碳化(hua)硅(gui),碳化(hua)硅(gui)管性能特(te)点和(he)主要用途是什么?详解
信息来源：本(ben)站 日期：2017-10-13
碳(tan)化硅(gui)管(guan)(guan)具有(you)强度高、硬度高、耐(nai)磨性好(hao)、耐(nai)高温、耐(nai)腐蚀(shi)、抗热(re)抗震(zhen)性好(hao)、导热(re)系(xi)数(shu)大以及(ji)抗氧化性好(hao)等优胜功能，首要用(yong)于中(zhong)频铸造、各种(zhong)热(re)处理(li)电炉(lu)、冶(ye)金、化工、有(you)色金属锻炼(lian)等职业，碳(tan)化硅(gui)保护(hu)管(guan)(guan)广(guang)泛用(yong)于冶(ye)金烧结炉(lu)和(he)中(zhong) 频加(jia)热(re)铸造炉(lu)，长度可根(gen)据现(xian)场实际(ji)需(xu)要定做。
碳(tan)化硅管(guan)是以碳(tan)化硅为首要(yao)原料，经高温(wen)烧成(cheng)的(de)一种优(you)良(liang)碳(tan)化硅成(cheng)品(pin)，它具有(you)耐(nai)高温(wen)、耐(nai)腐蚀(shi)、导(dao)热(re)(re)快、强度(du)(du)高、硬度(du)(du)高、耐(nai)磨性(xing)好、抗(kang)热(re)(re)抗(kang)震性(xing)好、导(dao)热(re)(re)系数大以及抗(kang)氧(yang)化性(xing)好等优(you)胜(sheng)功(gong)能，两头再配以专用的(de)耐(nai)高温(wen)绝缘套，可有(you)效的(de)避(bi)免金属(shu)溶液对电热(re)(re)元件(包含硅碳(tan)棒、电炉丝等)的(de)腐蚀(shi)，各(ge)项指(zhi)标均优(you)于各(ge)种石墨成(cheng)品(pin)首要(yao)应用于有(you)色金属(shu)锻(duan)炼，中频(pin)铸造、各(ge)种热(re)(re)处理(li)电炉、冶金、化工(gong)等多种职业(ye)。碳(tan)化硅保(bao)护管(guan)导(dao)热(re)(re)性(xing)、抗(kang)氧(yang)化性(xing)、抗(kang)热(re)(re)冲击(ji)功(gong)能、高温(wen)耐(nai)磨功(gong)能优(you)胜(sheng)，并有(you)良(liang)好的(de)化学稳定性(xing)，抗(kang)酸才能极强，与强酸强碱不反(fan)响(xiang)。
该(gai)成(cheng)品以(yi)碳化硅(gui)为首(shou)要(yao)(yao)原(yuan)料，经特(te)别技(ji)术高(gao)温烧成(cheng)的(de)一种优良(liang)碳化硅(gui)成(cheng)品，长度标(biao)准可根据客(ke)户实(shi)际需要(yao)(yao)定做。
广(guang)泛应用于有色金属(shu)锻炼(lian)、铝成品除气体系、印染(ran)机械、锌铝锻炼(lian)及成品加工等职(zhi)业。
碳化硅(gui)JFET有(you)(you)着高输入(ru)阻抗、低噪声和(he)线(xian)性度好等特点，是(shi)目前发展较快(kuai)的(de)(de)(de)(de)(de)碳化硅(gui)器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)之一(yi)(yi)(yi)，并且率(lv)(lv)先(xian)实现(xian)了(le)商业化。与(yu)MOSFET器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)相比，JFET器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)不存(cun)在栅氧层缺陷造成的(de)(de)(de)(de)(de)可(ke)靠(kao)性问题和(he)载流子迁(qian)移率(lv)(lv)过低的(de)(de)(de)(de)(de)限制，同时单极性工(gong)(gong)作(zuo)特性使其保(bao)持了(le)良(liang)好的(de)(de)(de)(de)(de)高频(pin)工(gong)(gong)作(zuo)能力(li)。另外，JFET器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)具有(you)(you)更(geng)佳的(de)(de)(de)(de)(de)高温工(gong)(gong)作(zuo)稳定(ding)性和(he)可(ke)靠(kao)性。碳化硅(gui)JFET器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)的(de)(de)(de)(de)(de)门极的(de)(de)(de)(de)(de)结型结构(gou)使得(de)通(tong)(tong)(tong)常(chang)(chang)JFET的(de)(de)(de)(de)(de)阈值电(dian)(dian)(dian)(dian)压(ya)(ya)大多为负，即常(chang)(chang)通(tong)(tong)(tong)型器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)，这对于电(dian)(dian)(dian)(dian)力(li)电(dian)(dian)(dian)(dian)子的(de)(de)(de)(de)(de)应用极为不利，无法与(yu)目前通(tong)(tong)(tong)用的(de)(de)(de)(de)(de)驱(qu)动(dong)电(dian)(dian)(dian)(dian)路(lu)兼容。美(mei)国Semisouth公(gong)司和(he)Rutgers大学通(tong)(tong)(tong)过引入(ru)沟槽(cao)注入(ru)式或(huo)者(zhe)台(tai)面沟槽(cao)结构(gou)(TIVJFET)的(de)(de)(de)(de)(de)器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)工(gong)(gong)艺，开发出常(chang)(chang)断工(gong)(gong)作(zuo)状(zhuang)态的(de)(de)(de)(de)(de)增强型器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)。但是(shi)增强型器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)往(wang)往(wang)是(shi)在牺牲(sheng)一(yi)(yi)(yi)定(ding)的(de)(de)(de)(de)(de)正向导通(tong)(tong)(tong)电(dian)(dian)(dian)(dian)阻特性的(de)(de)(de)(de)(de)情况下形(xing)成的(de)(de)(de)(de)(de)，因(yin)此常(chang)(chang)通(tong)(tong)(tong)型(耗尽型)JFET更(geng)容易实现(xian)更(geng)高功率(lv)(lv)密(mi)度和(he)电(dian)(dian)(dian)(dian)流能力(li)，而耗尽型JFET器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)可(ke)以通(tong)(tong)(tong)过级联(lian)的(de)(de)(de)(de)(de)方法实现(xian)常(chang)(chang)断型工(gong)(gong)作(zuo)状(zhuang)态。级联(lian)的(de)(de)(de)(de)(de)方法是(shi)通(tong)(tong)(tong)过串联(lian)一(yi)(yi)(yi)个(ge)低压(ya)(ya)的(de)(de)(de)(de)(de)Si基(ji)(ji)MOSFET来实现(xian)。级联(lian)后的(de)(de)(de)(de)(de)JFET器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)的(de)(de)(de)(de)(de)驱(qu)动(dong)电(dian)(dian)(dian)(dian)路(lu)与(yu)通(tong)(tong)(tong)用的(de)(de)(de)(de)(de)硅(gui)基(ji)(ji)器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)驱(qu)动(dong)电(dian)(dian)(dian)(dian)路(lu)自然兼容。级联(lian)的(de)(de)(de)(de)(de)结构(gou)非常(chang)(chang)适用于在高压(ya)(ya)高功率(lv)(lv)场合替代原有(you)(you)的(de)(de)(de)(de)(de)硅(gui)IGBT器(qi)(qi)(qi)件(jian)(jian)(jian)(jian)(jian)，并且直接回(hui)避(bi)了(le)驱(qu)动(dong)电(dian)(dian)(dian)(dian)路(lu)的(de)(de)(de)(de)(de)兼容问题。
碳化硅(gui)(gui)MOSFE一(yi)直是最受瞩目的(de)(de)(de)碳化硅(gui)(gui)开(kai)关(guan)管，它不仅具有理(li)想的(de)(de)(de)栅(zha)极绝缘特性、高(gao)(gao)速(su)的(de)(de)(de)开(kai)关(guan)性能、低导通电(dian)阻和(he)高(gao)(gao)稳定(ding)性，而且其驱动(dong)电(dian)路(lu)非常简单,并与现有的(de)(de)(de)电(dian)力电(dian)子器(qi)件(jian)(硅(gui)(gui)功率(lv)MOSFET和(he)IGBT)驱动(dong)电(dian)路(lu)的(de)(de)(de)兼容性是碳化硅(gui)(gui)器(qi)件(jian)中最好的(de)(de)(de)。
SiCMOSFET器件长(zhang)(zhang)(zhang)期面(mian)(mian)(mian)临(lin)的(de)(de)(de)(de)两个主要(yao)挑战是(shi)栅氧(yang)(yang)层(ceng)(ceng)(ceng)的(de)(de)(de)(de)长(zhang)(zhang)(zhang)期可靠性(xing)问(wen)题和(he)沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)问(wen)题。其(qi)中沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)大导(dao)致导(dao)通(tong)时的(de)(de)(de)(de)损耗大，为(wei)减(jian)少(shao)导(dao)通(tong)损耗而降(jiang)(jiang)低(di)导(dao)通(tong)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)和(he)提高(gao)(gao)栅氧(yang)(yang)层(ceng)(ceng)(ceng)的(de)(de)(de)(de)可靠性(xing)的(de)(de)(de)(de)研发一(yi)直在(zai)(zai)(zai)进行。降(jiang)(jiang)低(di)导(dao)通(tong)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)的(de)(de)(de)(de)方法之一(yi)是(shi)提高(gao)(gao)反(fan)型沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)的(de)(de)(de)(de)载(zai)流(liu)(liu)子迁移率，减(jian)小沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)。为(wei)了(le)提高(gao)(gao)碳(tan)化硅MOSFET栅氧(yang)(yang)层(ceng)(ceng)(ceng)的(de)(de)(de)(de)质(zhi)量，降(jiang)(jiang)低(di)表(biao)面(mian)(mian)(mian)缺陷浓度，提高(gao)(gao)载(zai)流(liu)(liu)子数(shu)量和(he)迁移率，一(yi)种最通(tong)用的(de)(de)(de)(de)办(ban)法是(shi)实现生长(zhang)(zhang)(zhang)界面(mian)(mian)(mian)的(de)(de)(de)(de)氮注入，也被(bei)称为(wei)界面(mian)(mian)(mian)钝化，即在(zai)(zai)(zai)栅氧(yang)(yang)层(ceng)(ceng)(ceng)生长(zhang)(zhang)(zhang)过程结(jie)(jie)束后，在(zai)(zai)(zai)富氮的(de)(de)(de)(de)环(huan)境中进行高(gao)(gao)温退火，这样可以实现沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)载(zai)流(liu)(liu)子迁移率的(de)(de)(de)(de)提高(gao)(gao)，从而减(jian)小沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)，减(jian)小导(dao)通(tong)损耗。降(jiang)(jiang)低(di)导(dao)通(tong)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)的(de)(de)(de)(de)方法之二是(shi)采用在(zai)(zai)(zai)栅极正下方开掘沟(gou)(gou)(gou)槽(cao)的(de)(de)(de)(de)沟(gou)(gou)(gou)槽(cao)型栅极结(jie)(jie)构。目前已(yi)经投(tou)产(chan)的(de)(de)(de)(de)SiCMOSFET都是(shi)“平(ping)面(mian)(mian)(mian)型”。平(ping)面(mian)(mian)(mian)型在(zai)(zai)(zai)为(wei)了(le)降(jiang)(jiang)低(di)沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)而对单元(yuan)进行微细化时，容(rong)易(yi)导(dao)致JFET电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)增大的(de)(de)(de)(de)问(wen)题，导(dao)通(tong)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)的(de)(de)(de)(de)降(jiang)(jiang)低(di)方面(mian)(mian)(mian)存在(zai)(zai)(zai)一(yi)定的(de)(de)(de)(de)局限性(xing)。而沟(gou)(gou)(gou)槽(cao)型在(zai)(zai)(zai)构造(zao)上不存在(zai)(zai)(zai)JFET电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)。因此，适于降(jiang)(jiang)低(di)沟(gou)(gou)(gou)道(dao)(dao)(dao)(dao)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)、减(jian)小导(dao)通(tong)电(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)。
1．导热(re)功能(neng)好(hao)，管壁薄(bo)（只有(you)几个毫米），因而商(shang)品对(dui)温度改变反响(xiang)十分活络；
2．彻(che)底(di)不受(shou)腐蚀影响；
3．高温(wen)下不会熔化，对金属液(ye)没有(you)污染；
4．能够(gou)用来熔(rong)化富含钠(na)和(he)锶成分的合金(jin)；
5．商品的外表(biao)不(bu)会(hui)粘附炉渣(zha)，十分简单保护；
6. 耐高温（最高可达1600℃）；
7．抗热冲击功能好；
8．商品硬度高(gao)，难以折断；
9．性(xing)价比高。（使用(yong)寿命在半年以上）。
碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)电(dian)(dian)(dian)(dian)(dian)子(zi)(zi)器(qi)(qi)(qi)件(jian)(jian)在(zai)(zai)(zai)提高电(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)利(li)用(yong)效率(lv)和实现(xian)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)电(dian)(dian)(dian)(dian)(dian)子(zi)(zi)装(zhuang)置的(de)(de)(de)(de)(de)小(xiao)(xiao)型(xing)化(hua)(hua)方面将(jiang)(jiang)发挥越(yue)来越(yue)大的(de)(de)(de)(de)(de)优(you)势(shi)。碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)电(dian)(dian)(dian)(dian)(dian)子(zi)(zi)器(qi)(qi)(qi)件(jian)(jian)能(neng)(neng)(neng)提高电(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)利(li)用(yong)的(de)(de)(de)(de)(de)效率(lv)，来实现(xian)电(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)损(sun)(sun)失(shi)的(de)(de)(de)(de)(de)减少，因为相对于硅(gui)(gui)器(qi)(qi)(qi)件(jian)(jian)，碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)器(qi)(qi)(qi)件(jian)(jian)在(zai)(zai)(zai)降(jiang)低(di)(di)导通电(dian)(dian)(dian)(dian)(dian)阻和减小(xiao)(xiao)开(kai)关(guan)损(sun)(sun)耗等方面具(ju)有(you)优(you)势(shi)。比(bi)如，由(you)二极(ji)管(guan)和开(kai)关(guan)管(guan)组成(cheng)的(de)(de)(de)(de)(de)逆(ni)变电(dian)(dian)(dian)(dian)(dian)路中(zhong)，仅将(jiang)(jiang)二极(ji)管(guan)材料由(you)硅(gui)(gui)换(huan)成(cheng)碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)，逆(ni)变器(qi)(qi)(qi)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)损(sun)(sun)失(shi)就(jiu)可以(yi)降(jiang)低(di)(di)15～30%左右，如果开(kai)关(guan)管(guan)材料也换(huan)成(cheng)SiC，则电(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)损(sun)(sun)失(shi)可降(jiang)低(di)(di)一半以(yi)上。利(li)用(yong)碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)制作的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)电(dian)(dian)(dian)(dian)(dian)子(zi)(zi)器(qi)(qi)(qi)件(jian)(jian)具(ju)备三个能(neng)(neng)(neng)使(shi)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)转换(huan)器(qi)(qi)(qi)实现(xian)小(xiao)(xiao)型(xing)化(hua)(hua)的(de)(de)(de)(de)(de)特性：更(geng)高的(de)(de)(de)(de)(de)开(kai)关(guan)速度(du)(du)、更(geng)低(di)(di)的(de)(de)(de)(de)(de)损(sun)(sun)耗和更(geng)高的(de)(de)(de)(de)(de)工(gong)作温度(du)(du)。碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)器(qi)(qi)(qi)件(jian)(jian)能(neng)(neng)(neng)以(yi)硅(gui)(gui)器(qi)(qi)(qi)件(jian)(jian)数倍的(de)(de)(de)(de)(de)速度(du)(du)进(jin)行开(kai)关(guan)。开(kai)关(guan)频率(lv)越(yue)高，电(dian)(dian)(dian)(dian)(dian)感和电(dian)(dian)(dian)(dian)(dian)容等储能(neng)(neng)(neng)和滤波部件(jian)(jian)就(jiu)越(yue)容易实现(xian)小(xiao)(xiao)型(xing)化(hua)(hua);电(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)损(sun)(sun)失(shi)降(jiang)低(di)(di)，发热量就(jiu)会相应减少，因此可实现(xian)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)转换(huan)器(qi)(qi)(qi)的(de)(de)(de)(de)(de)小(xiao)(xiao)型(xing)化(hua)(hua);而(er)在(zai)(zai)(zai)结(jie)(jie)温方面，硅(gui)(gui)器(qi)(qi)(qi)件(jian)(jian)在(zai)(zai)(zai)200°C就(jiu)达到(dao)了极(ji)限，而(er)碳(tan)(tan)(tan)化(hua)(hua)硅(gui)(gui)器(qi)(qi)(qi)件(jian)(jian)能(neng)(neng)(neng)在(zai)(zai)(zai)更(geng)高结(jie)(jie)温和环(huan)境温度(du)(du)的(de)(de)(de)(de)(de)情况下工(gong)作，这样就(jiu)可以(yi)缩小(xiao)(xiao)或者省去(qu)电(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)转换(huan)器(qi)(qi)(qi)的(de)(de)(de)(de)(de)冷却机构。
随(sui)着碳(tan)化硅(gui)电(dian)(dian)力(li)电(dian)(dian)子(zi)器(qi)件(jian)(jian)(jian)的(de)技术进(jin)步，目前碳(tan)化硅(gui)器(qi)件(jian)(jian)(jian)相对于(yu)硅(gui)器(qi)件(jian)(jian)(jian)，不仅有性能的(de)巨大优(you)势，在系统成(cheng)本(ben)上(shang)的(de)优(you)势也逐渐显现。碳(tan)化硅(gui)器(qi)件(jian)(jian)(jian)将(jiang)逐步地(di)展(zhan)现出其性能和降低系统成(cheng)本(ben)方面的(de)优(you)势。
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