利盈娱乐(中国)创新平台有限公司

P沟MOS晶体管

金属氧化物半导(dao)体(ti)(ti)场效(xiao)(xiao)应(MOS)晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)可(ke)分为(wei)(wei)N沟(gou)(gou)(gou)(gou)道(dao)(dao)与P沟(gou)(gou)(gou)(gou)道(dao)(dao)两(liang)大(da)类，P沟(gou)(gou)(gou)(gou)道(dao)(dao)硅MOS场效(xiao)(xiao)应晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)在(zai)N型(xing)硅衬底(di)上(shang)有两(liang)个P+区，分别叫做源(yuan)极(ji)(ji)和漏极(ji)(ji)，两(liang)极(ji)(ji)之间不通(tong)导(dao)，柵极(ji)(ji)上(shang)加有足够(gou)的(de)(de)正电压(ya)(源(yuan)极(ji)(ji)接地)时(shi)，柵极(ji)(ji)下的(de)(de)N型(xing)硅表面呈(cheng)现P型(xing)反(fan)型(xing)层，成为(wei)(wei)连(lian)接源(yuan)极(ji)(ji)和漏极(ji)(ji)的(de)(de)沟(gou)(gou)(gou)(gou)道(dao)(dao)。改变(bian)栅压(ya)可(ke)以改变(bian)沟(gou)(gou)(gou)(gou)道(dao)(dao)中的(de)(de)电子密度(du)，从而改变(bian)沟(gou)(gou)(gou)(gou)道(dao)(dao)的(de)(de)电阻。这种MOS场效(xiao)(xiao)应晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)称(cheng)为(wei)(wei)P沟(gou)(gou)(gou)(gou)道(dao)(dao)增(zeng)强型(xing)场效(xiao)(xiao)应晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)。如果N型(xing)硅衬底(di)表面不加栅压(ya)就已(yi)存在(zai)P型(xing)反(fan)型(xing)层沟(gou)(gou)(gou)(gou)道(dao)(dao)，加上(shang)适当的(de)(de)偏压(ya)，可(ke)使(shi)沟(gou)(gou)(gou)(gou)道(dao)(dao)的(de)(de)电阻增(zeng)大(da)或减(jian)小(xiao)。这样的(de)(de)MOS场效(xiao)(xiao)应晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)称(cheng)为(wei)(wei)P沟(gou)(gou)(gou)(gou)道(dao)(dao)耗尽型(xing)场效(xiao)(xiao)应晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)。统称(cheng)为(wei)(wei)PMOS晶(jing)(jing)体(ti)(ti)管(guan)(guan)(guan)。

P沟(gou)道(dao)(dao)MOS晶体(ti)(ti)管的(de)(de)(de)空穴迁移(yi)率低(di),因而(er)在MOS晶体(ti)(ti)管的(de)(de)(de)几何尺寸和工(gong)(gong)作(zuo)电(dian)(dian)(dian)压(ya)(ya)绝(jue)对值相等的(de)(de)(de)情况下，PMOS晶体(ti)(ti)管的(de)(de)(de)跨(kua)导小于N沟(gou)道(dao)(dao)MOS晶体(ti)(ti)管。此外，P沟(gou)道(dao)(dao)MOS晶体(ti)(ti)管阈(yu)值电(dian)(dian)(dian)压(ya)(ya)的(de)(de)(de)绝(jue)对值一般偏高，要求有较高的(de)(de)(de)工(gong)(gong)作(zuo)电(dian)(dian)(dian)压(ya)(ya)。它的(de)(de)(de)供电(dian)(dian)(dian)电(dian)(dian)(dian)源的(de)(de)(de)电(dian)(dian)(dian)压(ya)(ya)大(da)小和极性,与双(shuang)极型晶体(ti)(ti)管——晶体(ti)(ti)管逻(luo)辑电(dian)(dian)(dian)路(lu)不兼容。PMOS因逻(luo)辑摆幅大(da)，充电(dian)(dian)(dian)放电(dian)(dian)(dian)过(guo)程长，加之器件跨(kua)导小，所(suo)以工(gong)(gong)作(zuo)速度更低(di)，在NMOS电(dian)(dian)(dian)路(lu)(见(jian)N沟(gou)道(dao)(dao)金(jin)属(shu)—氧化物—半(ban)导体(ti)(ti)集成电(dian)(dian)(dian)路(lu))出现之后，多数已为(wei)NMOS电(dian)(dian)(dian)路(lu)所(suo)取代(dai)。只是(shi),因PMOS电(dian)(dian)(dian)路(lu)工(gong)(gong)艺简单,价格便宜，有些中规模和小规模数字控制电(dian)(dian)(dian)路(lu)仍采用PMOS电(dian)(dian)(dian)路(lu)技术。

PMOS集(ji)成(cheng)电(dian)(dian)(dian)(dian)(dian)路(lu)是一(yi)种适(shi)合在低速、低频领域内应用的器件。PMOS集(ji)成(cheng)电(dian)(dian)(dian)(dian)(dian)路(lu)采(cai)用-24V电(dian)(dian)(dian)(dian)(dian)压供(gong)电(dian)(dian)(dian)(dian)(dian)。如图5所示的CMOS-PMOS接(jie)口电(dian)(dian)(dian)(dian)(dian)路(lu)采(cai)用两种电(dian)(dian)(dian)(dian)(dian)源供(gong)电(dian)(dian)(dian)(dian)(dian)。采(cai)用直(zhi)接(jie)接(jie)口方(fang)式，一(yi)般CMOS的电(dian)(dian)(dian)(dian)(dian)源电(dian)(dian)(dian)(dian)(dian)压选择在10～12V就能满足PMOS对输入电(dian)(dian)(dian)(dian)(dian)平(ping)的要(yao)求(qiu)。

什么是PMOS

PMOS是(shi)指n型(xing)衬底、p沟道，靠空(kong)穴(xue)的流动运送电流的MOS管。

P沟(gou)道MOS晶(jing)体(ti)(ti)管的(de)(de)(de)空穴迁移率低，因而在(zai)MOS晶(jing)体(ti)(ti)管的(de)(de)(de)几何尺(chi)寸和(he)工(gong)作电压绝对值相等的(de)(de)(de)情况(kuang)下(xia)，PMOS晶(jing)体(ti)(ti)管的(de)(de)(de)跨(kua)导小(xiao)(xiao)于(yu)N沟(gou)道MOS晶(jing)体(ti)(ti)管。此外，P沟(gou)道MOS晶(jing)体(ti)(ti)管阈(yu)值电压的(de)(de)(de)绝对值一般偏高，要(yao)求(qiu)有较(jiao)高的(de)(de)(de)工(gong)作电压。它(ta)的(de)(de)(de)供电电源的(de)(de)(de)电压大小(xiao)(xiao)和(he)极性，与双极型(xing)晶(jing)体(ti)(ti)管——晶(jing)体(ti)(ti)管逻辑(ji)电路(lu)(lu)不兼(jian)容。PMOS因逻辑(ji)摆幅大，充电放电过程(cheng)长，加之(zhi)器件跨(kua)导小(xiao)(xiao)，所以工(gong)作速度更低，在(zai)NMOS电路(lu)(lu)（见(jian)N沟(gou)道金属—氧化(hua)物—半导体(ti)(ti)集(ji)成电路(lu)(lu)）出现之(zhi)后，多数(shu)已(yi)为NMOS电路(lu)(lu)所取(qu)代(dai)。只是，因PMOS电路(lu)(lu)工(gong)艺简单，价格便(bian)宜，有些中规模和(he)小(xiao)(xiao)规模数(shu)字控制电路(lu)(lu)仍采用(yong)PMOS电路(lu)(lu)技术(shu)。

PMOS工作原理

PMOS的(de)(de)(de)工作(zuo)原理与(yu)NMOS相类(lei)似。因为PMOS是(shi)(shi)(shi)N型硅衬(chen)底(di)，其中(zhong)(zhong)的(de)(de)(de)多数载(zai)流子是(shi)(shi)(shi)空穴，少数载(zai)流子是(shi)(shi)(shi)电子，源漏区的(de)(de)(de)掺杂类(lei)型是(shi)(shi)(shi)P型，所以，PMOS的(de)(de)(de)工作(zuo)条件是(shi)(shi)(shi)在(zai)(zai)(zai)栅(zha)上相对于源极施加负(fu)(fu)电压，亦即(ji)在(zai)(zai)(zai)PMOS的(de)(de)(de)栅(zha)上施加的(de)(de)(de)是(shi)(shi)(shi)负(fu)(fu)电荷(he)(he)电子，而在(zai)(zai)(zai)衬(chen)底(di)感应的(de)(de)(de)是(shi)(shi)(shi)可(ke)运动的(de)(de)(de)正电荷(he)(he)空穴和带(dai)固定(ding)正电荷(he)(he)的(de)(de)(de)耗尽(jin)层，不考虑二氧化硅中(zhong)(zhong)存在(zai)(zai)(zai)的(de)(de)(de)电荷(he)(he)的(de)(de)(de)影响(xiang)，衬(chen)底(di)中(zhong)(zhong)感应的(de)(de)(de)正电荷(he)(he)数量(liang)就等(deng)于PMOS栅(zha)上的(de)(de)(de)负(fu)(fu)电荷(he)(he)的(de)(de)(de)数量(liang)。

当(dang)达到强反型时，在相对于源(yuan)端(duan)为负的(de)(de)漏源(yuan)电(dian)(dian)压的(de)(de)作用(yong)下，源(yuan)端(duan)的(de)(de)正电(dian)(dian)荷空穴经过导(dao)(dao)通的(de)(de)P型沟道到达漏端(duan)，形成从源(yuan)到漏的(de)(de)源(yuan)漏电(dian)(dian)流。同样地，VGS越(yue)负(绝(jue)对值越(yue)大)，沟道的(de)(de)导(dao)(dao)通电(dian)(dian)阻越(yue)小，电(dian)(dian)流的(de)(de)数(shu)值越(yue)大。

PMOS的(de)(de)(de)(de)工(gong)作原理与NMOS相类(lei)似。因为(wei)PMOS是(shi)(shi)N型(xing)(xing)硅衬(chen)(chen)底，其中(zhong)的(de)(de)(de)(de)多数载(zai)流(liu)子(zi)是(shi)(shi)空(kong)(kong)穴，少数载(zai)流(liu)子(zi)是(shi)(shi)电(dian)(dian)子(zi)，源(yuan)(yuan)漏(lou)区(qu)的(de)(de)(de)(de)掺杂类(lei)型(xing)(xing)是(shi)(shi)P型(xing)(xing)，所以，PMOS的(de)(de)(de)(de)工(gong)作条件是(shi)(shi)在栅(zha)上(shang)相对(dui)于源(yuan)(yuan)极(ji)施加负电(dian)(dian)压，亦(yi)即在PMOS的(de)(de)(de)(de)栅(zha)上(shang)施加的(de)(de)(de)(de)是(shi)(shi)负电(dian)(dian)荷(he)(he)(he)电(dian)(dian)子(zi)，而在衬(chen)(chen)底感应(ying)的(de)(de)(de)(de)是(shi)(shi)可运动(dong)的(de)(de)(de)(de)正(zheng)(zheng)电(dian)(dian)荷(he)(he)(he)空(kong)(kong)穴和带固定正(zheng)(zheng)电(dian)(dian)荷(he)(he)(he)的(de)(de)(de)(de)耗尽层，不考虑二氧化(hua)硅中(zhong)存在的(de)(de)(de)(de)电(dian)(dian)荷(he)(he)(he)的(de)(de)(de)(de)影(ying)响，衬(chen)(chen)底中(zhong)感应(ying)的(de)(de)(de)(de)正(zheng)(zheng)电(dian)(dian)荷(he)(he)(he)数量就等于PMOS栅(zha)上(shang)的(de)(de)(de)(de)负电(dian)(dian)荷(he)(he)(he)的(de)(de)(de)(de)数量。当达(da)到强反型(xing)(xing)时(shi)，在相对(dui)于源(yuan)(yuan)端为(wei)负的(de)(de)(de)(de)漏(lou)源(yuan)(yuan)电(dian)(dian)压的(de)(de)(de)(de)作用下，源(yuan)(yuan)端的(de)(de)(de)(de)正(zheng)(zheng)电(dian)(dian)荷(he)(he)(he)空(kong)(kong)穴经过导通的(de)(de)(de)(de)P型(xing)(xing)沟(gou)道到达(da)漏(lou)端，形成从源(yuan)(yuan)到漏(lou)的(de)(de)(de)(de)源(yuan)(yuan)漏(lou)电(dian)(dian)流(liu)。同样地，VGS越(yue)负(绝(jue)对(dui)值越(yue)大)，沟(gou)道的(de)(de)(de)(de)导通电(dian)(dian)阻越(yue)小，电(dian)(dian)流(liu)的(de)(de)(de)(de)数值越(yue)大。

与NMOS一(yi)样，导通的PMOS的工作区域也分为非饱和(he)区，临界饱和(he)点和(he)饱和(he)区。当然，不(bu)论(lun)NMOS还是PMOS，当未形成(cheng)反型沟(gou)道时，都处于截止区，其电压条件是

VGS

VGS>VTP (PMOS)

值得注(zhu)意的是，PMOS的VGS和VTP都是负值。

PMOS集(ji)成电(dian)(dian)(dian)路是(shi)一种适合在(zai)低速、低频(pin)领域内应用的器(qi)件。PMOS集(ji)成电(dian)(dian)(dian)路采(cai)用-24V电(dian)(dian)(dian)压供电(dian)(dian)(dian)。CMOS-PMOS接口电(dian)(dian)(dian)路采(cai)用两(liang)种电(dian)(dian)(dian)源(yuan)供电(dian)(dian)(dian)。采(cai)用直接接口方式(shi)，一般CMOS的电(dian)(dian)(dian)源(yuan)电(dian)(dian)(dian)压选择(ze)在(zai)10～12V就能满(man)足PMOS对输入(ru)电(dian)(dian)(dian)平的要求。

MOS场效应晶体管具(ju)有很高的输入(ru)阻抗，在电(dian)路(lu)中便于直接耦合，容易(yi)制(zhi)成(cheng)规模大的集成(cheng)电(dian)路(lu)。

深圳KIA利盈娱乐主要研发、生产、经营：场效应管、三端稳压管、快恢复二极管等半导体器件，专注大功率MOS管制造13年。

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