KNP2910A场(chang)效应(ying)管采用超(chao)高密度电(dian)池设计(ji)(ji),漏(lou)源击穿电(dian)压100V, 漏(lou)极电(dian)流130A ,RD...KNP2910A场(chang)效应(ying)管采用超(chao)高密度电(dian)池设计(ji)(ji),漏(lou)源击穿电(dian)压100V, 漏(lou)极电(dian)流130A ,RDS(ON)值为(wei)5mΩ,超(chao)低导(dao)通电(dian)阻,最(zui)大(da)限度地减少导(dao)通损(sun)耗(hao),最(zui)小化(hua)开关损(sun)耗(hao);100%雪崩(beng)...
KNB2808A是(shi)一(yi)款10串-16串保护板专(zhuan)用(yong)MOS管,漏(lou)源击穿电(dian)压80V, 漏(lou)极电(dian)流150A ,R...KNB2808A是(shi)一(yi)款10串-16串保护板专(zhuan)用(yong)MOS管,漏(lou)源击穿电(dian)压80V, 漏(lou)极电(dian)流150A ,RDS(ON)值为4mΩ,极低RDS(ON)和优秀(xiu)栅极电(dian)荷,最(zui)大限度(du)地减(jian)少(shao)导(dao)通损耗,最(zui)小化(hua)开...
KIA35P10AD场(chang)效应(ying)管采用先进(jin)的(de)沟槽(cao)MOSFET技术,在(zai)电(dian)(dian)机(ji)控制(zhi)和(he)驱动、电(dian)(dian)池管理、U...KIA35P10AD场(chang)效应(ying)管采用先进(jin)的(de)沟槽(cao)MOSFET技术,在(zai)电(dian)(dian)机(ji)控制(zhi)和(he)驱动、电(dian)(dian)池管理、UPS不(bu)间(jian)断(duan)电(dian)(dian)源(yuan)中热销,漏源(yuan)击穿电(dian)(dian)压(ya)-100V, 漏极电(dian)(dian)流-35A ,RDS(ON)值为32mΩ,提供...
KNB3308B是一款10-16串保护(hu)板(ban)专(zhuan)用MOS管,漏(lou)(lou)源击穿电(dian)(dian)压80V,漏(lou)(lou)极电(dian)(dian)流80A,RDS(...KNB3308B是一款10-16串保护(hu)板(ban)专(zhuan)用MOS管,漏(lou)(lou)源击穿电(dian)(dian)压80V,漏(lou)(lou)极电(dian)(dian)流80A,RDS(ON)值(zhi)仅(jin)为(wei)7.2mΩ,低导通电(dian)(dian)阻最(zui)大限度地减少(shao)导电(dian)(dian)损耗,最(zui)小(xiao)化(hua)开关损耗,确保锂(li)电(dian)(dian)池...
KNB3208A场效应(ying)管(guan)(guan)漏(lou)源击穿(chuan)电(dian)(dian)(dian)压(ya)85V,漏(lou)极(ji)电(dian)(dian)(dian)流100A,RDS(ON),typ.=6.5mΩ@VGS=1...KNB3208A场效应(ying)管(guan)(guan)漏(lou)源击穿(chuan)电(dian)(dian)(dian)压(ya)85V,漏(lou)极(ji)电(dian)(dian)(dian)流100A,RDS(ON),typ.=6.5mΩ@VGS=10V,采用(yong)专有(you)新(xin)沟槽技术,超低电(dian)(dian)(dian)阻减少导电(dian)(dian)(dian)损(sun)耗,最小化开(kai)关(guan)损(sun)耗;低门电(dian)(dian)(dian)荷、快...
KNB3306B场效(xiao)应(ying)管漏源击穿(chuan)电(dian)(dian)压68V,漏极电(dian)(dian)流80A,是一(yi)款7-10串保护板(ban)专用MOS管...KNB3306B场效(xiao)应(ying)管漏源击穿(chuan)电(dian)(dian)压68V,漏极电(dian)(dian)流80A,是一(yi)款7-10串保护板(ban)专用MOS管,RDS(on)=7mΩ@VGS=10V,低导通电(dian)(dian)阻(zu),最大限度地减少导电(dian)(dian)损耗,最小化开关(guan)损耗;开...