电动车充电器nos管工作原理及详解(jie)大全-利(li)盈娱乐(le)
信(xin)息来源：本(ben)站 日(ri)期：2017-11-14
电机(ji)是(shi)靠MOS的输出电流(liu)(liu)来驱动的，输出电流(liu)(liu)越大（为了防止过(guo)流(liu)(liu)烧坏MOS管，控制器有限流(liu)(liu)保护），电机(ji)扭矩就(jiu)强，加速就(jiu)有力。
开通(tong)过(guo)程、导通(tong)状(zhuang)(zhuang)态(tai)、关断过(guo)程、截(jie)止状(zhuang)(zhuang)态(tai)、击穿(chuan)状(zhuang)(zhuang)态(tai)。
MOS主要(yao)损耗(hao)(hao)(hao)包(bao)括(kuo)开关损耗(hao)(hao)(hao)（开通(tong)过程和(he)关断过程），导通(tong)损耗(hao)(hao)(hao)，截(jie)止损耗(hao)(hao)(hao)（漏电流引起的(de)，这个(ge)忽略不计），还有雪崩能量(liang)损耗(hao)(hao)(hao)。只要(yao)把这些(xie)损耗(hao)(hao)(hao)控制在MOS承受(shou)规格(ge)之内，MOS即会正常工(gong)作，超出承受(shou)范围，即发生损坏。
而开关损(sun)耗往(wang)往(wang)大于导通状(zhuang)态损(sun)耗，尤其是(shi)PWM没完全(quan)打开，处于脉宽调制状(zhuang)态时（对应电(dian)动车(che)的起(qi)步加速状(zhuang)态），而最高急速状(zhuang)态往(wang)往(wang)是(shi)导通损(sun)耗为主(zhu)。
MOS是(shi)电(dian)(dian)压(ya)驱动型(xing)器件(jian)，只要栅极G和(he)(he)(he)源(yuan)级(ji)S间(jian)(jian)(jian)给(ji)(ji)一(yi)个(ge)适(shi)当(dang)电(dian)(dian)压(ya)，源(yuan)级(ji)S和(he)(he)(he)漏(lou)级(ji)D间(jian)(jian)(jian)导(dao)电(dian)(dian)通路(lu)就形成(cheng)。这(zhei)个(ge)电(dian)(dian)流通路(lu)的(de)(de)(de)(de)电(dian)(dian)阻(zu)(zu)被成(cheng)为(wei)MOS内阻(zu)(zu)，也(ye)就是(shi)导(dao)通电(dian)(dian)阻(zu)(zu)。这(zhei)个(ge)内阻(zu)(zu)大(da)(da)小(xiao)基(ji)本决定了MOS芯片能承(cheng)受的(de)(de)(de)(de)最(zui)大(da)(da)导(dao)通电(dian)(dian)流（当(dang)然和(he)(he)(he)其它因素(su)有关(guan)，最(zui)有关(guan)的(de)(de)(de)(de)是(shi)热阻(zu)(zu)）。内阻(zu)(zu)越(yue)小(xiao)承(cheng)受电(dian)(dian)流越(yue)大(da)(da)（因为(wei)发热小(xiao)）。MOS问题远没这(zhei)么简单，麻烦(fan)在它的(de)(de)(de)(de)栅极和(he)(he)(he)源(yuan)级(ji)间(jian)(jian)(jian)，源(yuan)级(ji)和(he)(he)(he)漏(lou)级(ji)间(jian)(jian)(jian)，栅极和(he)(he)(he)漏(lou)级(ji)间(jian)(jian)(jian)内部都(dou)有等效(xiao)电(dian)(dian)容(rong)(rong)。所(suo)(suo)以给(ji)(ji)栅极电(dian)(dian)压(ya)的(de)(de)(de)(de)过(guo)程(cheng)(cheng)就是(shi)给(ji)(ji)电(dian)(dian)容(rong)(rong)充(chong)电(dian)(dian)的(de)(de)(de)(de)过(guo)程(cheng)(cheng)（电(dian)(dian)容(rong)(rong)电(dian)(dian)压(ya)不能突变），所(suo)(suo)以MOS源(yuan)级(ji)和(he)(he)(he)漏(lou)级(ji)间(jian)(jian)(jian)由(you)截(jie)止到(dao)导(dao)通的(de)(de)(de)(de)开通过(guo)程(cheng)(cheng)受栅极电(dian)(dian)容(rong)(rong)的(de)(de)(de)(de)充(chong)电(dian)(dian)过(guo)程(cheng)(cheng)制约(yue)。关(guan)断(duan)过(guo)程(cheng)(cheng)和(he)(he)(he)这(zhei)个(ge)相反。
MOS主要就(jiu)(jiu)是(shi)最优控制(zhi)它的(de)(de)(de)栅(zha)(zha)极(ji)(ji)(ji)。但是(shi)MOS内部(bu)这(zhei)三个(ge)(ge)(ge)等(deng)效电(dian)(dian)(dian)(dian)容是(shi)构成串(chuan)并(bing)联组合关系，它们相互影响，并(bing)不(bu)是(shi)独立(li)的(de)(de)(de)，如果(guo)独立(li)的(de)(de)(de)就(jiu)(jiu)很简单了。其中一个(ge)(ge)(ge)关键电(dian)(dian)(dian)(dian)容就(jiu)(jiu)是(shi)栅(zha)(zha)极(ji)(ji)(ji)和(he)漏(lou)级(ji)间(jian)(jian)的(de)(de)(de)电(dian)(dian)(dian)(dian)容Cgd，这(zhei)个(ge)(ge)(ge)电(dian)(dian)(dian)(dian)容业界称为米(mi)勒(le)(le)电(dian)(dian)(dian)(dian)容。这(zhei)个(ge)(ge)(ge)电(dian)(dian)(dian)(dian)容不(bu)是(shi)恒(heng)定的(de)(de)(de)，随栅(zha)(zha)极(ji)(ji)(ji)和(he)漏(lou)级(ji)间(jian)(jian)电(dian)(dian)(dian)(dian)压变化(hua)而迅(xun)速变化(hua)。这(zhei)个(ge)(ge)(ge)米(mi)勒(le)(le)电(dian)(dian)(dian)(dian)容是(shi)栅(zha)(zha)极(ji)(ji)(ji)和(he)源级(ji)电(dian)(dian)(dian)(dian)容充(chong)(chong)电(dian)(dian)(dian)(dian)的(de)(de)(de)绊脚(jiao)石，因为达到一个(ge)(ge)(ge)平(ping)台(tai)后，栅(zha)(zha)极(ji)(ji)(ji)的(de)(de)(de)充(chong)(chong)电(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)流(liu)必须给米(mi)勒(le)(le)电(dian)(dian)(dian)(dian)容充(chong)(chong)电(dian)(dian)(dian)(dian)，这(zhei)时(shi)栅(zha)(zha)极(ji)(ji)(ji)和(he)源级(ji)间(jian)(jian)电(dian)(dian)(dian)(dian)压不(bu)再升(sheng)高，达到一个(ge)(ge)(ge)平(ping)台(tai)，这(zhei)个(ge)(ge)(ge)是(shi)米(mi)勒(le)(le)平(ping)台(tai)（米(mi)勒(le)(le)平(ping)台(tai)就(jiu)(jiu)是(shi)给Cgd充(chong)(chong)电(dian)(dian)(dian)(dian)的(de)(de)(de)过程），米(mi)勒(le)(le)平(ping)台(tai)大(da)家首先想到的(de)(de)(de)麻烦就(jiu)(jiu)是(shi)米(mi)勒(le)(le)振荡。
因为这(zhei)(zhei)(zhei)个时候源级和漏级间电(dian)压迅速变(bian)化，内部电(dian)容相应迅速充放(fang)电(dian)，这(zhei)(zhei)(zhei)些电(dian)流脉冲会导致MOS寄生电(dian)感产生很大(da)感抗，这(zhei)(zhei)(zhei)里面就(jiu)有电(dian)容，电(dian)感，电(dian)阻组(zu)成震荡(dang)电(dian)路（能(neng)形成2个回路），并且电(dian)流脉冲越强频(pin)率越高(gao)震荡(dang)幅度越大(da)。所以(yi)最(zui)头疼(teng)的就(jiu)是(shi)这(zhei)(zhei)(zhei)个米勒平台如(ru)何过渡。
如果开(kai)关速(su)度很(hen)快(kuai)，这(zhei)个(ge)电(dian)(dian)(dian)(dian)流(liu)变化(hua)率很(hen)高，振幅加(jia)大(da)(da)并震(zhen)荡延(yan)时(shi)(shi)（栅(zha)极电(dian)(dian)(dian)(dian)压震(zhen)荡剧烈(lie)会(hui)影响栅(zha)极电(dian)(dian)(dian)(dian)容(rong)的(de)充电(dian)(dian)(dian)(dian)速(su)度，内部表现是(shi)(shi)电(dian)(dian)(dian)(dian)容(rong)一会(hui)充电(dian)(dian)(dian)(dian)，一会(hui)放(fang)电(dian)(dian)(dian)(dian)）。所以干脆开(kai)关慢(man)点（就是(shi)(shi)栅(zha)极电(dian)(dian)(dian)(dian)容(rong)慢(man)慢(man)充电(dian)(dian)(dian)(dian)，用小(xiao)电(dian)(dian)(dian)(dian)流(liu)充电(dian)(dian)(dian)(dian)），这(zhei)样震(zhen)荡是(shi)(shi)明显减(jian)轻了，但是(shi)(shi)开(kai)关损耗(hao)增(zeng)大(da)(da)了。MOS开(kai)通(tong)过(guo)程源级(ji)(ji)和漏级(ji)(ji)间等(deng)效电(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)相(xiang)当于从无穷(qiong)大(da)(da)电(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)到(dao)阻(zu)(zu)(zu)值很(hen)小(xiao)的(de)导(dao)通(tong)内阻(zu)(zu)(zu)（导(dao)通(tong)内阻(zu)(zu)(zu)一般低压mos只有(you)几毫(hao)欧(ou)姆）的(de)一个(ge)转变过(guo)程。比如一个(ge)MOS最大(da)(da)电(dian)(dian)(dian)(dian)流(liu)100A，电(dian)(dian)(dian)(dian)池电(dian)(dian)(dian)(dian)压96V，在开(kai)通(tong)过(guo)程中，有(you)那么一瞬间（刚进入米勒平(ping)台(tai)时(shi)(shi)）MOS发热(re)功(gong)(gong)率是(shi)(shi)96*100=9600w！这(zhei)时(shi)(shi)它发热(re)功(gong)(gong)率最大(da)(da)，然后(hou)发热(re)功(gong)(gong)率迅(xun)速(su)降低直到(dao)完全(quan)导(dao)通(tong)时(shi)(shi)功(gong)(gong)率变成100*100*0.003=30w（这(zhei)里假(jia)设这(zhei)个(ge)mos导(dao)通(tong)内阻(zu)(zu)(zu)3毫(hao)欧(ou)姆）。开(kai)关过(guo)程中这(zhei)个(ge)发热(re)功(gong)(gong)率变化(hua)是(shi)(shi)惊(jing)人的(de)。
如果(guo)开通时间慢(man)(man)，意味着发(fa)热(re)从(cong)9600w到30w过(guo)渡(du)的(de)慢(man)(man)，MOS结(jie)温会升高(gao)的(de)厉害。所以开关(guan)越(yue)慢(man)(man)，结(jie)温越(yue)高(gao)，容易烧(shao)(shao)MOS。为了不(bu)烧(shao)(shao)MOS，只能降低(di)(di)MOS限(xian)流(liu)或者降低(di)(di)电(dian)池(chi)(chi)电(dian)压(ya)，比如给它限(xian)制(zhi)(zhi)50a或电(dian)压(ya)降低(di)(di)一(yi)(yi)(yi)半(ban)成48v，这(zhei)样开关(guan)发(fa)热(re)损(sun)耗也降低(di)(di)了一(yi)(yi)(yi)半(ban)。不(bu)烧(shao)(shao)管(guan)子了。这(zhei)也是高(gao)压(ya)控(kong)(kong)容易烧(shao)(shao)管(guan)子原因，高(gao)压(ya)控(kong)(kong)制(zhi)(zhi)器(qi)和(he)低(di)(di)压(ya)的(de)只有(you)开关(guan)损(sun)耗不(bu)一(yi)(yi)(yi)样（开关(guan)损(sun)耗和(he)电(dian)池(chi)(chi)端电(dian)压(ya)基(ji)本成正比，假(jia)设(she)限(xian)流(liu)一(yi)(yi)(yi)样），导通损(sun)耗完全受mos内阻决定(ding)，和(he)电(dian)池(chi)(chi)电(dian)压(ya)没(mei)任何关(guan)系(xi)。我这(zhei)里说的(de)不(bu)一(yi)(yi)(yi)定(ding)每个人都(dou)需要很懂，大(da)概(gai)能知道点就好了，做控(kong)(kong)制(zhi)(zhi)器(qi)设(she)计(ji)的(de)应该能理解(jie)。
过(guo)流(liu)(liu)，大电(dian)(dian)流(liu)(liu)引起的高(gao)温损坏（分持(chi)续大电(dian)(dian)流(liu)(liu)和瞬间超(chao)大电(dian)(dian)流(liu)(liu)脉冲(chong)导致(zhi)结(jie)温超(chao)过(guo)承受值(zhi)）；过(guo)压，源漏级(ji)大于击穿(chuan)电(dian)(dian)压而击穿(chuan)；栅(zha)极(ji)击穿(chuan)，一般由于栅(zha)极(ji)电(dian)(dian)压受外界或驱动电(dian)(dian)路损坏超(chao)过(guo)允许最高(gao)电(dian)(dian)压（栅(zha)极(ji)电(dian)(dian)压一般需低于20v安全）以及静电(dian)(dian)损坏。
我(wo)们电(dian)动车(che)(che)上用的(de)功(gong)率(lv)(lv)mos和(he)(he)平(ping)常(chang)cmos集成(cheng)电(dian)路中的(de)小功(gong)率(lv)(lv)mos结构是(shi)(shi)(shi)(shi)不一(yi)样(yang)的(de)。小功(gong)率(lv)(lv)mos是(shi)(shi)(shi)(shi)平(ping)面(mian)型(xing)结构。而(er)电(dian)动车(che)(che)上上用的(de)功(gong)率(lv)(lv)mos是(shi)(shi)(shi)(shi)立体(ti)结构。平(ping)面(mian)型(xing)结构是(shi)(shi)(shi)(shi)指，mos栅(zha)极(ji)，源级和(he)(he)漏级都(dou)(dou)在(zai)芯片(pian)(pian)表面(mian)（或者说(shuo)正面(mian)），而(er)沟道(dao)也在(zai)芯片(pian)(pian)表面(mian)横向(xiang)排列(lie)。（我(wo)们常(chang)见的(de)教科书的(de)介绍(shao)mos原理一(yi)般(ban)都(dou)(dou)是(shi)(shi)(shi)(shi)拿(na)平(ping)面(mian)结构介绍(shao)）。而(er)功(gong)率(lv)(lv)mos的(de)立体(ti)结构（沟道(dao)是(shi)(shi)(shi)(shi)深槽立体(ti)结构）是(shi)(shi)(shi)(shi)栅(zha)极(ji)和(he)(he)源级引(yin)(yin)线从芯片(pian)(pian)正面(mian)引(yin)(yin)出（其(qi)(qi)实(shi)栅(zha)极(ji)也不在(zai)表面(mian)而(er)是(shi)(shi)(shi)(shi)内部，只是(shi)(shi)(shi)(shi)比较靠近表面(mian)），而(er)漏级是(shi)(shi)(shi)(shi)从芯片(pian)(pian)背(bei)面(mian)引(yin)(yin)出（其(qi)(qi)实(shi)整(zheng)个(ge)芯片(pian)(pian)背(bei)面(mian)都(dou)(dou)是(shi)(shi)(shi)(shi)漏级连(lian)接在(zai)一(yi)起(qi)的(de)，整(zheng)个(ge)个(ge)漏级用焊(han)(han)接材料直接焊(han)(han)接在(zai)金属(shu)(shu)板上，就是(shi)(shi)(shi)(shi)mos的(de)金属(shu)(shu)背(bei)板，一(yi)般(ban)是(shi)(shi)(shi)(shi)铜镀锡的(de)），所以(yi)我(wo)们见到(dao)的(de)mos一(yi)般(ban)金属(shu)(shu)板和(he)(he)中间(jian)引(yin)(yin)脚（就是(shi)(shi)(shi)(shi)漏级）是(shi)(shi)(shi)(shi)完全(quan)导(dao)通(tong)的(de)（有些特殊的(de)封装是(shi)(shi)(shi)(shi)可以(yi)做到(dao)金属(shu)(shu)板和(he)(he)中间(jian)脚绝缘的(de)）。
功率mos内(nei)部从漏级到源级是有(you)一个(ge)二(er)极(ji)(ji)管的，这个(ge)二(er)极(ji)(ji)管基本(ben)(ben)上所有(you)的功率mos都具有(you)，和(he)它本(ben)(ben)身结构(gou)有(you)关系（不(bu)需要单独制(zhi)(zhi)造(zao)，设(she)计本(ben)(ben)身就有(you)）。当然可以(yi)通(tong)过改变设(she)计制(zhi)(zhi)造(zao)工艺，不(bu)造(zao)出这个(ge)二(er)极(ji)(ji)管。但(dan)是这会影响芯片功率密(mi)度，要做到同样耐压(ya)和(he)内(nei)阻，需要更大的芯片面积（因(yin)为(wei)结构(gou)不(bu)同）。大家只是知道(dao)这回事就行了。
我(wo)们所(suo)(suo)见的(de)(de)(de)(de)mos管(guan)，其实(shi)内部由成千(qian)上万(wan)个(ge)小(xiao)(xiao)(xiao)mos管(guan)并联而成（实(shi)际数(shu)量一(yi)(yi)般是上千(qian)万(wan)个(ge)，和芯片面积和工艺有(you)关）。如果(guo)在工作(zuo)中，有(you)一(yi)(yi)个(ge)或几个(ge)小(xiao)(xiao)(xiao)管(guan)短(duan)路，则(ze)整(zheng)个(ge)mos表(biao)现(xian)为(wei)短(duan)路，当(dang)然(ran)大电流短(duan)路mos可能(neng)直接烧断了（有(you)时表(biao)现(xian)为(wei)金属板和黑色塑封间(jian)开(kai)裂(lie)），又表(biao)现(xian)为(wei)开(kai)路。大家可能(neng)会想这(zhei)上千(qian)万(wan)个(ge)小(xiao)(xiao)(xiao)mos应该(gai)很(hen)容易出现(xian)一(yi)(yi)个(ge)或几个(ge)坏的(de)(de)(de)(de)吧，其实(shi)真(zhen)没那么(me)容易，目前的(de)(de)(de)(de)制(zhi)造(zao)工艺基本(ben)保证了这(zhei)些(xie)(xie)小(xiao)(xiao)(xiao)单位各种参(can)数(shu)高度(du)一(yi)(yi)致(zhi)(zhi)性。它们的(de)(de)(de)(de)各种开(kai)关动(dong)作(zuo)几乎完全一(yi)(yi)致(zhi)(zhi)，当(dang)然(ran)最终烧坏时，肯定有(you)先(xian)承受不(bu)(bu)了的(de)(de)(de)(de)小(xiao)(xiao)(xiao)管(guan)先(xian)坏。所(suo)(suo)以管(guan)子的(de)(de)(de)(de)稳(wen)定性和制(zhi)造(zao)工艺密不(bu)(bu)可分，差的(de)(de)(de)(de)工艺可能(neng)导(dao)致(zhi)(zhi)这(zhei)些(xie)(xie)小(xiao)(xiao)(xiao)管(guan)的(de)(de)(de)(de)参(can)数(shu)不(bu)(bu)那么(me)一(yi)(yi)致(zhi)(zhi)。有(you)时一(yi)(yi)点(dian)小(xiao)(xiao)(xiao)的(de)(de)(de)(de)工艺缺陷（比如一(yi)(yi)个(ge)1um甚至更小(xiao)(xiao)(xiao)的(de)(de)(de)(de)颗(ke)粒(li)如果(guo)在关键位置）往往会造(zao)成整(zheng)个(ge)芯片（缺陷所(suo)(suo)在的(de)(de)(de)(de)管(guan)芯）报(bao)废(fei)。
不(bu)同封(feng)(feng)装方式(shi)则(ze)内部寄(ji)(ji)生电(dian)(dian)感差异很大(da)(da)。电(dian)(dian)动车上(shang)常(chang)用的小管（TO-220封(feng)(feng)装）和大(da)(da)管（TO-247封(feng)(feng)装）封(feng)(feng)装电(dian)(dian)感都挺大(da)(da)，但是(shi)(shi)之所以(yi)它们用量很高，是(shi)(shi)因为这(zhei)种结构散(san)热设(she)计比较容易（大(da)(da)功率下(xia)散(san)热是(shi)(shi)非常(chang)重要(yao)的）。一般大(da)(da)管封(feng)(feng)装电(dian)(dian)感是(shi)(shi)大(da)(da)于小管的。在控(kong)制器(qi)设(she)计时(shi)，mos封(feng)(feng)装寄(ji)(ji)生电(dian)(dian)感需要(yao)考虑(lv)，但也许无法解决，不(bu)过外(wai)部布线电(dian)(dian)感则(ze)必须设(she)计合理，尤(you)其是(shi)(shi)多管并联时(shi)做到均匀(yun)分配(pei)。
大(da)管(guan)和小(xiao)管(guan)的(de)(de)优(you)缺点(dian)比较(jiao)（只这(zhei)(zhei)两种(zhong)比）。大(da)管(guan)优(you)点(dian)，金属(shu)背板(ban)面积大(da)所(suo)以(yi)散热好做，封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)阻(zu)低(di)（引(yin)线粗），所(suo)以(yi)封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)流(liu)可(ke)以(yi)做到(dao)很大(da)（可(ke)以(yi)200a左右）。大(da)管(guan)缺点(dian)，占地(di)方(fang)大(da)（这(zhei)(zhei)个(ge)(ge)很明显），封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)感稍大(da)。小(xiao)管(guan)优(you)点(dian)，占地(di)方(fang)小(xiao)，封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)感稍小(xiao)。小(xiao)管(guan)缺点(dian)，封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)阻(zu)大(da)（引(yin)线细），封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)流(liu)较(jiao)小(xiao)（一般120a以(yi)下），金属(shu)板(ban)面积小(xiao)散热较(jiao)弱。（封(feng)装(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)(zhuang)电(dian)(dian)(dian)流(liu)和芯(xin)片过流(liu)能力是(shi)两个(ge)(ge)完全不同(tong)的(de)(de)概念，有的(de)(de)厂(chang)家规格书标芯(xin)片过流(liu)能力，而有的(de)(de)厂(chang)家是(shi)这(zhei)(zhei)两个(ge)(ge)电(dian)(dian)(dian)流(liu)哪(na)(na)个(ge)(ge)小(xiao)标哪(na)(na)个(ge)(ge)。因为小(xiao)的(de)(de)决(jue)定(ding)了整个(ge)(ge)管(guan)子的(de)(de)电(dian)(dian)(dian)流(liu)能力。
大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)和(he)小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)简单误区及说(shuo)明。千万不(bu)要(yao)认(ren)为(wei)大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)的(de)(de)芯(xin)(xin)片面(mian)积(ji)(ji)(ji)一定(ding)大(da)(da)(da)(da)(da)(da)于小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)的(de)(de)。有(you)些(xie)芯(xin)(xin)片本来就有(you)不(bu)同(tong)的(de)(de)封(feng)(feng)装(zhuang)(zhuang)方式，比如分别用小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)和(he)大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)，其实(shi)它们的(de)(de)芯(xin)(xin)片面(mian)积(ji)(ji)(ji)一样(yang)大(da)(da)(da)(da)(da)(da)，大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)只是为(wei)了(le)散热更(geng)好些(xie)或封(feng)(feng)装(zhuang)(zhuang)电流更(geng)大(da)(da)(da)(da)(da)(da)些(xie)。所(suo)以大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)里面(mian)芯(xin)(xin)片面(mian)积(ji)(ji)(ji)可(ke)大(da)(da)(da)(da)(da)(da)可(ke)小(xiao)(xiao)(xiao)，同(tong)样(yang)小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)里面(mian)芯(xin)(xin)片面(mian)积(ji)(ji)(ji)也可(ke)大(da)(da)(da)(da)(da)(da)可(ke)小(xiao)(xiao)(xiao)。不(bu)过(guo)大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)能容纳的(de)(de)最大(da)(da)(da)(da)(da)(da)芯(xin)(xin)片面(mian)积(ji)(ji)(ji)大(da)(da)(da)(da)(da)(da)概是小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)的(de)(de)2倍(bei)（甚至多点）。举例(li)说(shuo)明，irfb4110用小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)，芯(xin)(xin)片已经(jing)把(ba)小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)内(nei)部填满了(le)，面(mian)积(ji)(ji)(ji)再大(da)(da)(da)(da)(da)(da)小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)放不(bu)进了(le)，而为(wei)了(le)得到更(geng)低内(nei)阻管(guan)(guan)(guan)(guan)(guan)子，所(suo)以有(you)大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)irfp4468，这(zhei)个芯(xin)(xin)片面(mian)积(ji)(ji)(ji)比irfb4110大(da)(da)(da)(da)(da)(da)了(le)一倍(bei)，所(suo)以它的(de)(de)内(nei)阻低了(le)一半，各种电容大(da)(da)(da)(da)(da)(da)了(le)一倍(bei)。所(suo)以一个4468的(de)(de)芯(xin)(xin)片成本是4110的(de)(de)2倍(bei)（同(tong)样(yang)大(da)(da)(da)(da)(da)(da)管(guan)(guan)(guan)(guan)(guan)封(feng)(feng)装(zhuang)(zhuang)成本也比小(xiao)(xiao)(xiao)管(guan)(guan)(guan)(guan)(guan)高）。所(suo)以4468比4110贵(gui)了(le)差不(bu)多一倍(bei)（相当于把(ba)两个4110封(feng)(feng)装(zhuang)(zhuang)在一起的(de)(de)等(deng)效(xiao)效(xiao)果）。
40N20（40A 200V） 30N03 30N06 40N06 50N06 65N06 75NF75 100N03 3710 3205 3510（75A 100V） 6110（12A 100V） 7610（25A 100V）8A60V 18A60V 22A60V 70A60V 80A60V 13A60V 160A60V 230A60V 9A100V 130A100V
2N60 2N65 3N80 4N60 4N65 5N60 6N65 6N70 7N60 7N65 7N80 8N60 8N80 9N90 10N60 10N65 12N60 12N65 13N50 16N50 18N50 20N50 24N50 730 740 830 840 47A600V
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