KNF45100A场(chang)效应(ying)管(guan)漏(lou)源(yuan)(yuan)击穿(chuan)电(dian)压1000V，漏(lou)极电(dian)流6A，极低导(dao)通电(dian)阻RDS(开(kai)启(qi)) 2.0...KNF45100A场(chang)效应(ying)管(guan)漏(lou)源(yuan)(yuan)击穿(chuan)电(dian)压1000V，漏(lou)极电(dian)流6A，极低导(dao)通电(dian)阻RDS(开(kai)启(qi)) 2.0mΩ，最大限度(du)地减少导(dao)电(dian)损耗；低电(dian)荷最小(xiao)化开(kai)关损耗，低反向传输电(dian)容，开(kai)关速度(du)快，...
脉(mai)(mai)冲(chong)(chong)高(gao)电平(ping)(ping)持续时(shi)间(jian)（Ton）：是脉(mai)(mai)冲(chong)(chong)信(xin)(xin)号处(chu)于高(gao)电平(ping)(ping)状态的(de)(de)(de)时(shi)间(jian)。 脉(mai)(mai)冲(chong)(chong)周期（T）...脉(mai)(mai)冲(chong)(chong)高(gao)电平(ping)(ping)持续时(shi)间(jian)（Ton）：是脉(mai)(mai)冲(chong)(chong)信(xin)(xin)号处(chu)于高(gao)电平(ping)(ping)状态的(de)(de)(de)时(shi)间(jian)。 脉(mai)(mai)冲(chong)(chong)周期（T）：是脉(mai)(mai)冲(chong)(chong)信(xin)(xin)号从开始(shi)到重复出现所需的(de)(de)(de)时(shi)间(jian)长度（即：高(gao)电平(ping)(ping)时(shi)间(jian)+低电平(ping)(ping)时(shi)间(jian)）。
当外部电(dian)(dian)(dian)(dian)源(yuan)(yuan)接入(ru)模块(kuai)输(shu)入(ru)端(duan)时(shi)，充(chong)(chong)电(dian)(dian)(dian)(dian)管理IC将输(shu)出一定(ding)的电(dian)(dian)(dian)(dian)流和电(dian)(dian)(dian)(dian)压(ya)来给电(dian)(dian)(dian)(dian)池(chi)充(chong)(chong)电(dian)(dian)(dian)(dian)。...当外部电(dian)(dian)(dian)(dian)源(yuan)(yuan)接入(ru)模块(kuai)输(shu)入(ru)端(duan)时(shi)，充(chong)(chong)电(dian)(dian)(dian)(dian)管理IC将输(shu)出一定(ding)的电(dian)(dian)(dian)(dian)流和电(dian)(dian)(dian)(dian)压(ya)来给电(dian)(dian)(dian)(dian)池(chi)充(chong)(chong)电(dian)(dian)(dian)(dian)。同时(shi)，通过内部的电(dian)(dian)(dian)(dian)路保(bao)护(hu)功(gong)能，监(jian)测(ce)电(dian)(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)(dian)压(ya)、温度、充(chong)(chong)电(dian)(dian)(dian)(dian)状态等参数，保(bao)证(zheng)充(chong)(chong)电(dian)(dian)(dian)(dian)的安...
KNB2706A场(chang)效(xiao)应管漏源击(ji)穿(chuan)电(dian)压60V，漏极(ji)电(dian)流(liu)150A，极(ji)低(di)导(dao)通电(dian)阻RDS(开(kai)启) 2.8m...KNB2706A场(chang)效(xiao)应管漏源击(ji)穿(chuan)电(dian)压60V，漏极(ji)电(dian)流(liu)150A，极(ji)低(di)导(dao)通电(dian)阻RDS(开(kai)启) 2.8mΩ，最(zui)大限度地减(jian)少导(dao)电(dian)损耗(hao)，提高效(xiao)率(lv)；快速(su)开(kai)关切换，高效(xiao)低(di)耗(hao)；高坚固性、100%经...
MOS管：电(dian)压(ya)(ya)/电(dian)流承(cheng)(cheng)载(zai)(zai)能(neng)(neng)力(li)弱，但(dan)耗(hao)能(neng)(neng)低(di)，开(kai)关速度快(kuai)，寿(shou)命长，12V/48V低(di)压(ya)(ya)辅助(zhu)...MOS管：电(dian)压(ya)(ya)/电(dian)流承(cheng)(cheng)载(zai)(zai)能(neng)(neng)力(li)弱，但(dan)耗(hao)能(neng)(neng)低(di)，开(kai)关速度快(kuai)，寿(shou)命长，12V/48V低(di)压(ya)(ya)辅助(zhu)电(dian)池(chi)的 BMS。 继电(dian)器：开(kai)关速度慢，寿(shou)命短，但(dan)电(dian)压(ya)(ya)/电(dian)流承(cheng)(cheng)载(zai)(zai)能(neng)(neng)力(li)强，适用(yong)于(yu)400V/80...
正向(xiang)充电：当控(kong)制(zhi)(zhi)输出为(wei)高(gao)电平时(shi)，Q1的栅(zha)(zha)源电压(ya)(ya)(ya)(ya)Vgs大于阈值电压(ya)(ya)(ya)(ya)Vth，Q1导(dao)通。此(ci)...正向(xiang)充电：当控(kong)制(zhi)(zhi)输出为(wei)高(gao)电平时(shi)，Q1的栅(zha)(zha)源电压(ya)(ya)(ya)(ya)Vgs大于阈值电压(ya)(ya)(ya)(ya)Vth，Q1导(dao)通。此(ci)时(shi)，A点电位降低，B点电压(ya)(ya)(ya)(ya)为(wei)VIN减(jian)去(qu)二极管导(dao)通电压(ya)(ya)(ya)(ya)，Q2的栅(zha)(zha)源电压(ya)(ya)(ya)(ya)Vgs小于阈值电压(ya)(ya)(ya)(ya)V...
