多(duo)谐振(zhen)(zhen)荡器(qi)(qi)：利用深度(du)正(zheng)反(fan)(fan)馈，通(tong)过阻(zu)容耦合(he)(he)使两(liang)个(ge)电子器(qi)(qi)件交替(ti)导通(tong)与截(jie)(jie)止，从而(er)...多(duo)谐振(zhen)(zhen)荡器(qi)(qi)：利用深度(du)正(zheng)反(fan)(fan)馈，通(tong)过阻(zu)容耦合(he)(he)使两(liang)个(ge)电子器(qi)(qi)件交替(ti)导通(tong)与截(jie)(jie)止，从而(er)自激产(chan)生(sheng)方波(bo)输出的振(zhen)(zhen)荡器(qi)(qi)。常用作方波(bo)发生(sheng)器(qi)(qi)。多(duo)谐振(zhen)(zhen)荡器(qi)(qi)是一(yi)种能产(chan)生(sheng)矩形波(bo)的自激...
该电(dian)(dian)(dian)(dian)(dian)路主要由锂电(dian)(dian)(dian)(dian)(dian)池保护专(zhuan)用集成(cheng)(cheng)电(dian)(dian)(dian)(dian)(dian)路DW01，充(chong)、放电(dian)(dian)(dian)(dian)(dian)控制(zhi)MOSFET1(内含两只(zhi)N沟(gou)道(dao)...该电(dian)(dian)(dian)(dian)(dian)路主要由锂电(dian)(dian)(dian)(dian)(dian)池保护专(zhuan)用集成(cheng)(cheng)电(dian)(dian)(dian)(dian)(dian)路DW01，充(chong)、放电(dian)(dian)(dian)(dian)(dian)控制(zhi)MOSFET1(内含两只(zhi)N沟(gou)道(dao)MOSFET)等(deng)部分组成(cheng)(cheng)，单体锂电(dian)(dian)(dian)(dian)(dian)池接在B+和B-之间，电(dian)(dian)(dian)(dian)(dian)池组从(cong)P+和P-输出电(dian)(dian)(dian)(dian)(dian)压(ya)。充(chong)电(dian)(dian)(dian)(dian)(dian)时，充(chong)...
二(er)(er)极管(guan)是电(dian)子电(dian)路中(zhong)很(hen)(hen)常(chang)用(yong)的元器件，非常(chang)常(chang)见，二(er)(er)极管(guan)具(ju)有正向(xiang)导通，反(fan)向(xiang)截止的...二(er)(er)极管(guan)是电(dian)子电(dian)路中(zhong)很(hen)(hen)常(chang)用(yong)的元器件，非常(chang)常(chang)见，二(er)(er)极管(guan)具(ju)有正向(xiang)导通，反(fan)向(xiang)截止的特性。在二(er)(er)极管(guan)的正向(xiang)端(duan)（正极）加正电(dian)压(ya)，负向(xiang)端(duan)（负极）加负电(dian)压(ya)，二(er)(er)极管(guan)导通，有...
在数字电(dian)子技术门电(dian)路(lu)中(zhong)，在脉冲(chong)信(xin)号的(de)作用下，二(er)极管时而(er)导(dao)通(tong)(tong)，时而(er)截(jie)(jie)止(zhi)(zhi)，相当...在数字电(dian)子技术门电(dian)路(lu)中(zhong)，在脉冲(chong)信(xin)号的(de)作用下，二(er)极管时而(er)导(dao)通(tong)(tong)，时而(er)截(jie)(jie)止(zhi)(zhi)，相当于(yu)开(kai)(kai)关的(de)“接通(tong)(tong)”和“关断”。二(er)极管由截(jie)(jie)止(zhi)(zhi)到(dao)(dao)开(kai)(kai)通(tong)(tong)所用的(de)时间称为开(kai)(kai)通(tong)(tong)时间，由开(kai)(kai)通(tong)(tong)到(dao)(dao)...
关于(yu)Flyback的次级侧整流二(er)极管(guan)的RC尖(jian)峰(feng)吸(xi)(xi)收问(wen)题(ti)(ti)，在(zai)处理此(ci)(ci)(ci)(ci)类尖(jian)峰(feng)问(wen)题(ti)(ti)上(shang)此(ci)(ci)(ci)(ci)处用(yong)(yong)...关于(yu)Flyback的次级侧整流二(er)极管(guan)的RC尖(jian)峰(feng)吸(xi)(xi)收问(wen)题(ti)(ti)，在(zai)处理此(ci)(ci)(ci)(ci)类尖(jian)峰(feng)问(wen)题(ti)(ti)上(shang)此(ci)(ci)(ci)(ci)处用(yong)(yong)RCD吸(xi)(xi)收会比用(yong)(yong)RC吸(xi)(xi)收效果更(geng)好，用(yong)(yong)RCD吸(xi)(xi)收，其整流管(guan)尖(jian)峰(feng)电(dian)压(ya)可以(yi)压(ya)得更(geng)低(合理的参数(shu)...
高(gao)频(pin)(pin)(pin)电(dian)容(rong)基本上是由(you)无源(yuan)(yuan)元(yuan)件(jian)(jian)(jian)、有源(yuan)(yuan)器件(jian)(jian)(jian)和(he)无源(yuan)(yuan)网(wang)络组(zu)成(cheng)的(de)(de)。高(gao)频(pin)(pin)(pin)电(dian)路(lu)中(zhong)(zhong)使(shi)(shi)(shi)用的(de)(de)元(yuan)器...高(gao)频(pin)(pin)(pin)电(dian)容(rong)基本上是由(you)无源(yuan)(yuan)元(yuan)件(jian)(jian)(jian)、有源(yuan)(yuan)器件(jian)(jian)(jian)和(he)无源(yuan)(yuan)网(wang)络组(zu)成(cheng)的(de)(de)。高(gao)频(pin)(pin)(pin)电(dian)路(lu)中(zhong)(zhong)使(shi)(shi)(shi)用的(de)(de)元(yuan)器件(jian)(jian)(jian)与低频(pin)(pin)(pin)电(dian)路(lu)中(zhong)(zhong)使(shi)(shi)(shi)用的(de)(de)元(yuan)器件(jian)(jian)(jian)频(pin)(pin)(pin)率特(te)性是不同的(de)(de)。高(gao)频(pin)(pin)(pin)电(dian)路(lu)中(zhong)(zhong)无源(yuan)(yuan)线性元(yuan)件(jian)(jian)(jian)主要(yao)是电(dian)阻（...
