KNX3208A场(chang)效应(ying)管(guan)可(ke)以(yi)代(dai)换(huan)055n08n型号应(ying)用于锂电池保(bao)护板、DCDC变换(huan)器(qi)、UPS、逆...KNX3208A场(chang)效应(ying)管(guan)可(ke)以(yi)代(dai)换(huan)055n08n型号应(ying)用于锂电池保(bao)护板、DCDC变换(huan)器(qi)、UPS、逆变器(qi)中；漏(lou)源击穿(chuan)电压(ya)85V，漏(lou)极电流100A，RDS(ON)，typ.=6.5mΩ@VGS=10V，电阻极低...
KNP1906B场(chang)效应(ying)管(guan)可(ke)以替代(dai)irfp3206型号应(ying)用(yong)在光伏(fu)逆变器(qi)、锂电(dian)池保(bao)护板中(zhong)，...KNP1906B场(chang)效应(ying)管(guan)可(ke)以替代(dai)irfp3206型号应(ying)用(yong)在光伏(fu)逆变器(qi)、锂电(dian)池保(bao)护板中(zhong)，漏源击穿电(dian)压(ya)60V，漏极电(dian)流230A，RDS（开）在VGS=10V时为2.7mΩ，低RDS最大限度地减...
KND3306B场(chang)效应管可(ke)以(yi)替代(dai)nce6080型号在无(wu)刷(shua)电(dian)(dian)(dian)机(ji)、锂电(dian)(dian)(dian)池保护板、逆变器(qi)(qi)领域应...KND3306B场(chang)效应管可(ke)以(yi)替代(dai)nce6080型号在无(wu)刷(shua)电(dian)(dian)(dian)机(ji)、锂电(dian)(dian)(dian)池保护板、逆变器(qi)(qi)领域应用，漏源(yuan)击穿电(dian)(dian)(dian)压68V，漏极电(dian)(dian)(dian)流80A，RDS(on)=7mΩ@VGS=10V，低导通电(dian)(dian)(dian)阻(zu)、高(gao)雪崩电(dian)(dian)(dian)流...
KNX2804A场(chang)效应管(guan)采用(yong)专有新(xin)型沟(gou)槽技术(shu)，漏源击穿电(dian)(dian)(dian)压(ya)40V，漏极电(dian)(dian)(dian)流150A，RDS（...KNX2804A场(chang)效应管(guan)采用(yong)专有新(xin)型沟(gou)槽技术(shu)，漏源击穿电(dian)(dian)(dian)压(ya)40V，漏极电(dian)(dian)(dian)流150A，RDS（ON）=3.0mΩ@VGS=10V，极低的导通电(dian)(dian)(dian)阻(zu)RDS，以及(ji)低栅极电(dian)(dian)(dian)荷最小化开(kai)关损耗、快(kuai)速恢(hui)复...
KND3404C场效(xiao)应管采用先进(jin)的(de)(de)高(gao)单元密度沟(gou)槽技术，可以替代80n04型(xing)号(hao)应用在(zai)(zai)锂电(dian)...KND3404C场效(xiao)应管采用先进(jin)的(de)(de)高(gao)单元密度沟(gou)槽技术，可以替代80n04型(xing)号(hao)应用在(zai)(zai)锂电(dian)池保护(hu)板、同步降压转(zhuan)换器(qi)中；漏源击穿(chuan)电(dian)压40V，漏极电(dian)流80A，低导通电(dian)阻RDS（ON）=...
KIA100N03场效(xiao)应管采(cai)(cai)用(yong)先进平面条纹(wen)DMOS技术生产，漏源击穿电(dian)压30V，漏极电(dian)流为...KIA100N03场效(xiao)应管采(cai)(cai)用(yong)先进平面条纹(wen)DMOS技术生产，漏源击穿电(dian)压30V，漏极电(dian)流为90A，RDS(on)=3.3mΩ@VGS=10V，最小化通态电(dian)阻，提高效(xiao)率，在雪崩(beng)和整(zheng)流模式下能(neng)承...
