利盈娱乐(中国)创新平台有限公司

功率半(ban)导体(ti)器件机能

MOS管，它(ta)采用(yong)(yong)“超级结(jie)”(Super-Junction)结(jie)构，故又称超结(jie)功(gong)率MOSFET。全数字控制(zhi)是(shi)发(fa)展趋势(shi)，已(yi)经在(zai)很多功(gong)率变(bian)换设备中得到(dao)应(ying)用(yong)(yong)。既管(guan)理了对(dui)电(dian)(dian)网的(de)谐(xie)波污染，又进步(bu)了电(dian)(dian)源的(de)整体效率。跟着脉(mai)宽调制(zhi)(PWM)技术的(de)发(fa)展，PWM开关(guan)电(dian)(dian)源问(wen)世，它(ta)的(de)特点是(shi)用(yong)(yong)20kHz的(de)载(zai)波进行脉(mai)冲宽度(du)调制(zhi)，电(dian)(dian)源的(de)效率可(ke)(ke)达65%"70%，而线性(xing)电(dian)(dian)源的(de)效率只(zhi)有30％"40％。高(gao)频化和软开关(guan)技术是(shi)过去20年(nian)国际电(dian)(dian)力电(dian)(dian)子界(jie)研(yan)究的(de)热(re)门之一(yi)。此外，还要求(qiu)开关(guan)电(dian)(dian)源效率要更高(gao)，机能更好，可(ke)(ke)靠性(xing)更高(gao)等。应(ying)用(yong)(yong)压电(dian)(dian)变(bian)压器(qi)可(ke)(ke)使高(gao)频功(gong)率变(bian)换器(qi)实(shi)现轻(qing)、小、薄和高(gao)功(gong)率密度(du)。

系统集(ji)成技术

电(dian)源设备的制造特(te)点长(zhang)短尺度件多、劳动(dong)强度大、设计周期(qi)长(zhang)、本钱(qian)高(gao)、可靠(kao)性低等，而用(yong)户要求制造厂出产的电(dian)源产品(pin)更加实用(yong)、可靠(kao)性更高(gao)、更轻小(xiao)、本钱(qian)更低。

第三个阶段从20世纪90年(nian)代中期开始(shi)，集成电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子系统(tong)和集成电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子模块(IPEM)技术开始(shi)发展，它是当今(jin)国际电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子界亟待解决的新题(ti)目之一。使(shi)开关电(dian)(dian)(dian)源(yuan)小型(xing)化的详细(xi)办法有以下几种。

开关电源的三个重要发展阶段(duan)开(kai)关电源经(jing)历了三个重要发展阶段(duan)。

第二(er)个(ge)阶(jie)段(duan)自(zi)20世纪80年代开(kai)始(shi)，高频化和软开(kai)关技(ji)术的(de)研究(jiu)开(kai)发，使功(gong)率变换器机能更(geng)好、重量更(geng)轻(qing)、尺寸(cun)更(geng)小。

全(quan)数字(zi)化(hua)控制

电(dian)源(yuan)的(de)(de)控(kong)制已(yi)经过(guo)模拟控(kong)制，模数(shu)混合控(kong)制，进入到全数(shu)字控(kong)制阶段。这一(yi)技术称为有(you)源(yuan)功(gong)率(lv)(lv)因数(shu)校正(APFC)，单(dan)相APFC海内(nei)外开发较早，技术已(yi)较成熟；三相APFC的(de)(de)拓扑类型(xing)和(he)控(kong)制策略固然已(yi)经有(you)良多种，但(dan)还有(you)待(dai)继承研究发展。为了实现电(dian)源(yuan)高(gao)功(gong)率(lv)(lv)密度，必(bi)需进步PWM变换(huan)器(qi)的(de)(de)工作频率(lv)(lv)、从而减小(xiao)电(dian)路(lu)中储(chu)能元件的(de)(de)体(ti)积(ji)重(zhong)量。

开(kai)关电源功(gong)率密(mi)度(du)

进步开关(guan)(guan)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)的(de)(de)功率密度，使之小型(xing)(xing)化、轻(qing)(qing)量(liang)化，是(shi)(shi)人们(men)不(bu)断(duan)追(zhui)求的(de)(de)目标。这对便携(xie)式(shi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)子设备(如移动(dong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)话，数字相机等(deng))尤为重要(yao)。这一切高(gao)新要(yao)求便促进了(le)开关(guan)(guan)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)的(de)(de)不(bu)断(duan)发(fa)(fa)展和提高(gao)。跟着超大(da)(da)规模集成(ultra-large-scale-integrated-ULSI)芯(xin)片尺(chi)寸的(de)(de)不(bu)断(duan)减小，电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)的(de)(de)尺(chi)寸与(yu)微处理(li)器比(bi)拟(ni)要(yao)大(da)(da)得多；而(er)航(hang)天、潜艇、军用开关(guan)(guan)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)以及(ji)用电(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)便携(xie)式(shi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)子设备(如手提计算机、移动(dong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)话等(deng))更(geng)需(xu)要(yao)小型(xing)(xing)化、轻(qing)(qing)量(liang)化的(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)。上(shang)述特(te)殊性(xing)(xing)，再加上(shang)EMI丈(zhang)量(liang)上(shang)的(de)(de)详(xiang)细(xi)难题(ti)，在电(dian)(dian)(dian)(dian)(dian)(dian)(dian)力电(dian)(dian)(dian)(dian)(dian)(dian)(dian)子的(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)磁(ci)兼(jian)容领域里，存在着很(hen)多交叉学科的(de)(de)前(qian)沿(yan)课题(ti)有(you)待人们(men)研究(jiu)。压(ya)(ya)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)变压(ya)(ya)器利用压(ya)(ya)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)陶瓷材料特(te)有(you)的(de)(de)“电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)-振(zhen)动(dong)”变换和“振(zhen)动(dong)-电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)”变换的(de)(de)性(xing)(xing)质传(chuan)送能量(liang)，其等(deng)效电(dian)(dian)(dian)(dian)(dian)(dian)(dian)路如统一个(ge)串并(bing)联谐振(zhen)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)路，是(shi)(shi)功率变换领域的(de)(de)研究(jiu)热门(men)之一。因此，对开关(guan)(guan)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)提出了(le)小型(xing)(xing)轻(qing)(qing)量(liang)要(yao)求，包括磁(ci)性(xing)(xing)元件和电(dian)(dian)(dian)(dian)(dian)(dian)(dian)容的(de)(de)体积重量(liang)也要(yao)小。因此，用工作频率为20kHz的(de)(de)PWM开关(guan)(guan)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)替换线(xian)性(xing)(xing)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)，可大(da)(da)幅度节约能源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)，从而(er)引起了(le)人们(men)的(de)(de)广泛关(guan)(guan)注，在电(dian)(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)(yuan)技术(shu)发(fa)(fa)展史上(shang)被(bei)誉为20kHz革命。

三是采用新型电(dian)容(rong)器。

二是应用压(ya)电(dian)变(bian)压(ya)器(qi)。工作(zuo)电(dian)压(ya)600"800V，通态(tai)电(dian)阻几乎(hu)降低了一个(ge)数目级(ji)(ji)，仍保持开(kai)(kai)关(guan)速度(du)快的(de)特点，是一种有(you)发展前途(tu)的(de)高频(pin)功率(lv)半导体(ti)器(qi)件。假(jia)如对输(shu)(shu)入端(duan)功率(lv)因(yin)数要求(qiu)不特别高时，将PFC变(bian)换器(qi)和后级(ji)(ji)DC／DC变(bian)换器(qi)组合成(cheng)一个(ge)拓扑，构成(cheng)单(dan)(dan)级(ji)(ji)高功率(lv)因(yin)数AC／DC开(kai)(kai)关(guan)电(dian)源，只用一个(ge)主开(kai)(kai)关(guan)管(guan)，可使(shi)功率(lv)因(yin)数校正到0.8以上，并使(shi)输(shu)(shu)出直流电(dian)压(ya)可调(diao)，这种拓扑结(jie)构称为单(dan)(dan)管(guan)单(dan)(dan)级(ji)(ji)PFC变(bian)换器(qi)。合用于兆赫级(ji)(ji)频(pin)率(lv)的(de)磁性(xing)材料为人们所关(guan)注，纳米(mi)结(jie)晶软(ruan)磁材料也已开(kai)(kai)发应用。

功(gong)率(lv)(lv)因(yin)数校正(zheng)(PFC)变(bian)(bian)换器因(yin)为AC／DC变(bian)(bian)换电(dian)(dian)(dian)(dian)路(lu)的(de)输(shu)入端有(you)整流器件和滤波电(dian)(dian)(dian)(dian)容，在正(zheng)弦电(dian)(dian)(dian)(dian)压(ya)输(shu)入时，单相整流电(dian)(dian)(dian)(dian)源供电(dian)(dian)(dian)(dian)的(de)电(dian)(dian)(dian)(dian)子设备，电(dian)(dian)(dian)(dian)网侧(交流输(shu)入端)功(gong)率(lv)(lv)因(yin)数仅为0.6-0.65。同(tong)时，电(dian)(dian)(dian)(dian)力电(dian)(dian)(dian)(dian)子电(dian)(dian)(dian)(dian)路(lu)(如开关变(bian)(bian)换器)内部的(de)控(kong)制电(dian)(dian)(dian)(dian)路(lu)也必需能(neng)承(cheng)受开关动作产生的(de)EMI及应用现场电(dian)(dian)(dian)(dian)磁噪声的(de)干扰(rao)。

上世纪90年代，跟着(zhe)大规模(mo)分布(bu)电(dian)(dian)源系统(tong)的发展，一体(ti)化(hua)的设计(ji)观念被推广到(dao)更(geng)大容(rong)量、更(geng)高(gao)电(dian)(dian)压的电(dian)(dian)源系统(tong)集(ji)成，进步了集(ji)成度，泛起了集(ji)成电(dian)(dian)力电(dian)(dian)子模(mo)块(IPEM)。在此基(ji)础上，可(ke)以实(shi)现一体(ti)化(hua)，所有元器件连同控(kong)制保护集(ji)成在一个模(mo)块中。长处(chu)是(shi)可(ke)快速高(gao)效为用(yong)户提供产品，明(ming)显降低本钱，进步可(ke)靠性(xing)。

一是高频化。开关稳压电(dian)(dian)(dian)源(以下简称开关电(dian)(dian)(dian)源)问世后(hou)，在良多领域逐步取代(dai)了线性稳压电(dian)(dian)(dian)源和晶闸(zha)管(guan)相控电(dian)(dian)(dian)源。

全(quan)数(shu)字(zi)控制(zhi)(zhi)(zhi)的长处是数(shu)字(zi)信(xin)号与混合(he)模(mo)数(shu)信(xin)号比拟可(ke)以(yi)(yi)标定(ding)更小的量(liang)，芯片价格也(ye)(ye)更低廉；对电(dian)(dian)(dian)(dian)流检测(ce)误(wu)差(cha)可(ke)以(yi)(yi)进行精确(que)的数(shu)字(zi)校正，电(dian)(dian)(dian)(dian)压检测(ce)也(ye)(ye)更精确(que)；可(ke)以(yi)(yi)实(shi)现快速(su)，灵(ling)活的控制(zhi)(zhi)(zhi)设计。这(zhei)些情况使电(dian)(dian)(dian)(dian)源制(zhi)(zhi)(zhi)造厂家承受巨大压力，迫(po)切需要开展集成电(dian)(dian)(dian)(dian)源模(mo)块的研究开发(fa)，使电(dian)(dian)(dian)(dian)源产(chan)品的尺(chi)度化(hua)、模(mo)块化(hua)、可(ke)制(zhi)(zhi)(zhi)造性、规(gui)模(mo)出产(chan)、降低本钱等目(mu)标得以(yi)(yi)实(shi)现。

可以预见，碳化硅二极管将是21世纪最可能成功应用的(de)新型功率半导体器件材料。

高频(pin)磁性元件

电(dian)源系统(tong)中(zhong)应用大量磁(ci)元件，高频磁(ci)元件的材料、结构和机能都不同(tong)于(yu)工频磁(ci)元件，有很多题目(mu)需要研(yan)究。

近(jin)两年(nian)来，高机能全数(shu)字(zi)(zi)控制(zhi)芯片已经开(kai)发(fa)，用度也已降到比较公道的(de)水平，欧美已有多家(jia)公司开(kai)发(fa)并(bing)制(zhi)造出开(kai)关(guan)变换器(qi)的(de)数(shu)字(zi)(zi)控制(zhi)芯片及软件。

一般高功率因数AC／DC开关(guan)电源，由两级拓(tuo)扑组(zu)成，对(dui)于小功率AC／DC开关(guan)电源来(lai)说，采用两级拓(tuo)扑结构总体效率低(di)、本(ben)钱高。

电磁(ci)兼(jian)容性

高(gao)频开关电源(yuan)的电磁兼容(rong)(EMC)题目(mu)有其特(te)殊性(xing)。

实(shi)际上，在(zai)电(dian)(dian)源集成技术的发(fa)展进程中，已经经历了电(dian)(dian)力半导(dao)(dao)体器件(jian)模(mo)块化(hua)(hua)，功率与(yu)控制电(dian)(dian)路的集成化(hua)(hua)，集成无源元件(jian)(包括磁(ci)集成技术)等发(fa)展阶段。功率半导(dao)(dao)体器件(jian)在(zai)开关过程中所产生的di／dt和dv／dt，将(jiang)引起(qi)强(qiang)盛的传导(dao)(dao)电(dian)(dian)磁(ci)干扰和谐波干扰，以及强(qiang)电(dian)(dian)磁(ci)场(通常是(shi)近场)辐(fu)射。

IPEM将功率器件与电路、控制以及检测、执行等单元集成封装，得到尺度的，可制造的模块，既可用于尺度设计，也可用于专用、特殊设计。海内外很多大学均开展了电力电子电路的电磁干扰和电磁兼容性题目的研究，并取得了不少可喜成果。早期泛起的是串联型开关电源，其主电路拓扑与线性电源相仿，但MOS管封装(zhuang)功率晶体管工作于开关状态。采用功率因数校正(PFC)变换器，网侧功率因数可进步到0.95"0.99，输入电流THD<10％。
第一个阶段是功率半导体器件从双极型器(qi)(qi)件(jian)(BPT、SCR、GT0)发(fa)展(zhan)为MOS型器(qi)(qi)件(jian)(功(gong)率MOS-FET、IGBT、IGCT等)，使(shi)(shi)电(dian)(dian)(dian)力电(dian)(dian)(dian)子系统(tong)(tong)有可能实现高频(pin)化，并大幅(fu)度(du)降(jiang)低(di)导(dao)通损耗，电(dian)(dian)(dian)路(lu)也更(geng)为简(jian)朴。为了减(jian)小电(dian)(dian)(dian)力电(dian)(dian)(dian)子设备的(de)体(ti)(ti)积(ji)(ji)(ji)和重量(liang)，须想法改进电(dian)(dian)(dian)容(rong)器(qi)(qi)的(de)机(ji)(ji)能，进步能量(liang)密度(du)，并研究开发(fa)适合(he)于(yu)电(dian)(dian)(dian)力电(dian)(dian)(dian)子及电(dian)(dian)(dian)源(yuan)系统(tong)(tong)用的(de)新型电(dian)(dian)(dian)容(rong)器(qi)(qi)，要求(qiu)电(dian)(dian)(dian)容(rong)量(liang)大、等效(xiao)串联电(dian)(dian)(dian)阻(ESR)小、体(ti)(ti)积(ji)(ji)(ji)小等。近年来的(de)发(fa)展(zhan)方向是将(jiang)小功(gong)率电(dian)(dian)(dian)源(yuan)系统(tong)(tong)集成在一(yi)个芯片(pian)上，可以使(shi)(shi)电(dian)(dian)(dian)源(yuan)产品更(geng)为紧(jin)凑，体(ti)(ti)积(ji)(ji)(ji)更(geng)小，也减(jian)小了引(yin)线(xian)长度(du)，从而减(jian)小了寄(ji)生参数。对高频(pin)磁元件(jian)所用的(de)磁性材料，要求(qiu)其损耗小、散热(re)机(ji)(ji)能好(hao)、磁机(ji)(ji)能优(you)胜。

碳化(hua)硅(SiC)是功率(lv)半导体(ti)器(qi)件晶(jing)片的理(li)想材(cai)料，其长处(chu)是禁带宽、工作温度高(可达(da)600℃)、热(re)不乱性好(hao)、通态电阻小、导热(re)机能好(hao)、漏电流极小、PN结(jie)耐(nai)压高等，有利于制造(zao)出(chu)耐(nai)高温的高频大功率(lv)半导体(ti)器(qi)件。

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