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保护(hu)板的构成和主要作用

一、保护板的构成

锂(li)电(dian)(dian)(dian)(dian)(dian)池（可(ke)充型）之所以需要(yao)保(bao)(bao)护，是(shi)由(you)(you)它(ta)本身特(te)性(xing)决定的(de)(de)。由(you)(you)于锂(li)电(dian)(dian)(dian)(dian)(dian)池本身的(de)(de)材料决定了它(ta)不能(neng)被(bei)过(guo)充、过(guo)放(fang)、过(guo)流(liu)(liu)(liu)(liu)、短路(lu)及超高温(wen)充放(fang)电(dian)(dian)(dian)(dian)(dian)，因此锂(li)电(dian)(dian)(dian)(dian)(dian)池锂(li)电(dian)(dian)(dian)(dian)(dian)组件总会跟(gen)着一块(kuai)精致的(de)(de)保(bao)(bao)护板和一片(pian)电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)保(bao)(bao)险器出现。锂(li)电(dian)(dian)(dian)(dian)(dian)池的(de)(de)保(bao)(bao)护功能(neng)通常由(you)(you)保(bao)(bao)护电(dian)(dian)(dian)(dian)(dian)路(lu)板和PTC协同完成(cheng)，保(bao)(bao)护板是(shi)由(you)(you)电(dian)(dian)(dian)(dian)(dian)子电(dian)(dian)(dian)(dian)(dian)路(lu)组成(cheng)，在-40℃至+85℃的(de)(de)环境(jing)下时刻准确(que)的(de)(de)监视电(dian)(dian)(dian)(dian)(dian)芯的(de)(de)电(dian)(dian)(dian)(dian)(dian)压和充放(fang)回路(lu)的(de)(de)电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)，即(ji)时控制电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)回路(lu)的(de)(de)通断；PTC在高温(wen)环境(jing)下防止(zhi)电(dian)(dian)(dian)(dian)(dian)池发生恶劣(lie)的(de)(de)损坏。

保(bao)护板通常(chang)(chang)包(bao)括控(kong)制IC、MOS开(kai)关(guan)、电(dian)(dian)(dian)(dian)阻(zu)、电(dian)(dian)(dian)(dian)容及(ji)辅助器件NTC、ID存(cun)(cun)储器等。其(qi)中(zhong)控(kong)制IC，在一(yi)切正常(chang)(chang)的情况(kuang)下(xia)控(kong)制MOS开(kai)关(guan)导(dao)通，使(shi)电(dian)(dian)(dian)(dian)芯(xin)(xin)与(yu)外电(dian)(dian)(dian)(dian)路沟(gou)通，而当电(dian)(dian)(dian)(dian)芯(xin)(xin)电(dian)(dian)(dian)(dian)压或回路电(dian)(dian)(dian)(dian)流(liu)超过规定值时(shi)(shi)，它(ta)立刻（数十毫秒）控(kong)制MOS开(kai)关(guan)关(guan)断，保(bao)护电(dian)(dian)(dian)(dian)芯(xin)(xin)的安全。NTC是Negative temperaturecoefficient的缩写(xie)，意即负温(wen)度系(xi)数，在环境温(wen)度升高时(shi)(shi)，其(qi)阻(zu)值降低，使(shi)用(yong)电(dian)(dian)(dian)(dian)设(she)备(bei)或充电(dian)(dian)(dian)(dian)设(she)备(bei)及(ji)时(shi)(shi)反应、控(kong)制内部中(zhong)断而停止充放电(dian)(dian)(dian)(dian)。ID 存(cun)(cun)储器常(chang)(chang)为单线接(jie)口(kou)存(cun)(cun)储器，ID是Identification 的缩写(xie)即身(shen)份识别的意思，存(cun)(cun)储电(dian)(dian)(dian)(dian)池(chi)种(zhong)类、生产日期等信息。可起到(dao)产品的可追溯和应用(yong)的限制。

二、保(bao)护板的主要作用

一般要求在-25℃～85℃时Control(IC)检(jian)测控(kong)(kong)制电(dian)(dian)(dian)芯电(dian)(dian)(dian)压(ya)与充放电(dian)(dian)(dian)回路(lu)的工作电(dian)(dian)(dian)流(liu)、电(dian)(dian)(dian)压(ya)，在一切正常情(qing)况(kuang)下C-MOS开关管导通，使(shi)电(dian)(dian)(dian)芯与保护电(dian)(dian)(dian)路(lu)板处于正常工作状态(tai)，而当电(dian)(dian)(dian)芯电(dian)(dian)(dian)压(ya)或(huo)回路(lu)中(zhong)的工作电(dian)(dian)(dian)流(liu)超过控(kong)(kong)制IC中(zhong)比较电(dian)(dian)(dian)路(lu)预设值时，在15～30ms内（不(bu)同(tong)控(kong)(kong)制IC与C-MOS有不(bu)同(tong)的响应(ying)时间），将CMOS关断，即(ji)关闭电(dian)(dian)(dian)芯放电(dian)(dian)(dian)或(huo)充电(dian)(dian)(dian)回路(lu)，以保证使(shi)用者与电(dian)(dian)(dian)芯的安全(quan)。

保护板主要零件的功能介绍

R1：基准供电(dian)(dian)(dian)电(dian)(dian)(dian)阻；与IC内部(bu)电(dian)(dian)(dian)阻构成分压(ya)电(dian)(dian)(dian)路，控制(zhi)内部(bu)过充、过放电(dian)(dian)(dian)压(ya)比较(jiao)器的电(dian)(dian)(dian)平翻转；一般在阻值为330Ω、470Ω比较(jiao)多；当封装形式（即(ji)(ji)用标(biao)准元(yuan)件的长(zhang)和宽(kuan)来(lai)表(biao)示(shi)(shi)元(yuan)件大小，如(ru)0402封装标(biao)识此元(yuan)件的长(zhang)和宽(kuan)分别为1.0mm和0.5mm）较(jiao)大时，会(hui)用数字(zi)标(biao)识其阻值，如(ru)贴片电(dian)(dian)(dian)阻上数字(zi)标(biao)识473， 即(ji)(ji)表(biao)示(shi)(shi)其阻值为47000Ω即(ji)(ji)47KΩ（第三位(wei)数表(biao)示(shi)(shi)在前两位(wei)后面加0的位(wei)数）。

R2：过流(liu)、短(duan)路检(jian)测电(dian)阻；通(tong)过检(jian)测VM端电(dian)压(ya)控制保护板的(de)电(dian)流(liu) ，焊接(jie)不良(liang)、损坏(huai)会造成电(dian)池过流(liu) 、短(duan)路无保护，一般阻值为1KΩ、2KΩ较多。

R3：ID识别电(dian)阻(zu)或NTC电(dian)阻(zu)（前(qian)面有介绍）或两者都(dou)有。

总结：电(dian)(dian)(dian)阻(zu)在(zai)保(bao)护板中为(wei)(wei)黑色(se)贴(tie)片(pian)，用(yong)万用(yong)表可测其阻(zu)值(zhi)，当封装(zhuang)较大时其阻(zu)值(zhi)会用(yong)数字表示(shi)，表示(shi)方法如上所述，当然电(dian)(dian)(dian)阻(zu)阻(zu)值(zhi)一般都有(you)(you)偏差，每个电(dian)(dian)(dian)阻(zu)都有(you)(you)精度规格(ge)，如10KΩ电(dian)(dian)(dian)阻(zu)规格(ge)为(wei)(wei)+/－5％精度则(ze)其阻(zu)值(zhi)为(wei)(wei)9.5KΩ －10.5KΩ范围(wei)内都为(wei)(wei)合格(ge)。

C1、C2：由于电(dian)(dian)(dian)容(rong)两端(duan)电(dian)(dian)(dian)压不(bu)(bu)能突变，起(qi)瞬间(jian)稳压和滤(lv)波作用。总结：电(dian)(dian)(dian)容(rong)在保护板中(zhong)为(wei)(wei)黄色贴片(pian)，封(feng)装(zhuang)形式0402较多，也有少数(shu)0603封(feng)装(zhuang)(1.6mm长,0.8mm宽)；用万用表(biao)检(jian)测其(qi)阻值一(yi)般为(wei)(wei)无穷大或MΩ级别；电(dian)(dian)(dian)容(rong)漏电(dian)(dian)(dian)会产(chan)生自耗电(dian)(dian)(dian)大，短路无自恢复(fu)现(xian)象(xiang)。FUSE：普通FUSE或PTC（Positive Temperature Coefficient的缩写，意(yi)思(si)是正温(wen)度系数(shu)）；防止(zhi)不(bu)(bu)安(an)全大电(dian)(dian)(dian)流和高温(wen)放电(dian)(dian)(dian)的发生，其(qi)中(zhong)PTC有自恢复(fu)功能。

总(zong)结：FUSE在保护板中一般为(wei)白(bai)色贴(tie)片，LITTE公司(si)提供FUSE会在FUSE上标识字符D-T，字符表示意思为(wei)FUSE能承受的额定(ding)电流，如表示D额定(ding)电流为(wei)0.25A，S为(wei)4A，T为(wei)5A等。

U1：控制IC；保护板所有功能(neng)都(dou)是IC通过监视连接在VDD-VSS间的(de)电压差(cha)及VM-VSS间的(de)电压差(cha)而控制C-MOS执行(xing)开关动作(zuo)来实现的(de)。

Cout：过充控制端；通过MOS管(guan)T2栅极(ji)电(dian)压控制MOS管(guan)的开关。

Dout：过放、过流、短路控制端；通过MOS管(guan)T1栅极电(dian)压控制MOS管(guan)的开关。

VM：过流、短路保(bao)护电压(ya)检(jian)测(ce)端；通过检(jian)测(ce)VM端的电压(ya)实现电路的过流、短路保(bao)护

（U（VM）=I*R（MOSFET））。

总结：IC在保(bao)(bao)护板中一般为6个(ge)管脚(jiao)的(de)封装形式(shi)，其(qi)区别管脚(jiao)的(de)方法为：在封装体上标识黑(hei)点(dian)的(de)附近为第(di)1管脚(jiao)，然后逆(ni)时(shi)(shi)针旋(xuan)转分(fen)别为第(di)2、3、4、5、6管脚(jiao)；如封装体上无(wu)(wu)黑(hei)点(dian)标识，则正看(kan)封装体上字(zi)符左下为第(di)1管脚(jiao)，其(qi)余管脚(jiao)逆(ni)时(shi)(shi)针类推）C-MOS：场效应开关管；保(bao)(bao)护功能的(de)实现者 ；连(lian)焊(han)、虚焊(han)、假(jia)焊(han)、击穿时(shi)(shi)会造成电池无(wu)(wu)保(bao)(bao)护、无(wu)(wu)显(xian)示、输出电压低等不(bu)良现象。

总结(jie)：CMOS在保(bao)(bao)(bao)护板中一般为8个管脚(jiao)的(de)封装形式，它(ta)时由两个MOS管构成，相当于两个开关，分(fen)别(bie)控制过充保(bao)(bao)(bao)护和(he)过放、过流、短路保(bao)(bao)(bao)护；其管脚(jiao)区分(fen)方法和(he)IC一样。

在保护(hu)板正(zheng)常情况下，Vdd为(wei)(wei)高(gao)电(dian)平，Vss、VM为(wei)(wei)低电(dian)平，Dout、Cout为(wei)(wei)高(gao)电(dian)平；当Vdd、Vss、VM任何一项参数变(bian)换(huan)时，Dout或Cout的电(dian)平将发生变(bian)化，此时MOSFET执(zhi)行相应的动(dong)作（开、关(guan)电(dian)路(lu)），从(cong)而实现电(dian)路(lu)的保护(hu)和恢复功(gong)能。

保(bao)护板主(zhu)要性能测试方法

1．NTC电(dian)阻测试：

用万(wan)用表直(zhi)接测量NTC电阻值(zhi)，再与《温度变化与NTC阻值(zhi)对照(zhao)指导(dao)》对比。

2．识别电阻测试：

用(yong)万(wan)用(yong)表(biao)直接(jie)测量识别电阻值，再与《保护板重要(yao)项(xiang)目管(guan)理表(biao)》对比。

3.自(zi)耗电(dian)测试：

调恒流源为3.7V/500mA；万(wan)用表(biao)设置为uA档，表(biao)笔插入uA接(jie)孔，然后与(yu)恒流源串(chuan)联起(qi)来接(jie)保(bao)护板B+、B-如下(xia)图所示：此时万(wan)用表(biao)的读数(shu)即为保(bao)护板的自耗电，如无(wu)读数(shu)用镊子或锡线短接(jie)B-、P-，激活电路。

4.短路保护(hu)测试：

电芯接(jie)(jie)(jie)到保护板B+、B-上，用(yong)镊子或锡线短(duan)接(jie)(jie)(jie)B-、P-，再短(duan)接(jie)(jie)(jie)P+、P-；短(duan)路(lu)后用(yong)万(wan)用(yong)表(biao)测(ce)保护板开路(lu)电压(ya)（如下图所示）；反复(fu)短(duan)接(jie)(jie)(jie)3-5次，此时万(wan)用(yong)表(biao)读数应(ying)与电芯一致(zhi)，保护板应(ying)无冒烟(yan)、爆裂等现象。

5.内阻测试：

方法一、如(ru)右图(tu)连接好电路．用(yong)内阻(zu)(zu)测(ce)试仪(yi)测(ce)B-、P-间的(de)阻(zu)(zu)值(zhi)为(wei)RI，再(zai)测(ce)B+、P+间的(de)阻(zu)(zu)值(zhi)为(wei)R2，内阻(zu)(zu)测(ce)试仪(yi)本身内阻(zu)(zu)为(wei)R3，则保护板的(de)内阻(zu)(zu)为(wei)R1+R2-2R3．

方(fang)法(fa)二、

如右图接好(hao)电路。

用万用表(biao)分别测3+、P+间及B-、P-间电压。所得电压值即(ji)为(wei)(wei)保(bao)护(hu)板的(de)内(nei)阻，因为(wei)(wei)电路中的(de)电流为(wei)(wei)LA，根据欧姆(mu)定律：R=U/I。

如上图(tu)所示(shi)接(jie)(jie)好(hao)(hao)(hao)电(dian)路(lu)，按照重(zhong)要项目管理表设置好(hao)(hao)(hao)锂易(yi)安数(shu)据(ju)，再(zai)按自动按钮，接(jie)(jie)好(hao)(hao)(hao)后按红(hong)表笔(bi)上的按钮进行(xing)测(ce)(ce)试。此(ci)时锂易(yi)安测(ce)(ce)试仪的灯应(ying)逐次点(dian)亮，表示(shi)性(xing)能OK。按显示(shi)键检查测(ce)(ce)试数(shu)据(ju)：‘Chg’表示(shi)过充保(bao)护(hu)电(dian)压(ya)；‘Dis’表过放保(bao)护(hu)电(dian)压(ya)；‘Ocur’表示(shi)过流保(bao)护(hu)电(dian)流。

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12V锂电(dian)池保护(hu)板(ban)电(dian)路(lu)图(tu)

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