KCX040N10N场(chang)效应管漏(lou)源(yuan)击穿(chuan)电(dian)压100V，漏(lou)极(ji)电(dian)流(liu)120A ，采用先(xian)进的MOS技术制造，...KCX040N10N场(chang)效应管漏(lou)源(yuan)击穿(chuan)电(dian)压100V，漏(lou)极(ji)电(dian)流(liu)120A ，采用先(xian)进的MOS技术制造，极(ji)低(di)导通电(dian)阻RDS(开(kai)启) 3.6mΩ，卓(zhuo)越的QgxRDS（on）产品（FOM），减少开(kai)关损耗，提...
充(chong)气(qi)泵(beng)中的MOS管主(zhu)要用于(yu)控(kong)(kong)制(zhi)(zhi)电(dian)(dian)(dian)(dian)机供电(dian)(dian)(dian)(dian)和气(qi)压调节，实现(xian)精准充(chong)气(qi)和智能控(kong)(kong)制(zhi)(zhi)。 ...充(chong)气(qi)泵(beng)中的MOS管主(zhu)要用于(yu)控(kong)(kong)制(zhi)(zhi)电(dian)(dian)(dian)(dian)机供电(dian)(dian)(dian)(dian)和气(qi)压调节，实现(xian)精准充(chong)气(qi)和智能控(kong)(kong)制(zhi)(zhi)。 电(dian)(dian)(dian)(dian)机控(kong)(kong)制(zhi)(zhi)充(chong)气(qi)泵(beng)通常配备电(dian)(dian)(dian)(dian)机驱动气(qi)泵(beng)，通过MOS管调节电(dian)(dian)(dian)(dian)流通断以控(kong)(kong)制(zhi)(zhi)电(dian)(dian)(dian)(dian)机运转。
分(fen)(fen)压原理(li)涉及(ji)串联(lian)电(dian)(dian)(dian)(dian)路中电(dian)(dian)(dian)(dian)阻上的(de)电(dian)(dian)(dian)(dian)压分(fen)(fen)配，其(qi)中流(liu)(liu)经每个(ge)电(dian)(dian)(dian)(dian)阻的(de)电(dian)(dian)(dian)(dian)流(liu)(liu)相同(tong)，各(ge)电(dian)(dian)(dian)(dian)阻...分(fen)(fen)压原理(li)涉及(ji)串联(lian)电(dian)(dian)(dian)(dian)路中电(dian)(dian)(dian)(dian)阻上的(de)电(dian)(dian)(dian)(dian)压分(fen)(fen)配，其(qi)中流(liu)(liu)经每个(ge)电(dian)(dian)(dian)(dian)阻的(de)电(dian)(dian)(dian)(dian)流(liu)(liu)相同(tong)，各(ge)电(dian)(dian)(dian)(dian)阻两端的(de)电(dian)(dian)(dian)(dian)压累加(jia)得到总电(dian)(dian)(dian)(dian)压。分(fen)(fen)压原理(li)的(de)公式为R1：R2=U1：U2。在并(bing)联(lian)电(dian)(dian)(dian)(dian)路中分(fen)(fen)流(liu)(liu)。
KCX032N10N场效(xiao)(xiao)应(ying)管(guan)漏(lou)源(yuan)击穿(chuan)电(dian)压(ya)100V，漏(lou)极(ji)电(dian)流120A ，采用先进的(de)MOS技术制造，...KCX032N10N场效(xiao)(xiao)应(ying)管(guan)漏(lou)源(yuan)击穿(chuan)电(dian)压(ya)100V，漏(lou)极(ji)电(dian)流120A ，采用先进的(de)MOS技术制造，极(ji)低导(dao)通电(dian)阻RDS(开启) 3.5mΩ，卓(zhuo)越的(de)QgxRDS（on）产品（FOM），减少开关损耗，提...
在(zai)每(mei)个(ge)(ge)(ge)开(kai)关(guan)管的(de)并联(lian)(lian)位(wei)置(zhi)添(tian)加(jia)反并联(lian)(lian)二极管。这(zhei)样做可(ke)(ke)以(yi)在(zai)开(kai)关(guan)管关(guan)断(duan)时提供一个(ge)(ge)(ge)回(hui)...在(zai)每(mei)个(ge)(ge)(ge)开(kai)关(guan)管的(de)并联(lian)(lian)位(wei)置(zhi)添(tian)加(jia)反并联(lian)(lian)二极管。这(zhei)样做可(ke)(ke)以(yi)在(zai)开(kai)关(guan)管关(guan)断(duan)时提供一个(ge)(ge)(ge)回(hui)路(lu)，使电(dian)感中的(de)能量得(de)以(yi)释放，从而降低尖峰电(dian)压的(de)幅值。
