场(chang)效应(ying)(ying)管引见(jian)篇(pian) 场(chang)效应(ying)(ying)结晶体(ti)管（Field Effect Transistor缩(suo)写（FET））职称...场(chang)效应(ying)(ying)管引见(jian)篇(pian) 场(chang)效应(ying)(ying)结晶体(ti)管（Field Effect Transistor缩(suo)写（FET））职称场(chang)效应(ying)(ying)管。由(you)少数(shu)载流子参加导(dao)热，也称为多(duo)极(ji)型(xing)结晶体(ti)管。它归(gui)于电压掌握型(xing)半超(chao)导(dao)体(ti)...
来自韩(han)国科学技术学院（Korea Advanced Institute of Science and Technology，...来自韩(han)国科学技术学院（Korea Advanced Institute of Science and Technology，KAIST）的团队研(yan)发了一种用(yong)于场效应(ying)晶体(ti)管(guan)的高性能超(chao)薄聚合绝缘(yuan)体(ti)。
KCX3650A场效应管漏(lou)源(yuan)电压500V，漏(lou)极(ji)电流60A，导通(tong)电阻(zu)RDS（ON）50mΩ，采(cai)用(yong)先(xian)...KCX3650A场效应管漏(lou)源(yuan)电压500V，漏(lou)极(ji)电流60A，导通(tong)电阻(zu)RDS（ON）50mΩ，采(cai)用(yong)先(xian)进的端接方案来提供增强的电压阻(zu)断能(neng)力，而不(bu)会(hui)随着(zhe)时(shi)间的推移降低性能(neng)；坚固的高压...
KIA65R300FS场效(xiao)(xiao)应(ying)管漏(lou)(lou)(lou)源电(dian)(dian)压650V，漏(lou)(lou)(lou)极电(dian)(dian)流15A，导通电(dian)(dian)阻RDS（ON）0.27Ω，低(di)...KIA65R300FS场效(xiao)(xiao)应(ying)管漏(lou)(lou)(lou)源电(dian)(dian)压650V，漏(lou)(lou)(lou)极电(dian)(dian)流15A，导通电(dian)(dian)阻RDS（ON）0.27Ω，低(di)栅(zha)极电(dian)(dian)荷（典(dian)型(xing)值43nC），高(gao)坚固(gu)性、快速切(qie)换确保电(dian)(dian)路高(gao)效(xiao)(xiao)稳定(ding)，100%雪崩(beng)测(ce)试、改进...
KIA65R190FS场(chang)效应管漏(lou)源(yuan)电(dian)(dian)压650V，漏(lou)极电(dian)(dian)流20A，导通电(dian)(dian)阻(zu)RDS（ON）0.16Ω，低...KIA65R190FS场(chang)效应管漏(lou)源(yuan)电(dian)(dian)压650V，漏(lou)极电(dian)(dian)流20A，导通电(dian)(dian)阻(zu)RDS（ON）0.16Ω，低栅极电(dian)(dian)荷（典型值70nC），具有高坚(jian)固性、快速(su)切(qie)换、100%雪崩测试、改进的(de)dv/dt功能(neng)增(zeng)...
KIA12N65H场(chang)效应管(guan)漏源(yuan)电(dian)(dian)(dian)(dian)压(ya)(ya)650V，漏极电(dian)(dian)(dian)(dian)流12A，导(dao)通电(dian)(dian)(dian)(dian)阻RDS（ON）0.63Ω，高(gao)效...KIA12N65H场(chang)效应管(guan)漏源(yuan)电(dian)(dian)(dian)(dian)压(ya)(ya)650V，漏极电(dian)(dian)(dian)(dian)流12A，导(dao)通电(dian)(dian)(dian)(dian)阻RDS（ON）0.63Ω，高(gao)效低耗(hao)；低栅(zha)极电(dian)(dian)(dian)(dian)荷（典型值52nC），最小化开关损耗(hao)，快速切换能力(li)在电(dian)(dian)(dian)(dian)路中能够迅(xun)速响...
