ac(交流(liu)电(dian)(dian)）：电(dian)(dian)流(liu)方(fang)(fang)向和大(da)小随时(shi)间按正弦(xian)规律周期性变化。例(li)如家庭(ting)用电(dian)(dian)（中国(guo)(guo)...ac(交流(liu)电(dian)(dian)）：电(dian)(dian)流(liu)方(fang)(fang)向和大(da)小随时(shi)间按正弦(xian)规律周期性变化。例(li)如家庭(ting)用电(dian)(dian)（中国(guo)(guo)为220V/50Hz），电(dian)(dian)流(liu)方(fang)(fang)向每秒(miao)改变100次。
KCX017N10N场(chang)效应管(guan)漏(lou)源击穿(chuan)电(dian)压100V，漏(lou)极(ji)(ji)电(dian)流(liu)259A ，采用先(xian)进(jin)的MOS技术制(zhi)造(zao)，...KCX017N10N场(chang)效应管(guan)漏(lou)源击穿(chuan)电(dian)压100V，漏(lou)极(ji)(ji)电(dian)流(liu)259A ，采用先(xian)进(jin)的MOS技术制(zhi)造(zao)，极(ji)(ji)低导通电(dian)阻RDS(开启) 2mΩ，卓越的QgxRDS（on）产品(pin)（FOM），减少(shao)开关损耗(hao)，提高...
nmos管(guan)作(zuo)为(wei)防(fang)止(zhi)电(dian)(dian)(dian)(dian)路反(fan)接(jie)(jie)方案中，VCC=5V的(de)电(dian)(dian)(dian)(dian)源加在(zai)10K阻性负载上，电(dian)(dian)(dian)(dian)压表、电(dian)(dian)(dian)(dian)流...nmos管(guan)作(zuo)为(wei)防(fang)止(zhi)电(dian)(dian)(dian)(dian)路反(fan)接(jie)(jie)方案中，VCC=5V的(de)电(dian)(dian)(dian)(dian)源加在(zai)10K阻性负载上，电(dian)(dian)(dian)(dian)压表、电(dian)(dian)(dian)(dian)流表分别测量，记(ji)录值是5V、500uA；切换(huan)Key开关，模拟电(dian)(dian)(dian)(dian)源反(fan)接(jie)(jie)时，测得(de)记(ji)录值是-49.55...
交(jiao)(jiao)流充电(dian)(dian)(dian)桩输出的依(yi)然是交(jiao)(jiao)流电(dian)(dian)(dian)，这(zhei)种电(dian)(dian)(dian)流需要(yao)经过(guo)车载充电(dian)(dian)(dian)机(ji)(ji)(OBC)转(zhuan)换为(wei)直流电(dian)(dian)(dian)...交(jiao)(jiao)流充电(dian)(dian)(dian)桩输出的依(yi)然是交(jiao)(jiao)流电(dian)(dian)(dian)，这(zhei)种电(dian)(dian)(dian)流需要(yao)经过(guo)车载充电(dian)(dian)(dian)机(ji)(ji)(OBC)转(zhuan)换为(wei)直流电(dian)(dian)(dian)后才能为(wei)电(dian)(dian)(dian)池充电(dian)(dian)(dian)。这(zhei)一转(zhuan)换过(guo)程限制了充电(dian)(dian)(dian)速度，因为(wei)车载充电(dian)(dian)(dian)机(ji)(ji)的功率(lv)通常有限(3.3...
KCX012N10N场(chang)效应管漏源击穿(chuan)电(dian)(dian)压(ya)100V，漏极(ji)(ji)电(dian)(dian)流330A ，采用先进的(de)MOS技术制(zhi)造，...KCX012N10N场(chang)效应管漏源击穿(chuan)电(dian)(dian)压(ya)100V，漏极(ji)(ji)电(dian)(dian)流330A ，采用先进的(de)MOS技术制(zhi)造，极(ji)(ji)低导通电(dian)(dian)阻(zu)RDS(开启(qi)) 1.4mΩ，卓越的(de)QgxRDS（on）产品（FOM），减少开关损耗，高(gao)...
