30V MOS管选(xuan)型表及参数资料-锂电池保护板(ban)电路图详解-KIA MOS管
信息来(lai)源:本(ben)站 日期:2018-09-18
锂(li)电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)保(bao)护板是对串联(lian)锂(li)电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)组的(de)(de)充(chong)(chong)放(fang)(fang)(fang)电(dian)(dian)(dian)保(bao)护;在(zai)充(chong)(chong)满(man)电(dian)(dian)(dian)时能保(bao)证各(ge)(ge)单(dan)体(ti)电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)之间的(de)(de)电(dian)(dian)(dian)压(ya)差异(yi)小(xiao)于(yu)设定值(一(yi)般(ban)±20mV),实现(xian)电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)组各(ge)(ge)单(dan)体(ti)电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)均(jun)充(chong)(chong),有(you)效地改善了串联(lian)充(chong)(chong)电(dian)(dian)(dian)方式(shi)下的(de)(de)充(chong)(chong)电(dian)(dian)(dian)效果;同时检(jian)测电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)组中各(ge)(ge)个单(dan)体(ti)电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)过压(ya)、欠(qian)压(ya)、过流、短路、过温状态,保(bao)护并延长电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)使用寿命(ming);欠(qian)压(ya)保(bao)护使每一(yi)单(dan)节电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)在(zai)放(fang)(fang)(fang)电(dian)(dian)(dian)使用时避免电(dian)(dian)(dian)池(chi)(chi)(chi)(chi)因过放(fang)(fang)(fang)电(dian)(dian)(dian)而损坏。
以下为30V MOS管选型(xing)表,主要应用领域是锂电(dian)池保护板
锂在(zai)元素周(zhou)期表上第3位,外层电(dian)子1个,容易失去(qu)形成稳定结构,所(suo)以(yi)是非常(chang)活泼的一(yi)种金属。而锂离子电(dian)池(chi)(chi)具有放电(dian)电(dian)流(liu)大(da)、内阻低、寿命长、无记忆效应等(deng)被人们广泛(fan)使(shi)用,锂离子电(dian)池(chi)(chi)在(zai)使(shi)用中严(yan)禁过充(chong)电(dian)、过放电(dian)、短路,否则将会使(shi)电(dian)池(chi)(chi)起火、爆(bao)炸(zha)等(deng)致命缺点,所(suo)以(yi),在(zai)使(shi)用可充(chong)锂电(dian)池(chi)(chi)都会带有一(yi)块保护(hu)板来保护(hu)电(dian)芯的安全。
保(bao)护板(ban)有两个核心部件:一块(kuai)保(bao)护IC,它是由精确的(de)比较器来获得(de)可靠的(de)保(bao)护参数;另(ling)外是MOSFET串在主充放(fang)电(dian)回路(lu)中担(dan)当高(gao)速开关,执行(xing)保(bao)护动作(zuo)。电(dian)路(lu)原理(li)图如下:
下(xia)面(mian)介绍:锂电(dian)(dian)(dian)池(chi)保护(hu)板(ban)主要(yao)由维(wei)护(hu)IC(过(guo)压(ya)维(wei)护(hu))和MOS管(guan)(过(guo)流(liu)维(wei)护(hu))构成,是用来保护(hu)锂电(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)芯安(an)全的器材。锂电(dian)(dian)(dian)池(chi)具有(you)放(fang)电(dian)(dian)(dian)电(dian)(dian)(dian)流(liu)大、内(nei)阻低(di)、寿(shou)数(shu)长(zhang)、无回忆效应等(deng)被人们广泛运(yun)用,锂离子电(dian)(dian)(dian)池(chi)在运(yun)用中禁止过(guo)充(chong)(chong)电(dian)(dian)(dian)、过(guo)放(fang)电(dian)(dian)(dian)、短(duan)路,不然将会使电(dian)(dian)(dian)池(chi)起火、爆(bao)破等(deng)丧命缺陷,所以,在运(yun)用可充(chong)(chong)锂电(dian)(dian)(dian)池(chi)都会带有(you)一块维(wei)护(hu)板(ban)来维(wei)护(hu)电(dian)(dian)(dian)芯的安(an)全。
1、电压保护能力
过充电保(bao)护板:保(bao)护板有(you)(you)必要(yao)具有(you)(you)防止电芯(xin)电压超越预设(she)值的才(cai)干(gan)过放电维护:保(bao)护板有(you)(you)必要(yao)具有(you)(you)防止电芯(xin)电压底于预设(she)值的才(cai)干(gan)。
2、电流能力
(过(guo)流保护电流,短(duan)路保护)
保(bao)护(hu)板作为锂(li)电(dian)芯(xin)的安全(quan)保(bao)护(hu)器材,既要在(zai)(zai)设备的正常作业电(dian)流规模内,能可靠工作,又要在(zai)(zai)当电(dian)池被意外短路或过流时能迅(xun)速动作,使电(dian)芯(xin)得到保(bao)护(hu)。
3、导通电阻
定义(yi):当充(chong)电(dian)电(dian)流为500mA时,MOS管的导(dao)通阻抗。
由(you)于(yu)通(tong)(tong)讯设(she)(she)备(bei)的(de)工作频率较(jiao)高,数据传输(shu)(shu)要求误码率低,其脉(mai)冲串的(de)上(shang)升及下降沿(yan)陡,故对电(dian)(dian)(dian)池的(de)电(dian)(dian)(dian)流输(shu)(shu)出能力(li)和电(dian)(dian)(dian)压稳定度要求高,因而保护(hu)板(ban)的(de)MOS管开关导通(tong)(tong)时电(dian)(dian)(dian)阻要小,单(dan)节电(dian)(dian)(dian)芯保护(hu)板(ban)通(tong)(tong)常(chang)在《70mΩ,如太大会导致通(tong)(tong)讯设(she)(she)备(bei)作业不(bu)正常(chang),如手机在通(tong)(tong)话(hua)(hua)时突(tu)然断线、电(dian)(dian)(dian)话(hua)(hua)接(jie)不(bu)通(tong)(tong)、噪声等现(xian)象。
4、自耗电流
定义:IC作(zuo)业电压(ya)为3。6V,空载状况下,流(liu)经保护IC的作(zuo)业电流(liu),一般极小。
保护板的(de)自耗电流直接影响(xiang)电池的(de)待(dai)机时刻(ke),通常规(gui)则保护板的(de)自耗电流小于(yu)10微安(an)。
5、机械功能、温度适应能力、抗静电能力
保护(hu)板有必要能(neng)(neng)通过国(guo)标规则的(de)轰动,冲(chong)击实(shi)验;保护(hu)板在40到85度(du)能(neng)(neng)安全工作,能(neng)(neng)经受±15KV的(de)非触(chu)摸(mo)ESD静电测验。
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