利盈娱乐(中国)创新平台有限公司

P沟MOS晶体管

金属氧化物半(ban)导(dao)体场(chang)效应(ying)(MOS)晶体管(guan)(guan)可(ke)分(fen)为N沟(gou)(gou)(gou)道(dao)(dao)与P沟(gou)(gou)(gou)道(dao)(dao)两(liang)大(da)类(lei)，P沟(gou)(gou)(gou)道(dao)(dao)硅MOS场(chang)效应(ying)晶体管(guan)(guan)在(zai)N型(xing)(xing)(xing)硅衬底上(shang)(shang)有两(liang)个P+区，分(fen)别叫做源极(ji)(ji)(ji)和(he)(he)漏极(ji)(ji)(ji)，两(liang)极(ji)(ji)(ji)之间(jian)不通导(dao)，柵极(ji)(ji)(ji)上(shang)(shang)加有足够的(de)(de)正电(dian)压(源极(ji)(ji)(ji)接(jie)地(di))时，柵极(ji)(ji)(ji)下的(de)(de)N型(xing)(xing)(xing)硅表(biao)面呈现P型(xing)(xing)(xing)反型(xing)(xing)(xing)层，成为连接(jie)源极(ji)(ji)(ji)和(he)(he)漏极(ji)(ji)(ji)的(de)(de)沟(gou)(gou)(gou)道(dao)(dao)。改变(bian)栅(zha)(zha)压可(ke)以改变(bian)沟(gou)(gou)(gou)道(dao)(dao)中的(de)(de)电(dian)子密度，从而改变(bian)沟(gou)(gou)(gou)道(dao)(dao)的(de)(de)电(dian)阻。这种MOS场(chang)效应(ying)晶体管(guan)(guan)称(cheng)(cheng)为P沟(gou)(gou)(gou)道(dao)(dao)增强型(xing)(xing)(xing)场(chang)效应(ying)晶体管(guan)(guan)。如果N型(xing)(xing)(xing)硅衬底表(biao)面不加栅(zha)(zha)压就已存在(zai)P型(xing)(xing)(xing)反型(xing)(xing)(xing)层沟(gou)(gou)(gou)道(dao)(dao)，加上(shang)(shang)适当的(de)(de)偏压，可(ke)使(shi)沟(gou)(gou)(gou)道(dao)(dao)的(de)(de)电(dian)阻增大(da)或减小。这样的(de)(de)MOS场(chang)效应(ying)晶体管(guan)(guan)称(cheng)(cheng)为P沟(gou)(gou)(gou)道(dao)(dao)耗尽(jin)型(xing)(xing)(xing)场(chang)效应(ying)晶体管(guan)(guan)。统(tong)称(cheng)(cheng)为PMOS晶体管(guan)(guan)。

P沟(gou)(gou)道(dao)MOS晶(jing)体(ti)(ti)管(guan)(guan)的(de)(de)空穴迁(qian)移率低,因(yin)而在MOS晶(jing)体(ti)(ti)管(guan)(guan)的(de)(de)几何(he)尺寸和工(gong)作(zuo)电(dian)(dian)压(ya)(ya)绝对值相等的(de)(de)情况(kuang)下，PMOS晶(jing)体(ti)(ti)管(guan)(guan)的(de)(de)跨导(dao)小(xiao)(xiao)于(yu)N沟(gou)(gou)道(dao)MOS晶(jing)体(ti)(ti)管(guan)(guan)。此外，P沟(gou)(gou)道(dao)MOS晶(jing)体(ti)(ti)管(guan)(guan)阈值电(dian)(dian)压(ya)(ya)的(de)(de)绝对值一般偏高，要求(qiu)有较高的(de)(de)工(gong)作(zuo)电(dian)(dian)压(ya)(ya)。它的(de)(de)供电(dian)(dian)电(dian)(dian)源(yuan)的(de)(de)电(dian)(dian)压(ya)(ya)大小(xiao)(xiao)和极(ji)(ji)性,与双极(ji)(ji)型晶(jing)体(ti)(ti)管(guan)(guan)——晶(jing)体(ti)(ti)管(guan)(guan)逻(luo)辑(ji)电(dian)(dian)路(lu)(lu)不兼容。PMOS因(yin)逻(luo)辑(ji)摆(bai)幅大，充电(dian)(dian)放电(dian)(dian)过程长，加之器件跨导(dao)小(xiao)(xiao)，所以工(gong)作(zuo)速度更低，在NMOS电(dian)(dian)路(lu)(lu)(见N沟(gou)(gou)道(dao)金属—氧(yang)化(hua)物(wu)—半导(dao)体(ti)(ti)集(ji)成电(dian)(dian)路(lu)(lu))出现之后，多数已为NMOS电(dian)(dian)路(lu)(lu)所取代。只是,因(yin)PMOS电(dian)(dian)路(lu)(lu)工(gong)艺简(jian)单,价格(ge)便宜(yi)，有些(xie)中规(gui)模和小(xiao)(xiao)规(gui)模数字控制电(dian)(dian)路(lu)(lu)仍采用PMOS电(dian)(dian)路(lu)(lu)技术。

PMOS集成电(dian)(dian)路(lu)是(shi)一种适合在(zai)(zai)低速、低频领(ling)域内应(ying)用的(de)器(qi)件。PMOS集成电(dian)(dian)路(lu)采用-24V电(dian)(dian)压供电(dian)(dian)。如图5所示的(de)CMOS-PMOS接口电(dian)(dian)路(lu)采用两种电(dian)(dian)源供电(dian)(dian)。采用直接接口方(fang)式，一般CMOS的(de)电(dian)(dian)源电(dian)(dian)压选择(ze)在(zai)(zai)10～12V就能满足PMOS对输入电(dian)(dian)平的(de)要求(qiu)。

什么是PMOS

PMOS是指n型衬底、p沟道，靠空穴(xue)的流动运送电流的MOS管。

P沟(gou)(gou)道(dao)MOS晶(jing)(jing)体管的(de)(de)空(kong)穴迁移率低，因而(er)在(zai)MOS晶(jing)(jing)体管的(de)(de)几何尺寸和(he)(he)工作电(dian)(dian)压绝(jue)(jue)对(dui)值相(xiang)等的(de)(de)情况下，PMOS晶(jing)(jing)体管的(de)(de)跨导小于(yu)N沟(gou)(gou)道(dao)MOS晶(jing)(jing)体管。此外(wai)，P沟(gou)(gou)道(dao)MOS晶(jing)(jing)体管阈值电(dian)(dian)压的(de)(de)绝(jue)(jue)对(dui)值一般(ban)偏高，要求有(you)较高的(de)(de)工作电(dian)(dian)压。它的(de)(de)供电(dian)(dian)电(dian)(dian)源的(de)(de)电(dian)(dian)压大小和(he)(he)极性，与(yu)双极型晶(jing)(jing)体管——晶(jing)(jing)体管逻(luo)辑电(dian)(dian)路(lu)(lu)不兼容。PMOS因逻(luo)辑摆幅(fu)大，充电(dian)(dian)放电(dian)(dian)过程长(zhang)，加之器件跨导小，所以(yi)工作速度更(geng)低，在(zai)NMOS电(dian)(dian)路(lu)(lu)（见N沟(gou)(gou)道(dao)金属(shu)—氧(yang)化物—半导体集成电(dian)(dian)路(lu)(lu)）出现之后，多数(shu)已为NMOS电(dian)(dian)路(lu)(lu)所取代(dai)。只是，因PMOS电(dian)(dian)路(lu)(lu)工艺简单，价格(ge)便(bian)宜，有(you)些(xie)中规(gui)模(mo)和(he)(he)小规(gui)模(mo)数(shu)字(zi)控制电(dian)(dian)路(lu)(lu)仍采(cai)用(yong)PMOS电(dian)(dian)路(lu)(lu)技术。

PMOS工作原理

PMOS的(de)(de)(de)(de)工作原理与NMOS相(xiang)类似。因为PMOS是(shi)(shi)(shi)(shi)N型(xing)硅衬(chen)底，其中(zhong)(zhong)的(de)(de)(de)(de)多数(shu)载流子是(shi)(shi)(shi)(shi)空穴(xue)，少数(shu)载流子是(shi)(shi)(shi)(shi)电(dian)(dian)(dian)子，源漏区(qu)的(de)(de)(de)(de)掺(chan)杂(za)类型(xing)是(shi)(shi)(shi)(shi)P型(xing)，所以，PMOS的(de)(de)(de)(de)工作条件是(shi)(shi)(shi)(shi)在栅上相(xiang)对于(yu)源极施加(jia)负(fu)电(dian)(dian)(dian)压，亦即在PMOS的(de)(de)(de)(de)栅上施加(jia)的(de)(de)(de)(de)是(shi)(shi)(shi)(shi)负(fu)电(dian)(dian)(dian)荷(he)(he)电(dian)(dian)(dian)子，而在衬(chen)底感(gan)应(ying)的(de)(de)(de)(de)是(shi)(shi)(shi)(shi)可运(yun)动的(de)(de)(de)(de)正(zheng)电(dian)(dian)(dian)荷(he)(he)空穴(xue)和(he)带(dai)固(gu)定正(zheng)电(dian)(dian)(dian)荷(he)(he)的(de)(de)(de)(de)耗尽(jin)层，不(bu)考虑(lv)二(er)氧化(hua)硅中(zhong)(zhong)存(cun)在的(de)(de)(de)(de)电(dian)(dian)(dian)荷(he)(he)的(de)(de)(de)(de)影响，衬(chen)底中(zhong)(zhong)感(gan)应(ying)的(de)(de)(de)(de)正(zheng)电(dian)(dian)(dian)荷(he)(he)数(shu)量(liang)就等(deng)于(yu)PMOS栅上的(de)(de)(de)(de)负(fu)电(dian)(dian)(dian)荷(he)(he)的(de)(de)(de)(de)数(shu)量(liang)。

当达到强反型(xing)时，在(zai)相对于源端(duan)(duan)为负(fu)的漏源电(dian)(dian)压的作用下，源端(duan)(duan)的正电(dian)(dian)荷空穴经(jing)过导(dao)通的P型(xing)沟道(dao)到达漏端(duan)(duan)，形成从源到漏的源漏电(dian)(dian)流。同样地，VGS越(yue)负(fu)(绝对值越(yue)大)，沟道(dao)的导(dao)通电(dian)(dian)阻(zu)越(yue)小，电(dian)(dian)流的数(shu)值越(yue)大。

PMOS的(de)工(gong)作(zuo)原理与NMOS相(xiang)类似。因为(wei)PMOS是(shi)N型硅衬底，其中(zhong)的(de)多(duo)数载(zai)(zai)流子(zi)是(shi)空穴(xue)(xue)，少(shao)数载(zai)(zai)流子(zi)是(shi)电(dian)(dian)(dian)(dian)子(zi)，源(yuan)(yuan)漏区的(de)掺杂类型是(shi)P型，所以，PMOS的(de)工(gong)作(zuo)条(tiao)件(jian)是(shi)在栅上(shang)相(xiang)对于(yu)源(yuan)(yuan)极施(shi)加(jia)负(fu)(fu)电(dian)(dian)(dian)(dian)压(ya)，亦即在PMOS的(de)栅上(shang)施(shi)加(jia)的(de)是(shi)负(fu)(fu)电(dian)(dian)(dian)(dian)荷(he)电(dian)(dian)(dian)(dian)子(zi)，而在衬底感应(ying)的(de)是(shi)可运动的(de)正(zheng)电(dian)(dian)(dian)(dian)荷(he)空穴(xue)(xue)和带固(gu)定正(zheng)电(dian)(dian)(dian)(dian)荷(he)的(de)耗尽层(ceng)，不考虑二(er)氧化硅中(zhong)存在的(de)电(dian)(dian)(dian)(dian)荷(he)的(de)影响，衬底中(zhong)感应(ying)的(de)正(zheng)电(dian)(dian)(dian)(dian)荷(he)数量就(jiu)等(deng)于(yu)PMOS栅上(shang)的(de)负(fu)(fu)电(dian)(dian)(dian)(dian)荷(he)的(de)数量。当达(da)到(dao)强反型时，在相(xiang)对于(yu)源(yuan)(yuan)端(duan)为(wei)负(fu)(fu)的(de)漏源(yuan)(yuan)电(dian)(dian)(dian)(dian)压(ya)的(de)作(zuo)用下(xia)，源(yuan)(yuan)端(duan)的(de)正(zheng)电(dian)(dian)(dian)(dian)荷(he)空穴(xue)(xue)经(jing)过(guo)导(dao)通的(de)P型沟(gou)道(dao)到(dao)达(da)漏端(duan)，形成(cheng)从源(yuan)(yuan)到(dao)漏的(de)源(yuan)(yuan)漏电(dian)(dian)(dian)(dian)流。同样地(di)，VGS越(yue)负(fu)(fu)(绝对值越(yue)大)，沟(gou)道(dao)的(de)导(dao)通电(dian)(dian)(dian)(dian)阻越(yue)小(xiao)，电(dian)(dian)(dian)(dian)流的(de)数值越(yue)大。

与NMOS一样，导(dao)通(tong)的PMOS的工作区(qu)域也分为非饱(bao)和(he)区(qu)，临界(jie)饱(bao)和(he)点和(he)饱(bao)和(he)区(qu)。当然，不论NMOS还(hai)是(shi)(shi)PMOS，当未形成反型沟道时(shi)，都处于截止(zhi)区(qu)，其电压条件是(shi)(shi)

VGS

VGS>VTP (PMOS)

值得注意的(de)(de)是(shi)，PMOS的(de)(de)VGS和VTP都(dou)是(shi)负值。

PMOS集(ji)成(cheng)电(dian)(dian)路是一(yi)种适合在低(di)速(su)、低(di)频领域内应用(yong)(yong)的器件。PMOS集(ji)成(cheng)电(dian)(dian)路采用(yong)(yong)-24V电(dian)(dian)压供电(dian)(dian)。CMOS-PMOS接(jie)口(kou)电(dian)(dian)路采用(yong)(yong)两种电(dian)(dian)源供电(dian)(dian)。采用(yong)(yong)直接(jie)接(jie)口(kou)方式，一(yi)般(ban)CMOS的电(dian)(dian)源电(dian)(dian)压选择在10～12V就能满足PMOS对输入电(dian)(dian)平的要(yao)求。

MOS场效应晶体管具有很(hen)高的输入阻抗(kang)，在电路(lu)中便于直接耦(ou)合，容易制(zhi)成(cheng)规模(mo)大的集成(cheng)电路(lu)。

深圳KIA利盈(ying)娱乐主要研发、生产、经营：场效应管、三端稳压管、快恢复二极管等半导体器件，专注大功率MOS管制造13年。

联系方式：邹先生

联(lian)系电话(hua)：0755-83888366-8022

手机：18123972950

QQ：2880195519

联(lian)系地址：深圳市福田区车(che)公庙天安数码城天吉大(da)厦CD座5C1

请搜(sou)微信公众(zhong)号:“KIA半导体”或(huo)扫一扫下图“关注”官方微信公众(zhong)号

请“关注”官方微信公众号:提供 MOS管  技(ji)术帮助