分(fen)压(ya)(ya)(ya)(ya)原(yuan)(yuan)(yuan)理涉及串联(lian)电(dian)(dian)(dian)(dian)(dian)路中电(dian)(dian)(dian)(dian)(dian)阻(zu)上的(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)(ya)分(fen)配，其中流(liu)经每个电(dian)(dian)(dian)(dian)(dian)阻(zu)的(de)电(dian)(dian)(dian)(dian)(dian)流(liu)相(xiang)同，各电(dian)(dian)(dian)(dian)(dian)阻(zu)...分(fen)压(ya)(ya)(ya)(ya)原(yuan)(yuan)(yuan)理涉及串联(lian)电(dian)(dian)(dian)(dian)(dian)路中电(dian)(dian)(dian)(dian)(dian)阻(zu)上的(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)(ya)分(fen)配，其中流(liu)经每个电(dian)(dian)(dian)(dian)(dian)阻(zu)的(de)电(dian)(dian)(dian)(dian)(dian)流(liu)相(xiang)同，各电(dian)(dian)(dian)(dian)(dian)阻(zu)两端的(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)(ya)累(lei)加得到总(zong)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)(ya)。分(fen)压(ya)(ya)(ya)(ya)原(yuan)(yuan)(yuan)理的(de)公式(shi)为R1：R2=U1：U2。在(zai)并联(lian)电(dian)(dian)(dian)(dian)(dian)路中分(fen)流(liu)。
KCX032N10N场效应(ying)管(guan)漏(lou)(lou)源(yuan)击穿(chuan)电(dian)压100V，漏(lou)(lou)极(ji)电(dian)流120A ，采用(yong)(yong)先(xian)进的(de)MOS技(ji)(ji)术制造，...KCX032N10N场效应(ying)管(guan)漏(lou)(lou)源(yuan)击穿(chuan)电(dian)压100V，漏(lou)(lou)极(ji)电(dian)流120A ，采用(yong)(yong)先(xian)进的(de)MOS技(ji)(ji)术制造，极(ji)低(di)导通电(dian)阻RDS(开(kai)启) 3.5mΩ，卓(zhuo)越的(de)QgxRDS（on）产品（FOM），减少开(kai)关(guan)损耗，提...
在(zai)每个开(kai)(kai)关管(guan)的(de)(de)(de)并(bing)联(lian)位置添加(jia)反并(bing)联(lian)二极管(guan)。这样做(zuo)(zuo)可(ke)以(yi)在(zai)开(kai)(kai)关管(guan)关断(duan)时提供一个回...在(zai)每个开(kai)(kai)关管(guan)的(de)(de)(de)并(bing)联(lian)位置添加(jia)反并(bing)联(lian)二极管(guan)。这样做(zuo)(zuo)可(ke)以(yi)在(zai)开(kai)(kai)关管(guan)关断(duan)时提供一个回路(lu)，使(shi)电(dian)感(gan)中的(de)(de)(de)能量得(de)以(yi)释放，从而降低尖(jian)峰电(dian)压的(de)(de)(de)幅值。
ac(交(jiao)流(liu)电(dian)）：电(dian)流(liu)方向和大(da)小随(sui)时间(jian)按正(zheng)(zheng)弦(xian)规(gui)律(lv)周期性变(bian)化(hua)(hua)。例如家庭用电(dian)（中(zhong)国...ac(交(jiao)流(liu)电(dian)）：电(dian)流(liu)方向和大(da)小随(sui)时间(jian)按正(zheng)(zheng)弦(xian)规(gui)律(lv)周期性变(bian)化(hua)(hua)。例如家庭用电(dian)（中(zhong)国为(wei)220V/50Hz），电(dian)流(liu)方向每(mei)秒改(gai)变(bian)100次。
KCX017N10N场(chang)效(xiao)应管漏源(yuan)击(ji)穿(chuan)电(dian)压(ya)100V，漏极(ji)电(dian)流259A ，采用(yong)先进的(de)MOS技术(shu)制(zhi)造(zao)，...KCX017N10N场(chang)效(xiao)应管漏源(yuan)击(ji)穿(chuan)电(dian)压(ya)100V，漏极(ji)电(dian)流259A ，采用(yong)先进的(de)MOS技术(shu)制(zhi)造(zao)，极(ji)低导通电(dian)阻RDS(开启) 2mΩ，卓(zhuo)越(yue)的(de)QgxRDS（on）产品（FOM），减(jian)少(shao)开关(guan)损(sun)耗(hao)，提高(gao)...
