不含(han)杂质的半(ban)导体(ti)(ti)称(cheng)为(wei)(wei)本征半(ban)导体(ti)(ti)。半(ban)导体(ti)(ti)硅和(he)锗(zhe)的最外层电子(zi)有四个,故而(er)称(cheng)它为(wei)(wei)...不含(han)杂质的半(ban)导体(ti)(ti)称(cheng)为(wei)(wei)本征半(ban)导体(ti)(ti)。半(ban)导体(ti)(ti)硅和(he)锗(zhe)的最外层电子(zi)有四个,故而(er)称(cheng)它为(wei)(wei)四价元素,每一个外层电子(zi)称(cheng)为(wei)(wei)价电子(zi)。为(wei)(wei)了(le)处于(yu)稳(wen)定状态,单晶(jing)(jing)硅和(he)单晶(jing)(jing)锗(zhe)中(zhong)的每个原...
电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)(一(yi)类电(dian)(dian)(dian)(dian)(dian)子(zi)元器(qi)(qi)件(jian))一(yi)般指电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)器(qi)(qi) 电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)器(qi)(qi)(Inductor)是能(neng)够(gou)把电(dian)(dian)(dian)(dian)(dian)能(neng)转(zhuan)化为磁...电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)(一(yi)类电(dian)(dian)(dian)(dian)(dian)子(zi)元器(qi)(qi)件(jian))一(yi)般指电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)器(qi)(qi) 电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)器(qi)(qi)(Inductor)是能(neng)够(gou)把电(dian)(dian)(dian)(dian)(dian)能(neng)转(zhuan)化为磁能(neng)而存储(chu)起来的(de)(de)元件(jian)。电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)器(qi)(qi)的(de)(de)结(jie)构类似(si)于变压器(qi)(qi),但只(zhi)有一(yi)个绕组(zu)。电(dian)(dian)(dian)(dian)(dian)感(gan)(gan)(gan)器(qi)(qi)具有一(yi)定(ding)的(de)(de)...
输(shu)入(ru)部(bu)分(fen)有(you)(you)3个(ge)信(xin)号,12V直(zhi)流输(shu)入(ru)VIN、工作(zuo)使(shi)能电压(ya)(ya)ENB及Panel电流控(kong)制信(xin)号DIM。...输(shu)入(ru)部(bu)分(fen)有(you)(you)3个(ge)信(xin)号,12V直(zhi)流输(shu)入(ru)VIN、工作(zuo)使(shi)能电压(ya)(ya)ENB及Panel电流控(kong)制信(xin)号DIM。VIN由Adapter提供,ENB电压(ya)(ya)由主板上的MCU提供,其值为0或3V,当ENB=0时,Inverter不...
栅(zha)(zha)(zha)极(ji)(ji)(ji)电阻的(de)(de)功(gong)率由IGBT栅(zha)(zha)(zha)极(ji)(ji)(ji)驱(qu)动(dong)的(de)(de)功(gong)率决定,一(yi)般(ban)来说栅(zha)(zha)(zha)极(ji)(ji)(ji)电阻的(de)(de)总功(gong)率应至少是栅(zha)(zha)(zha)...栅(zha)(zha)(zha)极(ji)(ji)(ji)电阻的(de)(de)功(gong)率由IGBT栅(zha)(zha)(zha)极(ji)(ji)(ji)驱(qu)动(dong)的(de)(de)功(gong)率决定,一(yi)般(ban)来说栅(zha)(zha)(zha)极(ji)(ji)(ji)电阻的(de)(de)总功(gong)率应至少是栅(zha)(zha)(zha)极(ji)(ji)(ji)驱(qu)动(dong)功(gong)率的(de)(de)2倍(bei)。IGBT栅(zha)(zha)(zha)极(ji)(ji)(ji)驱(qu)动(dong)功(gong)率 P=FUQ,其(qi)中:F 为工作频率;U 为驱(qu)动(dong)输出(chu)电压...
电(dian)压(ya)比(bi)(bi)(bi)较器是(shi)对(dui)(dui)输入(ru)信号(hao)(hao)进行(xing)(xing)鉴幅与比(bi)(bi)(bi)较的电(dian)路,其功能(neng)是(shi)比(bi)(bi)(bi)较一(yi)(yi)个模拟信号(hao)(hao)和另一(yi)(yi)...电(dian)压(ya)比(bi)(bi)(bi)较器是(shi)对(dui)(dui)输入(ru)信号(hao)(hao)进行(xing)(xing)鉴幅与比(bi)(bi)(bi)较的电(dian)路,其功能(neng)是(shi)比(bi)(bi)(bi)较一(yi)(yi)个模拟信号(hao)(hao)和另一(yi)(yi)个模拟信号(hao)(hao)(参考(kao)信号(hao)(hao)),并以输出比(bi)(bi)(bi)较得到(dao)的二进制信号(hao)(hao)。其在A/D转换器、数据传输器...