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选(xuan)场(chang)效(xiao)应管型号(hao)知识

准确(que)挑选MOS管(guan)是很关(guan)紧的一个环节，MOS管(guan)挑选非常不(bu)好可能影响(xiang)到整个儿电路的速率(lv)和成本，理解不(bu)一样的MOS管(guan)器件的微小区(qu)别及不(bu)一样开(kai)关(guan)电路中(zhong)的应力能够帮忙工程师防止好些个问题，下边我们来学习下MOS管(guan)的准确(que)的挑选办法。

第(di)1步：选用(yong)N沟(gou)道仍然P沟(gou)道

为预设挑选准确部(bu)件(jian)的第1步(bu)是表决认为合适而使(shi)用(yong)(yong)(yong)N沟(gou)(gou)道仍然(ran)P沟(gou)(gou)道MOS管(guan)。在典(dian)型的功(gong)率应(ying)用(yong)(yong)(yong)中，当一个(ge)(ge)MOS管(guan)接地(di)，而负载连署(shu)到(dao)干线(xian)间电压(ya)上时(shi)，该MOS管(guan)就(jiu)(jiu)构成(cheng)了低(di)压(ya)侧(ce)(ce)开关(guan)。在低(di)压(ya)侧(ce)(ce)开关(guan)中，应(ying)认为合适而使(shi)用(yong)(yong)(yong)N沟(gou)(gou)道MOS管(guan)，这是出于(yu)对关(guan)闭或导(dao)通部(bu)件(jian)所需(xu)电压(ya)的思索问题。当MOS管(guan)连署(shu)到(dao)总(zong)线(xian)及负载接地(di)时(shi)，就(jiu)(jiu)要用(yong)(yong)(yong)高压(ya)侧(ce)(ce)开关(guan)。通例会(hui)在这个(ge)(ge)拓扑中认为合适而使(shi)用(yong)(yong)(yong)P沟(gou)(gou)道MOS管(guan)，这也是出于(yu)对电压(ya)驱(qu)动(dong)的思索问题。

要挑选适应(ying)应(ying)用(yong)(yong)的(de)(de)(de)部(bu)(bu)件，务(wu)必(bi)确认驱动(dong)部(bu)(bu)件所(suo)需的(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)，以及(ji)在预(yu)设中最(zui)(zui)简易执行的(de)(de)(de)办法。下一步是(shi)确认所(suo)需的(de)(de)(de)定(ding)额(e)(e)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)，还是(shi)部(bu)(bu)件所(suo)能(neng)(neng)(neng)承(cheng)担(dan)的(de)(de)(de)最(zui)(zui)大(da)(da)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)。定(ding)额(e)(e)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)越大(da)(da)，部(bu)(bu)件的(de)(de)(de)成(cheng)本就越高(gao)。依据实践(jian)经验，定(ding)额(e)(e)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)应(ying)该(gai)大(da)(da)于(yu)干线间(jian)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)或(huo)总线间(jian)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)。这么能(neng)(neng)(neng)力(li)供(gong)给足(zu)够的(de)(de)(de)尽力(li)照顾(gu)，使MOS管不会(hui)失(shi)(shi)去效(xiao)(xiao)力(li)。就挑选MOS管而言，务(wu)必(bi)确认漏极至(zhi)源极间(jian)有(you)(you)可能(neng)(neng)(neng)承(cheng)担(dan)的(de)(de)(de)最(zui)(zui)大(da)(da)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)，即最(zui)(zui)大(da)(da)VDS.晓得MOS管能(neng)(neng)(neng)承(cheng)担(dan)的(de)(de)(de)最(zui)(zui)大(da)(da)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)会(hui)随温(wen)度而变动(dong)这点(dian)非(fei)常(chang)关(guan)紧。预(yu)设担(dan)任职务(wu)的(de)(de)(de)人务(wu)必(bi)在整个(ge)儿办公温(wen)度范(fan)围(wei)内测试电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)的(de)(de)(de)变动(dong)范(fan)围(wei)。定(ding)额(e)(e)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)务(wu)必(bi)有(you)(you)足(zu)够的(de)(de)(de)余量遮盖这个(ge)变动(dong)范(fan)围(wei)，保证电(dian)(dian)(dian)(dian)(dian)路不会(hui)失(shi)(shi)去效(xiao)(xiao)力(li)。预(yu)设工程师(shi)需求思索问题的(de)(de)(de)其它安全因素涵盖由开关(guan)电(dian)(dian)(dian)(dian)(dian)子设施(shi)（如(ru)电(dian)(dian)(dian)(dian)(dian)机或(huo)变压(ya)(ya)(ya)器）诱(you)发的(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)瞬变。不一样应(ying)用(yong)(yong)的(de)(de)(de)定(ding)额(e)(e)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)(ya)也(ye)有(you)(you)所(suo)不一样；一般，便携式设施(shi)为20V、FPGA电(dian)(dian)(dian)(dian)(dian)源为20~30V、85~220VAC应(ying)用(yong)(yong)为450~600V.

第2步：确认热(re)要求(qiu)

挑选(xuan)MOS管(guan)的(de)下一(yi)步是计算系统(tong)的(de)散热要求(qiu)。预设担(dan)任职务的(de)人(ren)务必思(si)索(suo)问题两(liang)种不(bu)一(yi)样的(de)事(shi)情(qing)状(zhuang)况(kuang)，即(ji)最(zui)坏(huai)事(shi)情(qing)状(zhuang)况(kuang)和真实事(shi)情(qing)状(zhuang)况(kuang)。提(ti)议认为合适(shi)而使用针(zhen)对最(zui)坏(huai)事(shi)情(qing)状(zhuang)况(kuang)的(de)计算最(zui)后结(jie)(jie)果(guo)，因此最(zui)后结(jie)(jie)果(guo)供给(ji)更大(da)的(de)安全(quan)余量(liang)，能保证系统(tong)不(bu)会失(shi)去效力。在MOS管(guan)的(de)资料表(biao)上还有一(yi)点需求(qiu)注(zhu)意(yi)的(de)勘(kan)测数值；譬如封(feng)装部件的(de)半导体结(jie)(jie)与背景之(zhi)间(jian)的(de)热阻，以及最(zui)大(da)的(de)结(jie)(jie)温(wen)。

部件(jian)的(de)(de)结(jie)温等(deng)于(yu)最(zui)大背景(jing)温度加上热(re)(re)阻(zu)与功率耗(hao)散的(de)(de)乘积（结(jie)温=最(zui)大背景(jing)温度+[热(re)(re)阻(zu)×功率耗(hao)散]）。依据这个方(fang)程(cheng)可(ke)解出系统(tong)的(de)(de)最(zui)大功率耗(hao)散，即按定义对等(deng)于(yu)I2×RDS（ON）。因(yin)(yin)为预(yu)设(she)担任职(zhi)务的(de)(de)人(ren)(ren)已(yi)确(que)认(ren)即将经(jing)过部件(jian)的(de)(de)最(zui)大电流，因(yin)(yin)为这个可(ke)以(yi)计算(suan)出不(bu)一样(yang)温度下的(de)(de)RDS（ON）。值当注意的(de)(de)是(shi)，在(zai)处置(zhi)简单热(re)(re)板(ban)型时，预(yu)设(she)担任职(zhi)务的(de)(de)人(ren)(ren)还务必(bi)思索问(wen)题(ti)半(ban)导体结(jie)/部件(jian)外壳及外壳/背景(jing)的(de)(de)热(re)(re)容量(liang)量(liang)；即要求印刷电路板(ban)和封装不(bu)会迅即升温。

雪崩(beng)(beng)(beng)击穿是(shi)(shi)指半导体(ti)部(bu)(bu)件(jian)上的(de)逆向电(dian)压超过最大值，并(bing)形(xing)成强(qiang)电(dian)场(chang)使部(bu)(bu)件(jian)内电(dian)流(liu)增加。该电(dian)流(liu)将耗散功率(lv)，使部(bu)(bu)件(jian)的(de)温度升高(gao)，并(bing)且可(ke)能(neng)毁坏部(bu)(bu)件(jian)。半导体(ti)企业都会(hui)对部(bu)(bu)件(jian)施(shi)行雪崩(beng)(beng)(beng)测试，计算其雪崩(beng)(beng)(beng)电(dian)压，或(huo)对部(bu)(bu)件(jian)的(de)稳健(jian)性(xing)施(shi)行测试。计算定额雪崩(beng)(beng)(beng)电(dian)压有两种办(ban)法(fa)；一(yi)是(shi)(shi)计数法(fa)，另一(yi)是(shi)(shi)热计算。而热计算由(you)于(yu)较为(wei)实(shi)用(yong)而获得广泛认为(wei)合适而使用(yong)。除计算外，技术对雪崩(beng)(beng)(beng)效应也有非常大影响(xiang)。例如(ru)，晶片(pian)尺寸的(de)增加会(hui)增长抗雪崩(beng)(beng)(beng)有经验，最后增长部(bu)(bu)件(jian)的(de)稳健(jian)性(xing)。对最后用(yong)户而言，这意味着要(yao)在系(xi)统(tong)中认为(wei)合适而使用(yong)更大的(de)封装(zhuang)件(jian)。

第3步：表(biao)决开关性能

挑选MOS管的(de)最终一步是表决(jue)MOS管的(de)开关性能。影响开关性能的(de)参(can)变量有(you)众多，但最关紧的(de)是栅极(ji)/漏极(ji)、栅极(ji)/

源极及(ji)漏极/源极电(dian)容。这(zhei)些个电(dian)容会在部(bu)件中(zhong)萌(meng)生(sheng)开(kai)(kai)(kai)关(guan)(guan)伤(shang)耗(hao)，由于在每每开(kai)(kai)(kai)关(guan)(guan)时都要对他们(men)充电(dian)。MOS管的(de)(de)(de)开(kai)(kai)(kai)关(guan)(guan)速度(du)因为(wei)这(zhei)个被减低，部(bu)件速率(lv)也减退。为(wei)计(ji)算开(kai)(kai)(kai)关(guan)(guan)过(guo)(guo)程中(zhong)部(bu)件的(de)(de)(de)总(zong)伤(shang)耗(hao)，预设担任职务的(de)(de)(de)人务必计(ji)算开(kai)(kai)(kai)经过(guo)(guo)程中(zhong)的(de)(de)(de)伤(shang)耗(hao)（Eon）和关(guan)(guan)闭过(guo)(guo)程中(zhong)的(de)(de)(de)伤(shang)耗(hao)（Eoff）。MOSFET开(kai)(kai)(kai)关(guan)(guan)的(de)(de)(de)总(zong)功率(lv)可(ke)用如(ru)下所述方程表现：Psw=（Eon+Eoff）×开(kai)(kai)(kai)关(guan)(guan)频率(lv)。而栅极电(dian)荷（Qgd）对开(kai)(kai)(kai)关(guan)(guan)性(xing)能的(de)(de)(de)影(ying)响最(zui)大。

第4步(bu)：确认(ren)定额电流

第(di)4步是挑选(xuan)MOS管的(de)(de)(de)定(ding)(ding)额(e)(e)电(dian)(dian)(dian)(dian)流(liu)。视(shi)电(dian)(dian)(dian)(dian)路(lu)结构而定(ding)(ding)，该(gai)定(ding)(ding)额(e)(e)电(dian)(dian)(dian)(dian)流(liu)应是负载在(zai)全部事情(qing)(qing)状(zhuang)况下(xia)(xia)能够承担(dan)的(de)(de)(de)最(zui)大电(dian)(dian)(dian)(dian)流(liu)。与电(dian)(dian)(dian)(dian)压的(de)(de)(de)事情(qing)(qing)状(zhuang)况相仿，预设担(dan)任职(zhi)务的(de)(de)(de)人务必保证所(suo)选(xuan)的(de)(de)(de)MOS管能承担(dan)这(zhei)个(ge)定(ding)(ding)额(e)(e)电(dian)(dian)(dian)(dian)流(liu)，纵然(ran)在(zai)系统萌生尖峰(feng)电(dian)(dian)(dian)(dian)流(liu)时(shi)。两个(ge)思索问题的(de)(de)(de)电(dian)(dian)(dian)(dian)流(liu)事情(qing)(qing)状(zhuang)况是蝉(chan)(chan)联(lian)标准样式(shi)和电(dian)(dian)(dian)(dian)子脉(mai)冲尖峰(feng)。在(zai)蝉(chan)(chan)联(lian)导通标准样式(shi)下(xia)(xia)，MOS管处于稳(wen)态，此(ci)时(shi)电(dian)(dian)(dian)(dian)流(liu)蝉(chan)(chan)联(lian)经过(guo)部件。电(dian)(dian)(dian)(dian)子脉(mai)冲尖峰(feng)是指有数量多电(dian)(dian)(dian)(dian)涌（或尖峰(feng)电(dian)(dian)(dian)(dian)流(liu)）流(liu)过(guo)部件。一朝(chao)确(que)认了这(zhei)些(xie)个(ge)条(tiao)件下(xia)(xia)的(de)(de)(de)最(zui)大电(dian)(dian)(dian)(dian)流(liu)，只需(xu)直(zhi)接(jie)挑选(xuan)能承担(dan)这(zhei)个(ge)最(zui)大电(dian)(dian)(dian)(dian)流(liu)的(de)(de)(de)部件便可(ke)。

选好(hao)定额电(dian)(dian)(dian)(dian)流(liu)后，还务必计算(suan)导(dao)通(tong)伤耗(hao)(hao)(hao)。在实际事情状况下，MOS管并(bing)不(bu)是理想的(de)(de)部件(jian)(jian)，由(you)于在导(dao)电(dian)(dian)(dian)(dian)过程中(zhong)会有电(dian)(dian)(dian)(dian)能伤耗(hao)(hao)(hao)，这称之为(wei)导(dao)通(tong)伤耗(hao)(hao)(hao)。MOS管在"导(dao)通(tong)"时就像一(yi)个可(ke)变(bian)(bian)电(dian)(dian)(dian)(dian)阻(zu)，由(you)部件(jian)(jian)的(de)(de)RDS（ON）所确认，并(bing)随温(wen)度而(er)(er)显(xian)著变(bian)(bian)动(dong)。部件(jian)(jian)的(de)(de)功率消耗(hao)(hao)(hao)损失(shi)可(ke)由(you)Iload2×RDS（ON）计算(suan)，因为(wei)导(dao)通(tong)电(dian)(dian)(dian)(dian)阻(zu)随温(wen)度变(bian)(bian)动(dong)，因为(wei)这个功率消耗(hao)(hao)(hao)损失(shi)也会随之按比(bi)例变(bian)(bian)动(dong)。对(dui)MOS管给予的(de)(de)电(dian)(dian)(dian)(dian)压VGS越(yue)(yue)高(gao)，RDS（ON）便(bian)会越(yue)(yue)小；与(yu)之相反RDS（ON）便(bian)会越(yue)(yue)高(gao)。对(dui)系统预设(she)(she)担任职(zhi)务的(de)(de)人来(lai)说，这就是决定于于系统电(dian)(dian)(dian)(dian)压而(er)(er)需求折(zhe)衷衡量(liang)的(de)(de)地方。对(dui)便(bian)携式预设(she)(she)来(lai)说，认为(wei)合适而(er)(er)使用较(jiao)低(di)的(de)(de)电(dian)(dian)(dian)(dian)压比(bi)较(jiao)容易(yi)（较(jiao)为(wei)存在广泛(fan)），而(er)(er)对(dui)于工业预设(she)(she)，可(ke)认为(wei)合适而(er)(er)使用较(jiao)高(gao)的(de)(de)电(dian)(dian)(dian)(dian)压。注(zhu)意RDS（ON）电(dian)(dian)(dian)(dian)阻(zu)会随着电(dian)(dian)(dian)(dian)流(liu)微(wei)小升涨。关于RDS（ON）电(dian)(dian)(dian)(dian)阻(zu)的(de)(de)各(ge)种(zhong)电(dian)(dian)(dian)(dian)气参变(bian)(bian)量(liang)变(bian)(bian)动(dong)可(ke)在制作商供给的(de)(de)技术资料(liao)表中(zhong)查到。

技(ji)(ji)(ji)术(shu)(shu)(shu)对(dui)部件的(de)特别的(de)性(xing)质(zhi)有(you)着意大(da)影(ying)响，由于(yu)有(you)点技(ji)(ji)(ji)术(shu)(shu)(shu)在(zai)增(zeng)长最(zui)大(da)VDS时往往会使(shi)RDS（ON）增(zeng)大(da)。对(dui)于(yu)这么(me)的(de)技(ji)(ji)(ji)术(shu)(shu)(shu)，假如计划减低VDS和RDS（ON），那末就得增(zeng)加晶片尺(chi)寸(cun)，因此增(zeng)加与(yu)之(zhi)组成(cheng)一套的(de)封装尺(chi)寸(cun)及有(you)关(guan)的(de)研(yan)发成(cheng)本。业界现(xian)存好几种(zhong)打算(suan)扼制(zhi)晶片尺(chi)寸(cun)增(zeng)加的(de)技(ji)(ji)(ji)术(shu)(shu)(shu)，那里(li)面最(zui)主(zhu)要的(de)是(shi)沟道和电荷均衡技(ji)(ji)(ji)术(shu)(shu)(shu)。

在沟道技术(shu)中，晶(jing)片中镶嵌了一个深沟，一般是为(wei)(wei)低(di)电(dian)压(ya)(ya)预留的(de)(de)，用(yong)(yong)于减低(di)导通(tong)电(dian)阻RDS（ON）。为(wei)(wei)了减损(sun)最大(da)VDS对(dui)RDS（ON）的(de)(de)影响，研(yan)发过(guo)程中认为(wei)(wei)合适而(er)使用(yong)(yong)了外延成长柱(zhu)/腐刻柱(zhu)工(gong)艺。例(li)如，飞(fei)兆(zhao)半导体研(yan)发了称为(wei)(wei)SupeRFET的(de)(de)技术(shu)，针对(dui)RDS（ON）的(de)(de)减低(di)而(er)增加(jia)了另外的(de)(de)制作步(bu)骤。这种(zhong)对(dui)RDS（ON）的(de)(de)关(guan)心注视非常关(guan)紧，由于当标(biao)准(zhun)MOSFET的(de)(de)击穿电(dian)压(ya)(ya)升(sheng)高时，RDS（ON）会随之(zhi)呈(cheng)指(zhi)(zhi)数级(ji)增加(jia)，况且造(zao)成晶(jing)片尺(chi)寸(cun)增大(da)。SuperFET工(gong)艺将(jiang)RDS（ON）与晶(jing)片尺(chi)寸(cun)间的(de)(de)指(zhi)(zhi)数关(guan)系成为(wei)(wei)了线性关(guan)系。这么，SuperFET部(bu)件便可在小(xiao)(xiao)晶(jing)片尺(chi)寸(cun)，甚至于在击穿电(dian)压(ya)(ya)达到600V的(de)(de)事情状况下(xia)，成功实(shi)现理(li)想的(de)(de)低(di)RDS（ON）。最后(hou)结果是晶(jing)片尺(chi)寸(cun)可减小(xiao)(xiao)达35%.而(er)对(dui)于最后(hou)用(yong)(yong)户(hu)来说，这意(yi)味着封装尺(chi)寸(cun)的(de)(de)大(da)幅减小(xiao)(xiao)。

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