KIA50N03A场效应(ying)管(guan)采用(yong)(yong)先进的(de)沟(gou)槽工(gong)艺技(ji)术(shu),可以替(ti)代nce3050k型(xing)号应(ying)用(yong)(yong)在锂(li)电(dian)(dian)池...KIA50N03A场效应(ying)管(guan)采用(yong)(yong)先进的(de)沟(gou)槽工(gong)艺技(ji)术(shu),可以替(ti)代nce3050k型(xing)号应(ying)用(yong)(yong)在锂(li)电(dian)(dian)池保护板、LED中,漏源击(ji)穿电(dian)(dian)压30V、漏极电(dian)(dian)流50A,RDS(ON)=6.5mΩ,VGS@10V,Ids@30A,R...
KIA6N70H场(chang)效(xiao)应(ying)管(guan)可以替代(dai)6n70型号应(ying)用(yong)在高效(xiao)开(kai)关电(dian)源(yuan)、LED驱动(dong)、电(dian)机(ji)驱动(dong)中(zhong),...KIA6N70H场(chang)效(xiao)应(ying)管(guan)可以替代(dai)6n70型号应(ying)用(yong)在高效(xiao)开(kai)关电(dian)源(yuan)、LED驱动(dong)、电(dian)机(ji)驱动(dong)中(zhong),漏源(yuan)击(ji)穿电(dian)压700V、漏极电(dian)流5.8A,RDS(on)typ为(wei)1.8Ω@VGS=10V,最大限度(du)地减少导通电(dian)...
KIA10N65H场效应管(guan)漏(lou)源击穿电(dian)压650V,漏(lou)极(ji)电(dian)流10A,RDS(on)=0.65Ω @ VGS=10V,...KIA10N65H场效应管(guan)漏(lou)源击穿电(dian)压650V,漏(lou)极(ji)电(dian)流10A,RDS(on)=0.65Ω @ VGS=10V,低导通(tong)电(dian)阻,低栅极(ji)电(dian)荷(典型48nC),有(you)效降低开(kai)关损耗,提升效率(lv);具有(you)快(kuai)速交换功能...
KNX4665B场(chang)效应(ying)管可(ke)以替代7n65型号(hao)应(ying)用在(zai)DCDC转换器(qi)、电源(yuan)适(shi)配器(qi)、镇流器(qi)、LED...KNX4665B场(chang)效应(ying)管可(ke)以替代7n65型号(hao)应(ying)用在(zai)DCDC转换器(qi)、电源(yuan)适(shi)配器(qi)、镇流器(qi)、LED驱动中,漏(lou)源(yuan)击穿电压(ya)650V,漏(lou)极电流7A,能够承受较大的电压(ya)压(ya)力及良好的导电性能;...
KIA4365A场效应(ying)管可以替代4n65型(xing)(xing)号应(ying)用在高(gao)频(pin)开(kai)关电(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)、LED驱(qu)动(dong)和不间断(duan)电(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(...KIA4365A场效应(ying)管可以替代4n65型(xing)(xing)号应(ying)用在高(gao)频(pin)开(kai)关电(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)、LED驱(qu)动(dong)和不间断(duan)电(dian)(dian)(dian)(dian)源(yuan)(yuan)(yuan)(UPS)中(zhong),漏(lou)(lou)源(yuan)(yuan)(yuan)击穿电(dian)(dian)(dian)(dian)压为650V,漏(lou)(lou)极电(dian)(dian)(dian)(dian)流4A,RDS(ON)典型(xing)(xing)值(zhi)为2.0Ω,低导通电(dian)(dian)(dian)(dian)阻,减...
KIA4N65H场效应(ying)管漏极(ji)电(dian)(dian)流4A,漏源击穿电(dian)(dian)压为650V,RDS(开)=2.5Ω @ VGS=10V...KIA4N65H场效应(ying)管漏极(ji)电(dian)(dian)流4A,漏源击穿电(dian)(dian)压为650V,RDS(开)=2.5Ω @ VGS=10V,最大限度减少导通电(dian)(dian)阻;低栅(zha)极(ji)电(dian)(dian)荷,典型值为16nC,高(gao)坚固(gu)性(xing)、100%雪崩测(ce)试、改进...