KIA13N50H场(chang)效(xiao)应管漏(lou)源电(dian)(dian)压500V，漏(lou)极(ji)电(dian)(dian)流(liu)13A，导通电(dian)(dian)阻(zu)RDS（ON）0.4Ω，高效(xiao)低(di)(di)...KIA13N50H场(chang)效(xiao)应管漏(lou)源电(dian)(dian)压500V，漏(lou)极(ji)电(dian)(dian)流(liu)13A，导通电(dian)(dian)阻(zu)RDS（ON）0.4Ω，高效(xiao)低(di)(di)耗；低(di)(di)栅极(ji)电(dian)(dian)荷（典型值45nC），最小化开关损耗，具有(you)快速切换(huan)能力(li)、指定雪(xue)崩能量、...
KIA16N50H场效应管(guan)漏(lou)源(yuan)电(dian)压(ya)500V，漏(lou)极电(dian)流16A，出色(se)的导(dao)通电(dian)阻RDS（ON）0.32Ω...KIA16N50H场效应管(guan)漏(lou)源(yuan)电(dian)压(ya)500V，漏(lou)极电(dian)流16A，出色(se)的导(dao)通电(dian)阻RDS（ON）0.32Ω；低栅(zha)极电(dian)荷(he)（典(dian)型值45nC），最小化开关损耗，具有快速切(qie)换(huan)能(neng)力、指定雪崩能(neng)量、改...
储能(neng)电(dian)(dian)(dian)源场效(xiao)应管(guan)KIA10N60H漏(lou)源电(dian)(dian)(dian)压600V，漏(lou)极电(dian)(dian)(dian)流9.5A，出色的(de)导(dao)通(tong)电(dian)(dian)(dian)阻(zu)RDS（O...储能(neng)电(dian)(dian)(dian)源场效(xiao)应管(guan)KIA10N60H漏(lou)源电(dian)(dian)(dian)压600V，漏(lou)极电(dian)(dian)(dian)流9.5A，出色的(de)导(dao)通(tong)电(dian)(dian)(dian)阻(zu)RDS（ON）0.6Ω；低栅极电(dian)(dian)(dian)荷（典(dian)型值44nC），最小化开关(guan)损(sun)耗(hao)，具有快速切换能(neng)力、指定雪崩(beng)...
锂(li)电(dian)(dian)(dian)(dian)池保护(hu)板mos管KIA7P03A是一款高单元密(mi)度(du)P沟道(dao)MOSFET，漏(lou)源电(dian)(dian)(dian)(dian)压-30V，漏(lou)极电(dian)(dian)(dian)(dian)...锂(li)电(dian)(dian)(dian)(dian)池保护(hu)板mos管KIA7P03A是一款高单元密(mi)度(du)P沟道(dao)MOSFET，漏(lou)源电(dian)(dian)(dian)(dian)压-30V，漏(lou)极电(dian)(dian)(dian)(dian)流-7.5A，出色的导通电(dian)(dian)(dian)(dian)阻RDS（ON）18mΩ；具有超低的栅极电(dian)(dian)(dian)(dian)荷(he)，最小化开关损耗，具...
逆变器(qi)场(chang)(chang)效(xiao)应管KNF7650A采用高级平面(mian)工(gong)艺(yi)制(zhi)(zhi)造(zao)，加固(gu)多晶硅栅极(ji)结构，能(neng)够(gou)提升设(she)...逆变器(qi)场(chang)(chang)效(xiao)应管KNF7650A采用高级平面(mian)工(gong)艺(yi)制(zhi)(zhi)造(zao)，加固(gu)多晶硅栅极(ji)结构，能(neng)够(gou)提升设(she)备性能(neng)，提高系统效(xiao)率；KNF7650A漏(lou)源电(dian)压500V，漏(lou)极(ji)电(dian)流25A，RDS（ON）为170mΩ；低...
KNX6650A场(chang)效应管(guan)采(cai)用专有平面新(xin)技术，漏(lou)(lou)源电压500V，漏(lou)(lou)极电流15A，为高压、高...KNX6650A场(chang)效应管(guan)采(cai)用专有平面新(xin)技术，漏(lou)(lou)源电压500V，漏(lou)(lou)极电流15A，为高压、高速(su)功率开(kai)关应用而(er)设计，RDS（ON）为0.33Ω；低栅电荷最小开(kai)关损耗、快速(su)恢复体(ti)二极管(guan)...
