KIA3510A是(shi)一(yi)款(kuan)逆(ni)(ni)变器专(zhuan)用MOS管，漏(lou)源击穿电(dian)压100V，漏(lou)极(ji)电(dian)流(liu)75A，RDS（ON）值(zhi)...KIA3510A是(shi)一(yi)款(kuan)逆(ni)(ni)变器专(zhuan)用MOS管，漏(lou)源击穿电(dian)压100V，漏(lou)极(ji)电(dian)流(liu)75A，RDS（ON）值(zhi)为(wei)9mΩ，低(di)导通电(dian)阻最(zui)大限度地(di)减少导通损耗，最(zui)小(xiao)化(hua)开(kai)关损耗；低(di)栅极(ji)电(dian)荷、100%雪崩...
KNX2910B采用先(xian)进(jin)的沟槽(cao)技(ji)术(shu)，漏(lou)源击穿(chuan)电(dian)(dian)压100V, 漏(lou)极(ji)电(dian)(dian)流(liu)130A ，提供优异(yi)的Rd...KNX2910B采用先(xian)进(jin)的沟槽(cao)技(ji)术(shu)，漏(lou)源击穿(chuan)电(dian)(dian)压100V, 漏(lou)极(ji)电(dian)(dian)流(liu)130A ，提供优异(yi)的Rdson，RDS（ON）值为9mΩ，超低(di)导通电(dian)(dian)阻，最大限度地减(jian)少(shao)导通损(sun)耗(hao)，最小化开关损(sun)耗(hao)；...
KNP2910A场(chang)效应管采(cai)用超高(gao)密(mi)度(du)电(dian)(dian)池(chi)设计，漏源击(ji)穿电(dian)(dian)压(ya)100V, 漏极电(dian)(dian)流130A ，RD...KNP2910A场(chang)效应管采(cai)用超高(gao)密(mi)度(du)电(dian)(dian)池(chi)设计，漏源击(ji)穿电(dian)(dian)压(ya)100V, 漏极电(dian)(dian)流130A ，RDS（ON）值为(wei)5mΩ，超低导(dao)通电(dian)(dian)阻，最(zui)大限度(du)地(di)减(jian)少(shao)导(dao)通损耗(hao)，最(zui)小化开关损耗(hao)；100%雪崩...
KNB2808A是(shi)一款10串(chuan)-16串(chuan)保护板专用(yong)MOS管，漏源击(ji)穿电(dian)压(ya)80V, 漏极电(dian)流(liu)150A ，R...KNB2808A是(shi)一款10串(chuan)-16串(chuan)保护板专用(yong)MOS管，漏源击(ji)穿电(dian)压(ya)80V, 漏极电(dian)流(liu)150A ，RDS（ON）值为4mΩ，极低RDS（ON）和优秀栅(zha)极电(dian)荷，最(zui)大(da)限度地减少导通损(sun)耗，最(zui)小(xiao)化开...
KIA35P10AD场效(xiao)应(ying)管采用先(xian)进的沟(gou)槽MOSFET技术，在电(dian)机(ji)控制和驱动(dong)、电(dian)池管理、U...KIA35P10AD场效(xiao)应(ying)管采用先(xian)进的沟(gou)槽MOSFET技术，在电(dian)机(ji)控制和驱动(dong)、电(dian)池管理、UPS不(bu)间(jian)断电(dian)源中(zhong)热销，漏源击穿(chuan)电(dian)压(ya)-100V, 漏极电(dian)流-35A ，RDS（ON）值(zhi)为32mΩ，提(ti)供...
KNB3308B是(shi)一款10-16串保(bao)护板(ban)(ban)专用MOS管(guan)，漏(lou)源击(ji)穿电压(ya)80V，漏(lou)极(ji)电流(liu)80A，RDS（...KNB3308B是(shi)一款10-16串保(bao)护板(ban)(ban)专用MOS管(guan)，漏(lou)源击(ji)穿电压(ya)80V，漏(lou)极(ji)电流(liu)80A，RDS（ON）值仅(jin)为7.2mΩ，低导通电阻最大限度(du)地减少导电损耗，最小化(hua)开关损耗，确保(bao)锂电池...
