cmos接(jie)口电(dian)(dian)路(lu)(lu)-CMOS与放大器的接(jie)口电(dian)(dian)路(lu)(lu)分(fen)析-KIA MOS管?
信息来(lai)源(yuan)：本站 日期：2017-07-11
图7-6(a)、(b)中三极管的(de)(de)(de)(de)集电(dian)(dian)(dian)(dian)极负载为继电(dian)(dian)(dian)(dian)器(qi)KA线圈。其工作(zuo)电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)为lOOmA。若(ruo)晶体(ti)管的(de)(de)(de)(de)β=25，则(ze)需求4mA的(de)(de)(de)(de)基极电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)。这(zhei)对与非(fei)门(men)(men)来(lai)说是个拉电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)负载。如(ru)与非(fei)门(men)(men)不能提(ti)供这(zhei)样大的(de)(de)(de)(de)拉电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)，可采用(yong)图7-6(b)所示的(de)(de)(de)(de)电(dian)(dian)(dian)(dian)路。由电(dian)(dian)(dian)(dian)阻Ri、二极管VD1和稳压管Vs组(zu)成变换(huan)电(dian)(dian)(dian)(dian)路。当与非(fei)门(men)(men)输出高电(dian)(dian)(dian)(dian)平(ping)常(chang)，VD1截(jie)(jie)止。VS击穿，晶体(ti)管VT的(de)(de)(de)(de)基极电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)由+15V电(dian)(dian)(dian)(dian)源经(jing)(jing)R1、VS和V1的(de)(de)(de)(de)发射结来(lai)提(ti)供，VT导通，继电(dian)(dian)(dian)(dian)器(qi)KA吸(xi)合。当与非(fei)门(men)(men)输出低(di)电(dian)(dian)(dian)(dian)1平(ping)常(chang)，灌电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)经(jing)(jing)+15V电(dian)(dian)(dian)(dian)源经(jing)(jing)R1、VDi流(liu)(liu)(liu)入与非(fei)门(men)(men)，这(zhei)个电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)只要几(ji)毫安，这(zhei)样可防止冈(gang)拉电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)过(guo)大而惹起输出高电(dian)(dian)(dian)(dian)平(ping)的(de)(de)(de)(de)降(jiang)落。这(zhei)时(shi)VS截(jie)(jie)止，VT截(jie)(jie)止，KA释放(fang)。
电阻R1、R2可(ke)按下式选取：
CMOS反相器 CMOS集成门(men)电路(lu) CMOS电(dian)路
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