian)(dian)(dian)(dian)平时(shi),Q1导(dao)通(tong)。A点(dian)(dian)(dian)电(dian)(dian)(dian)(dian)位变为(wei)低,B点(dian)(dian)(dian)电(dian)(dian)(dian)(dian)压(ya)(ya)为(wei)VIN-二极管Q导(dao)通(tong)电(dian)(dian)(dian)(dian)压(ya)(ya),对于Q2来说Vgs=0-(VIN-0.7)=0.7-VIN<Vgs(th),导(dao)通(tong),B点(dian)(dian)(dian)电(dian)(dian)(dian)(dian)压(ya)(ya)变为(wei)VIN,此时(shi)对于Q3来说,栅(zha)源电(dian)(dian)(dian)(dian)压(ya)(ya)Vgs=0-VIN=-VIN<Vgs(th),导(dao)通(tong),VIN到VOUT的输出。反之从(cong)VOUT到VIN也(ye)一(yi)样这(zhei)个电(dian)(dian)(dian)(dian)路为(wei)共控(kong)制(zhi)端(duan)的对称双向充电(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)路。
联系方式(shi):邹先生(sheng)
座机:0755-83888366-8022
手机(ji):18123972950(微信同号)
QQ:2880195519
联系地址:深圳(zhen)市龙华(hua)区(qu)英(ying)泰科汇广场(chang)2栋1902
搜索微信公(gong)(gong)众号:“KIA半导体”或(huo)扫(sao)码(ma)关注(zhu)官方微信公(gong)(gong)众号
关注官方微信公众(zhong)号:提供 MOS管 技术(shu)支持
免责声(sheng)明(ming):网站部分图(tu)文来(lai)源其它出处(chu),如(ru)有侵(qin)权请联系删除。