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60V MOS管选型表
60V MOS管-锂电池保护板选型表

以下为60V MOS管选型表及(ji)参数参考(kao)资(zi)料，主要应用(yong)领域为锂(li)电池保护板，价格合理(li)，货(huo)源稳(wen)定，品质保证！

锂电池保护板的主要作用

一(yi)般要求(qiu)在-25℃～85℃时Control(IC)检测控制电(dian)(dian)(dian)(dian)(dian)芯(xin)电(dian)(dian)(dian)(dian)(dian)压与充放电(dian)(dian)(dian)(dian)(dian)回(hui)路(lu)的(de)(de)工作电(dian)(dian)(dian)(dian)(dian)流、电(dian)(dian)(dian)(dian)(dian)压，在一(yi)切正常情况下C-MOS开关管导通，使(shi)(shi)电(dian)(dian)(dian)(dian)(dian)芯(xin)与保护电(dian)(dian)(dian)(dian)(dian)路(lu)板处于正常工作状态，而当电(dian)(dian)(dian)(dian)(dian)芯(xin)电(dian)(dian)(dian)(dian)(dian)压或回(hui)路(lu)中的(de)(de)工作电(dian)(dian)(dian)(dian)(dian)流超过(guo)控制IC中比较电(dian)(dian)(dian)(dian)(dian)路(lu)预设值时，在15～30ms内（不同(tong)控制IC与C-MOS有不同(tong)的(de)(de)响应时间），将(jiang)CMOS关断(duan)，即关闭电(dian)(dian)(dian)(dian)(dian)芯(xin)放电(dian)(dian)(dian)(dian)(dian)或充电(dian)(dian)(dian)(dian)(dian)回(hui)路(lu)，以保证使(shi)(shi)用者与电(dian)(dian)(dian)(dian)(dian)芯(xin)的(de)(de)安全(quan)。

1、过充电保护

锂离(li)子电(dian)(dian)池要求(qiu)的充电(dian)(dian)方(fang)式为恒(heng)流(liu)/恒(heng)压(ya)(ya)，在(zai)充电(dian)(dian)初期，为恒(heng)流(liu)充电(dian)(dian)，随着充电(dian)(dian)过程，电(dian)(dian)压(ya)(ya)会上升到(dao)4.2V(根(gen)据(ju)正极材料不同，有的电(dian)(dian)池要求(qiu)恒(heng)压(ya)(ya)值为4.1V)，转为恒(heng)压(ya)(ya)充电(dian)(dian)，直至电(dian)(dian)流(liu)越(yue)来越(yue)小。

2、短路保护

锂电(dian)池保(bao)护板在对(dui)负(fu)载(zai)放电(dian)过程中，若回路(lu)(lu)电(dian)流大到(dao)使U>0.9V（该(gai)值(zhi)由控(kong)制IC决定，不(bu)(bu)同(tong)的IC有不(bu)(bu)同(tong)的值(zhi)）时(shi)，控(kong)制IC则(ze)判(pan)断(duan)(duan)(duan)为负(fu)载(zai)短路(lu)(lu)，其(qi) “DO”脚将(jiang)迅速(su)由高电(dian)压转变为零(ling)电(dian)压，使T2由导通转为关(guan)断(duan)(duan)(duan)，从而切断(duan)(duan)(duan)放电(dian)回路(lu)(lu)，起到(dao)短路(lu)(lu)保(bao)护作用。短路(lu)(lu)保(bao)护的延时(shi)时(shi)间极短，通常(chang)小于7微(wei)秒。其(qi)工作原 理(li)与过电(dian)流保(bao)护类似，只是判(pan)断(duan)(duan)(duan)方法不(bu)(bu)同(tong)，保(bao)护延时(shi)时(shi)间也(ye)不(bu)(bu)一样。

3、过电流保护

由于锂离(li)子电(dian)池(chi)(chi)(chi)(chi)的化(hua)学特(te)性，电(dian)池(chi)(chi)(chi)(chi)生产厂家(jia)规定了其(qi)放(fang)电(dian)电(dian)流最大不能超过(guo)2C（C=电(dian)池(chi)(chi)(chi)(chi)容(rong)量/小时），当电(dian)池(chi)(chi)(chi)(chi)超过(guo)2C电(dian)流放(fang)电(dian)时，将会导(dao)致(zhi)电(dian)池(chi)(chi)(chi)(chi)的永久性损坏或出现安全问(wen)题(ti)。

锂电(dian)(dian)池保护板在对负载(zai)正常(chang)放(fang)电(dian)(dian)过程中，放(fang)电(dian)(dian)电(dian)(dian)流在经过串(chuan)联的2个MOSFET时，由(you)于MOSFET的导通阻抗，会在其两端产(chan)生(sheng)一个电(dian)(dian)压(ya)(ya)，该(gai)电(dian)(dian)压(ya)(ya)值 U=I*RDS*2, RDS为单个MOSFET导通阻抗，控制IC上的“V-”脚对该(gai)电(dian)(dian)压(ya)(ya)值进行检测，若负载(zai)因(yin)某种原因(yin)导致异(yi)常(chang)，使(shi)回(hui)路电(dian)(dian)流增大，当回(hui)路电(dian)(dian)流大到(dao)(dao)使(shi) U>0.1V（该(gai)值由(you)控制IC决定，不(bu)同(tong)的IC有不(bu)同(tong)的值）时，其“DO”脚将(jiang)由(you)高电(dian)(dian)压(ya)(ya)转变(bian)为零电(dian)(dian)压(ya)(ya)，使(shi)T2由(you)导通转为关断，从而(er)切断了(le)放(fang)电(dian)(dian)回(hui)路， 使(shi)回(hui)路中电(dian)(dian)流为零，起到(dao)(dao)过电(dian)(dian)流保护作用(yong)。

在控制IC检测到过(guo)电(dian)流(liu)发生至发出关断(duan)T2信号之(zhi)间，也(ye)有一段延时(shi)时(shi)间，该延时(shi)时(shi)间的(de)长短由C2决定，通常为13毫秒(miao)左右，以避免因干扰(rao)而造成(cheng)误判断(duan)。

在上述控制(zhi)过(guo)(guo)(guo)程中可知，其过(guo)(guo)(guo)电流(liu)检测值(zhi)大小不仅(jin)取决于(yu)控制(zhi)IC的控制(zhi)值(zhi)，还(hai)取决于(yu)MOSFET的导通阻抗，当MOSFET导通阻抗越大时，对同样的控制(zhi)IC，其过(guo)(guo)(guo)电流(liu)保护值(zhi)越小。

4、过放电保护

电(dian)(dian)(dian)池(chi)在对外部负载(zai)(zai)放(fang)电(dian)(dian)(dian)过(guo)程中(zhong)，其(qi)电(dian)(dian)(dian)压(ya)(ya)会随着放(fang)电(dian)(dian)(dian)过(guo)程逐渐降低(di)，当锂电(dian)(dian)(dian)池(chi)保护板(ban)电(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)压(ya)(ya)降至2.5V时(shi)，其(qi)容量已被完全(quan)放(fang)光，此时(shi)如果让电(dian)(dian)(dian)池(chi)继(ji)续对负载(zai)(zai)放(fang)电(dian)(dian)(dian)，将造成电(dian)(dian)(dian)池(chi)的永久性损坏。

在电(dian)(dian)(dian)池(chi)(chi)放电(dian)(dian)(dian)过程(cheng)中，当控制IC检测(ce)到电(dian)(dian)(dian)池(chi)(chi)电(dian)(dian)(dian)压低于2.3V（该(gai)值由控制IC决定，不同的(de)IC有不同的(de)值）时(shi)，其“DO”脚将由高电(dian)(dian)(dian)压转(zhuan)变为(wei)零电(dian)(dian)(dian)压， 使T2由导通转(zhuan)为(wei)关断(duan)(duan)，从(cong)而(er)切(qie)断(duan)(duan)了放电(dian)(dian)(dian)回路，使锂电(dian)(dian)(dian)池(chi)(chi)保护板(ban)电(dian)(dian)(dian)池(chi)(chi)无法再对(dui)负载进行(xing)放电(dian)(dian)(dian)，起到过放电(dian)(dian)(dian)保护作用。而(er)此时(shi)由于T2自带的(de)体二极(ji)管VD2的(de)存在，充电(dian)(dian)(dian)器(qi)可以通 过该(gai)二极(ji)管对(dui)电(dian)(dian)(dian)池(chi)(chi)进行(xing)充电(dian)(dian)(dian)。

由于在(zai)过放(fang)电(dian)保护状态下电(dian)池电(dian)压不(bu)能再(zai)降(jiang)低(di)，因(yin)此(ci)要求(qiu)锂电(dian)池保护板的消耗电(dian)流(liu)极小，此(ci)时(shi)控(kong)制IC会进入低(di)功耗状态，整个保护电(dian)路(lu)耗电(dian)会小于0.1μA。 在(zai)控(kong)制IC检测到电(dian)池电(dian)压低(di)于2.3V至发(fa)出关断T2信号之间，也有(you)一段延(yan)(yan)时(shi)时(shi)间，该延(yan)(yan)时(shi)时(shi)间的长(zhang)短(duan)由C2决定，通常设为(wei)100毫(hao)秒左(zuo)右，以避免因(yin)干扰而 造(zao)成误判断。

5、正常状态

在正常状(zhuang)态下电(dian)(dian)(dian)路中N1的“CO”与“DO”脚都(dou)输(shu)出高电(dian)(dian)(dian)压，两个MOSFET都(dou)处(chu)于导通(tong)状(zhuang)态，电(dian)(dian)(dian)池可以自由(you)地进行充(chong)电(dian)(dian)(dian)和放电(dian)(dian)(dian)，由(you)于MOSFET的导通(tong)阻(zu)抗很小(xiao)(xiao)，通(tong)常小(xiao)(xiao)于30毫欧，因(yin)此其导通(tong)电(dian)(dian)(dian)阻(zu)对(dui)电(dian)(dian)(dian)路的性(xing)能影响很小(xiao)(xiao)。

此状态下保护(hu)电(dian)路的(de)消耗电(dian)流为μA级，通常小于(yu)7μA。

锂电池保护板-保护板的构成

锂(li)(li)电(dian)(dian)(dian)(dian)(dian)池(chi)锂(li)(li)电(dian)(dian)(dian)(dian)(dian)池(chi)保(bao)护板（可(ke)充(chong)型(xing)）之所以需要保(bao)护，是由(you)它本身特性决定的(de)(de)。由(you)于锂(li)(li)电(dian)(dian)(dian)(dian)(dian)池(chi)保(bao)护板本身的(de)(de)材料决定了(le)它不能(neng)被过充(chong)、过放、过流(liu)、短路(lu)及(ji)超高(gao)(gao)温充(chong)放电(dian)(dian)(dian)(dian)(dian)，因此锂(li)(li)电(dian)(dian)(dian)(dian)(dian)池(chi)锂(li)(li)电(dian)(dian)(dian)(dian)(dian)池(chi)保(bao)护板锂(li)(li)电(dian)(dian)(dian)(dian)(dian)组件总会(hui)跟(gen)着一(yi)块精致(zhi)的(de)(de)保(bao)护板和(he)一(yi)片电(dian)(dian)(dian)(dian)(dian)流(liu)保(bao)险器出现。锂(li)(li)电(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)保(bao)护功能(neng)通常由(you)保(bao)护电(dian)(dian)(dian)(dian)(dian)路(lu)板和(he)PTC协同完成，保(bao)护板是由(you)电(dian)(dian)(dian)(dian)(dian)子电(dian)(dian)(dian)(dian)(dian)路(lu)组成，在-40℃至+85℃的(de)(de)环(huan)境下时(shi)刻(ke)准确的(de)(de)监(jian)视电(dian)(dian)(dian)(dian)(dian)芯的(de)(de)电(dian)(dian)(dian)(dian)(dian)压(ya)和(he)充(chong)放回路(lu)的(de)(de)电(dian)(dian)(dian)(dian)(dian)流(liu)，即(ji)时(shi)控制电(dian)(dian)(dian)(dian)(dian)流(liu)回路(lu)的(de)(de)通断(duan)；PTC在高(gao)(gao)温环(huan)境下防止电(dian)(dian)(dian)(dian)(dian)池(chi)发生恶劣(lie)的(de)(de)损坏。

锂电(dian)(dian)池(chi)保(bao)(bao)护板通常(chang)包括控(kong)制(zhi)IC、MOS开关(guan)、电(dian)(dian)阻、电(dian)(dian)容及(ji)辅助器件NTC、ID存(cun)(cun)储器等(deng)。其中控(kong)制(zhi)IC，在一(yi)切正(zheng)常(chang)的情(qing)况下(xia)控(kong)制(zhi)MOS开关(guan)导通，使电(dian)(dian)芯(xin)与外电(dian)(dian)路(lu)沟(gou)通，而(er)当电(dian)(dian)芯(xin)电(dian)(dian)压或(huo)回路(lu)电(dian)(dian)流超过规定值时(shi)，它(ta)立刻（数十(shi)毫秒）控(kong)制(zhi)MOS开关(guan)关(guan)断，保(bao)(bao)护电(dian)(dian)芯(xin)的安全。NTC是Negative temperaturecoefficient的缩写，意即负温度(du)系数，在环境(jing)温度(du)升高时(shi)，其阻值降低，使用电(dian)(dian)设备或(huo)充(chong)电(dian)(dian)设备及(ji)时(shi)反应、控(kong)制(zhi)内部中断而(er)停止充(chong)放电(dian)(dian)。ID 存(cun)(cun)储器常(chang)为单线接口存(cun)(cun)储器，ID是Identification 的缩写即身份识别的意思，存(cun)(cun)储电(dian)(dian)池(chi)种类、生(sheng)产日期等(deng)信息。可起(qi)到产品的可追溯和应用的限制(zhi)。

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