MOS二极管(guan)(guan)在(zai)半导体(ti)(ti)器(qi)(qi)件(jian)在(zai)物(wu)理中(zhong)(zhong)占有极其重要(yao)的(de)(de)地位，因为它(ta)是研究半导体(ti)(ti)表面特(te)...MOS二极管(guan)(guan)在(zai)半导体(ti)(ti)器(qi)(qi)件(jian)在(zai)物(wu)理中(zhong)(zhong)占有极其重要(yao)的(de)(de)地位，因为它(ta)是研究半导体(ti)(ti)表面特(te)性最有用的(de)(de)器(qi)(qi)件(jian)之一．在(zai)实际应(ying)用中(zhong)(zhong)．它(ta)是先进(jin)集成电路中(zhong)(zhong)最重要(yao)的(de)(de)MOSFFT器(qi)(qi)件(jian)的(de)(de)枢纽(niu)．...
线性电源的(de)动(dong)态(tai)响应(ying)非(fei)常快，稳压性能好(hao)，只可惜其(qi)(qi)功率转换(huan)效(xiao)率太低。要(yao)想(xiang)提高(gao)(gao)效(xiao)...线性电源的(de)动(dong)态(tai)响应(ying)非(fei)常快，稳压性能好(hao)，只可惜其(qi)(qi)功率转换(huan)效(xiao)率太低。要(yao)想(xiang)提高(gao)(gao)效(xiao)率，就必须使图 1-2中的(de)功率调整(zheng)器件（即调整(zheng)管）处于开(kai)关上(shang)作状态(tai)，再对图1-2所示...
MOSFET没有存储(chu)时(shi)间(jian)(jian)(jian)(jian) ，只存一个关断延(yan)迟(chi)时(shi)间(jian)(jian)(jian)(jian) 。关断延(yan)迟(chi)时(shi)间(jian)(jian)(jian)(jian)是(shi)栅极电(dian)(dian)(dian)压(ya)从最高电(dian)(dian)(dian)...MOSFET没有存储(chu)时(shi)间(jian)(jian)(jian)(jian) ，只存一个关断延(yan)迟(chi)时(shi)间(jian)(jian)(jian)(jian) 。关断延(yan)迟(chi)时(shi)间(jian)(jian)(jian)(jian)是(shi)栅极电(dian)(dian)(dian)压(ya)从最高电(dian)(dian)(dian)压(ya)（约(yue)为(wei)OV ） 下降到电(dian)(dian)(dian)压(ya) Vd1 图 9.3 b所(suo)需的时(shi)间(jian)(jian)(jian)(jian) 。在这个时(shi)间(jian)(jian)(jian)(jian)段(duan)内漏极电(dian)(dian)(dian)流保持不...
MOSFET 管(guan)还(hai)有N个(ge)方(fang)法 ，就是设(she)它(ta)的最(zui)大(da)结(jie)点(dian)温度一(yi)一(yi)比如(ru)说可(ke)以(yi)将(jiang)其设(she)为 100℃...MOSFET 管(guan)还(hai)有N个(ge)方(fang)法 ，就是设(she)它(ta)的最(zui)大(da)结(jie)点(dian)温度一(yi)一(yi)比如(ru)说可(ke)以(yi)将(jiang)其设(she)为 100℃。然(ran)后假设(she)一(yi)个(ge)合理的较(jiao)低的 MOSFET 管(guan)结(jie)点(dian)到(dao)外壳的温升 （ 这样就小需里太低的外 壳...
它们(men)大(da)(da)多应(ying)用(yong)(yong)于(yu)低功(gong) 率(lv)(lv)场(chang)合 ，这(zhei)些电(dian)路通(tong)过各种方法来达到以 F两个目(mu)标 ：①用(yong)(yong)...它们(men)大(da)(da)多应(ying)用(yong)(yong)于(yu)低功(gong) 率(lv)(lv)场(chang)合 ，这(zhei)些电(dian)路通(tong)过各种方法来达到以 F两个目(mu)标 ：①用(yong)(yong)最少的元器件获得反向(xiang)基极电(dian)压和反向(xiang)基极电(dian)流(liu)，或者在关断和导通(tong)的过相巾将基极和发...
如上所述 ，栅极(ji)(ji)(ji)驱(qu)动电(dian)路必(bi)须(xu)(xu)能(neng)(neng)(neng)输出(chu)电(dian)流 ，即(ji)成(cheng)为(wei) “ 源(yuan)”。同(tong)时，为(wei)了提供(gong)栅极(ji)(ji)(ji)...如上所述 ，栅极(ji)(ji)(ji)驱(qu)动电(dian)路必(bi)须(xu)(xu)能(neng)(neng)(neng)输出(chu)电(dian)流 ，即(ji)成(cheng)为(wei) “ 源(yuan)”。同(tong)时，为(wei)了提供(gong)栅极(ji)(ji)(ji)反向电(dian) 压，驱(qu)动电(dian)路必(bi)须(xu)(xu)能(neng)(neng)(neng)从栅极(ji)(ji)(ji)抽取电(dian)流 ，即(ji)成(cheng)为(wei) “ 汇”。大(da)部分早(zao)期的 PWM 芯(xin)...
