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N沟(gou)道MOS管(guan)(guan)工(gong)作原理等详解-N沟(gou)道MOS管(guan)(guan)30V选型(xing)、参(can)数及封(feng)装大全-KIA MOS管(guan)(guan)

信(xin)息(xi)来源(yuan):本(ben)站(zhan) 日期:2018-07-18 

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N沟道MOS管介绍

场效应(ying)(ying)管(guan)导通(tong)与截止由栅源(yuan)电压来操控,关于(yu)增(zeng)强(qiang)场效应(ying)(ying)管(guan)方面来说,N沟道的管(guan)子加(jia)正向电压即(ji)导通(tong),P沟道的管(guan)子则加(jia)反向电压。一般2V~4V就OK了(le)。可是(shi),场效应(ying)(ying)管(guan)分为(wei)增(zeng)强(qiang)型和耗(hao)尽(jin)型,增(zeng)强(qiang)型的管(guan)子是(shi)必(bi)须需(xu)求加(jia)电压才干导通(tong)的,而耗(hao)尽(jin)型管(guan)子本来就处于(yu)导通(tong)状(zhuang)况,加(jia)栅源(yuan)电压是(shi)为(wei)了(le)使其截止。

开(kai)(kai)关只有两种状(zhuang)况(kuang)通和断,三(san)极管和场效应(ying)管作(zuo)业有三(san)种状(zhuang)况(kuang),1.截(jie)止,2.线(xian)性扩大,3.饱满(基极电(dian)(dian)(dian)流持续添(tian)加(jia)而集电(dian)(dian)(dian)极电(dian)(dian)(dian)流不(bu)再添(tian)加(jia))。使晶体(ti)管只作(zuo)业在(zai)1和3状(zhuang)况(kuang)的(de)电(dian)(dian)(dian)路称之为开(kai)(kai)关电(dian)(dian)(dian)路,一般以晶体(ti)管截(jie)止,集电(dian)(dian)(dian)极不(bu)吸收电(dian)(dian)(dian)流表(biao)(biao)明(ming)开(kai)(kai)关;以晶体(ti)管饱满,发(fa)射极和集电(dian)(dian)(dian)极之间的(de)电(dian)(dian)(dian)压差挨(ai)(ai)近于(yu)0V时表(biao)(biao)明(ming)开(kai)(kai)。开(kai)(kai)关电(dian)(dian)(dian)路用(yong)于(yu)数字电(dian)(dian)(dian)路时,输出电(dian)(dian)(dian)位(wei)挨(ai)(ai)近0V时表(biao)(biao)明(ming)0,输出电(dian)(dian)(dian)位(wei)挨(ai)(ai)近电(dian)(dian)(dian)源电(dian)(dian)(dian)压时表(biao)(biao)明(ming)1。所以数字集成电(dian)(dian)(dian)路内(nei)部的(de)晶体(ti)管都工作(zuo)在(zai)开(kai)(kai)关状(zhuang)况(kuang)。

场效应管按沟(gou)(gou)道(dao)分可分为(wei)N沟(gou)(gou)道(dao)和P沟(gou)(gou)道(dao)管(在(zai)符号图中可看到中间(jian)的(de)箭头(tou)方向不一样)。



N沟道MOS管30V

按资(zi)料可分为结型(xing)(xing)管(guan)和(he)绝(jue)缘栅型(xing)(xing)管(guan),绝(jue)缘栅型(xing)(xing)又分为耗尽型(xing)(xing)和(he)增强(qiang)型(xing)(xing),一(yi)般主板(ban)上大(da)多(duo)是(shi)绝(jue)缘栅型(xing)(xing)管(guan)简称(cheng)(cheng)MOS管(guan),而且大(da)多(duo)选用增强(qiang)型(xing)(xing)的(de)N沟道,其次是(shi)增强(qiang)型(xing)(xing)的(de)P沟道,结型(xing)(xing)管(guan)和(he)耗尽型(xing)(xing)管(guan)简直不用。    场(chang)效(xiao)(xiao)应晶(jing)(jing)体(ti)(ti)管(guan)简称(cheng)(cheng)场(chang)效(xiao)(xiao)应管(guan).由(you)大(da)都载(zai)流子参加导(dao)电,也称(cheng)(cheng)为单(dan)极型(xing)(xing)晶(jing)(jing)体(ti)(ti)管(guan).它归于电压(ya)操(cao)控型(xing)(xing)半导(dao)体(ti)(ti)器材.   场(chang)效(xiao)(xiao)应管(guan)是(shi)使用大(da)都载(zai)流子导(dao)电,所以称(cheng)(cheng)之为单(dan)极型(xing)(xing)器材,而晶(jing)(jing)体(ti)(ti)管(guan)是(shi)即有大(da)都载(zai)流子,也使用少量载(zai)流子导(dao)电,被称(cheng)(cheng)之为双极型(xing)(xing)器材.    有些场(chang)效(xiao)(xiao)应管(guan)的(de)源(yuan)极和(he)漏极能够交换使用,栅压(ya)也可正可负,灵活(huo)性比晶(jing)(jing)体(ti)(ti)管(guan)好。


N沟道MOS管30V

Part Numbe

IDA

VDSSv

内(nei)阻(小)

内阻(大)

ciss

Package

pF

KIA100N03A

90

30

0.005

0.0041

2200

TO-263

KIA2803A

150

30

0.003

0.0022

4050

TO-263

KNB2803B

150

30

0.0028

0.0021

5060

TO-263

KIA30N03B

30

30

0.018

0.015

572

TO-251

KIA50N30A

50

30

0.009

0.0065

1180

TO-251

KIA100N03A

90

30

0.004

0.0031

2200

TO-251

KIA30N03B

30

30

0.018

0.015

572

TO-252

KIA50N03A

50

30

0.009

0.0065

1180

TO-252

KND9103A

40

30

0.0105

0.0085

910

TO-252

KIA100N03A

90

30

0.004

0.0031

2200

TO-252

KND3103A

110

30

0.0026

0.0019

3650

TO-252

KND2803

150

30

0.0028

0.0021

5060

TO-252

KIA50N03A0

50

30

0.09

0.0065

1180

TO-220

KIA100N03A

90

30

0.005

0.0043

2200

TO-220

KIA2803A

150

30

0.003

0.0022

4050

TO-220

KNY3103A

110

30

0.0026

0.0019

3650

PDFN*6


Part Numbe

IDA

BVDSSV

RDSON)(Ω)

Package

KIA2304

2.5

30

0.055

SOT-23

KIA2306

3.5

30

0.057

SOT-23

KIA3400

4.8

30

0.035

SOT-23

KIA3402

4

30

0.07

SOT-23

KIA4603A

7

30

0.0145

SOP-8



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