场效应管导通条件

场效应(ying)管导通条件与截止由栅源电压来控制，对(dui)于(yu)增强型(xing)场效应(ying)管来说(shuo)，N沟(gou)通的(de)(de)管子加正向电压即导通，P沟(gou)通的(de)(de)管子则加反向电压。一般(ban)2V ~4V就可以了(le)。

但是，场效(xiao)应管分为增(zeng)强型(xing)(xing)（常开型(xing)(xing)）和耗尽(jin)型(xing)(xing)（常闭型(xing)(xing)），增(zeng)强型(xing)(xing)的管子(zi)是需(xu)要加电压(ya)才能导通(tong)的，而耗尽(jin)型(xing)(xing)管子(zi)本来(lai)就(jiu)处于导通(tong)状态，加栅源电压(ya)是为了(le)使其截止。

开关(guan)只(zhi)有两种状(zhuang)态通和(he)(he)断，三极(ji)管(guan)(guan)和(he)(he)场(chang)效应(ying)管(guan)(guan)工作(zuo)有三种状(zhuang)态，1、截止，2、线性放大，3、饱和(he)(he)（基极(ji)电(dian)(dian)(dian)流继(ji)续增(zeng)加而(er)集电(dian)(dian)(dian)极(ji)电(dian)(dian)(dian)流不再增(zeng)加）。使晶体管(guan)(guan)只(zhi)工作(zuo)在1和(he)(he)3状(zhuang)态的(de)电(dian)(dian)(dian)路称之为开关(guan)电(dian)(dian)(dian)路，一般(ban)以晶体管(guan)(guan)截止，集电(dian)(dian)(dian)极(ji)不吸收电(dian)(dian)(dian)流表示(shi)关(guan)；以晶体管(guan)(guan)饱和(he)(he)，发射极(ji)和(he)(he)集电(dian)(dian)(dian)极(ji)之间的(de)电(dian)(dian)(dian)压(ya)差(cha)接(jie)近于Ov时(shi)表示(shi)开。

开(kai)关电(dian)路(lu)用于数字电(dian)路(lu)时(shi)，输(shu)出(chu)电(dian)位(wei)接(jie)近Ov时(shi)表示0，输(shu)出(chu)电(dian)位(wei)接(jie)近电(dian)源(yuan)电(dian)压(ya)时(shi)表示1。所以数字集成电(dian)路(lu)内鄯的(de)晶体管(guan)(guan)都工作在(zai)开(kai)关状态。场(chang)效应(ying)管(guan)(guan)按沟通分(fen)可分(fen)为(wei)N沟通和P沟道管(guan)(guan)（在(zai)符(fu)号图中(zhong)可看到中(zhong)间的(de)箭头(tou)方向不一样）。

按(an)材料分(fen)可(ke)(ke)分(fen)为(wei)(wei)(wei)结型(xing)(xing)管(guan)(guan)和(he)绝缘栅型(xing)(xing)管(guan)(guan)，绝缘栅型(xing)(xing)又分(fen)为(wei)(wei)(wei)耗尽型(xing)(xing)和(he)增(zeng)强(qiang)型(xing)(xing)，一般主板(ban)上大多(duo)(duo)是(shi)绝缘栅型(xing)(xing)管(guan)(guan)简称(cheng)MOS管(guan)(guan)，并且大多(duo)(duo)采用(yong)(yong)增(zeng)强(qiang)型(xing)(xing)的(de)N沟(gou)道，其次是(shi)增(zeng)强(qiang)型(xing)(xing)的(de)P沟(gou)通，结型(xing)(xing)蓄(xu)和(he)耗尽型(xing)(xing)蓄(xu)几乎不(bu)用(yong)(yong)。场(chang)(chang)(chang)效(xiao)应(ying)昌体管(guan)(guan)(FieldEffectTransistor缩(suo)写(FET))简称(cheng)场(chang)(chang)(chang)效(xiao)应(ying)管(guan)(guan)由(you)多(duo)(duo)数(shu)(shu)载流(liu)(liu)子(zi)(zi)(zi)参与导(dao)(dao)电，也称(cheng)为(wei)(wei)(wei)单极(ji)型(xing)(xing)晶体管(guan)(guan)它属于电压(ya)控制型(xing)(xing)半导(dao)(dao)体器件(jian)场(chang)(chang)(chang)效(xiao)应(ying)管(guan)(guan)是(shi)利用(yong)(yong)多(duo)(duo)数(shu)(shu)载流(liu)(liu)子(zi)(zi)(zi)导(dao)(dao)电，所(suo)以(yi)称(cheng)之为(wei)(wei)(wei)单极(ji)型(xing)(xing)器件(jian)，而晶体管(guan)(guan)是(shi)即有多(duo)(duo)数(shu)(shu)载流(liu)(liu)子(zi)(zi)(zi)，也利用(yong)(yong)少数(shu)(shu)载流(liu)(liu)子(zi)(zi)(zi)导(dao)(dao)电，被称(cheng)之为(wei)(wei)(wei)双极(ji)型(xing)(xing)器件(jian)有些(xie)场(chang)(chang)(chang)效(xiao)应(ying)管(guan)(guan)的(de)源极(ji)和(he)漏极(ji)可(ke)(ke)以(yi)互(hu)换使用(yong)(yong)，棚(peng)压(ya)也可(ke)(ke)正可(ke)(ke)负，灵活性比晶体管(guan)(guan)好。

什么叫场效应管？

FET是(shi)Field-Effect-Transistor的缩(suo)写，即为场效应(ying)晶体(ti)管。一(yi)般的晶体(ti)管是(shi)由(you)(you)两种极(ji)性(xing)(xing)的载(zai)(zai)(zai)流(liu)子(zi)，即多数(shu)载(zai)(zai)(zai)流(liu)子(zi)和反(fan)(fan)极(ji)性(xing)(xing)的少数(shu)载(zai)(zai)(zai)流(liu)子(zi)参与(yu)导电，因此称为双极(ji)型(xing)晶体(ti)管，而(er)FET仅是(shi)由(you)(you)多数(shu)载(zai)(zai)(zai)流(liu)子(zi)参与(yu)导电，它与(yu)双极(ji)型(xing)相反(fan)(fan)，也称为单极(ji)型(xing)晶体(ti)管。FET应(ying)用(yong)(yong)范(fan)围很(hen)广，但不能说现在普(pu)及(ji)的双极(ji)型(xing)晶体(ti)管都可以用(yong)(yong)FET替代。然而(er)，由(you)(you)于FET的特性(xing)(xing)与(yu)双极(ji)型(xing)晶体(ti)管的特性(xing)(xing)完全不同，能构成技术性(xing)(xing)能非常好的电路。

三极管的导通条件

三(san)极(ji)管(guan)(guan)的(de)(de)导通(tong)条件是(shi)：发射(she)结(jie)(jie)(jie)加(jia)正向电(dian)(dian)压，集(ji)电(dian)(dian)结(jie)(jie)(jie)加(jia)反(fan)(fan)(fan)向电(dian)(dian)压。发射(she)结(jie)(jie)(jie)加(jia)正向电(dian)(dian)压，就是(shi)基(ji)极(ji)和发射(she)极(ji)之间所加(jia)电(dian)(dian)压Ube，是(shi)按箭头的(de)(de)指向加(jia)PN结(jie)(jie)(jie)的(de)(de)电(dian)(dian)压，即硅管(guan)(guan)加(jia)07Vj锗(zhe)管(guan)(guan)加(jia)口2V。集(ji)电(dian)(dian)结(jie)(jie)(jie)加(jia)反(fan)(fan)(fan)向电(dian)(dian)压，就是(shi)在集(ji)电(dian)(dian)结(jie)(jie)(jie)的(de)(de)PN结(jie)(jie)(jie)上(shang)加(jia)反(fan)(fan)(fan)压Ube才能把基(ji)区的(de)(de)电(dian)(dian)荷吸引过(guo)来。此电(dian)(dian)压较高，在手机中(zhong)一(yi)般为1-3.6V。

PNP三极管(guan)的导通电压是(shi)Ue>Ub>Uc；NPN三极管(guan)为Uc>Ub>Ue。

对(dui)于NPN型管子．是(shi)C点电位(wei)(wei)(wei)>B点电位(wei)(wei)(wei)>E点电位(wei)(wei)(wei)．对(dui)PNP型管子．是(shi)E点电位(wei)(wei)(wei)>B点电位(wei)(wei)(wei)>C点电位(wei)(wei)(wei)．这是(shi)放大的条件要想使管子饱和导通．则(ze)应该(NPN型)Ub>Ue．Ub>Uc．(PNP型)Ue>Ub．Uc>Ub

场效应管开关工作状态

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