锂电(dian)池(chi)保护板(ban)电(dian)路图(tu)-分析锂电(dian)池(chi)保护板(ban)电(dian)路的特点及工作(zuo)原理-KIA MOS管
信(xin)息来源(yuan):本站 日(ri)期:2018-01-16
锂在(zai)元(yuan)素周期表(biao)上第3位(wei),外层电(dian)子(zi)1个,容易失(shi)去形成稳定(ding)结构,所(suo)以是非常活泼的(de)一种金属(shu)。而锂离子(zi)电(dian)池(chi)具有放(fang)电(dian)电(dian)流大(da)、内阻低、寿命长、无记忆效(xiao)应等(deng)被人们广泛使用(yong),锂离子(zi)电(dian)池(chi)在(zai)使用(yong)中(zhong)严(yan)禁过充电(dian)、过放(fang)电(dian)、短(duan)路,否则将会使电(dian)池(chi)起火、爆炸等(deng)致命缺点,所(suo)以,在(zai)使用(yong)可充锂电(dian)池(chi)都会带有一块(kuai)保护(hu)板(ban)来保护(hu)电(dian)芯的(de)安全。
保(bao)(bao)护板有两个核心部(bu)件:一块(kuai)保(bao)(bao)护IC,它是由精确的(de)比较器来获得可靠的(de)保(bao)(bao)护参数;另外是MOSFET串(chuan)在主充放电(dian)回路中担当(dang)高速开(kai)关,执(zhi)行保(bao)(bao)护动作。电(dian)路原理图如下:
下(xia)面介绍:锂电(dian)(dian)(dian)(dian)(dian)池(chi)保(bao)护(hu)(hu)板主要(yao)由维(wei)(wei)护(hu)(hu)IC(过(guo)(guo)压维(wei)(wei)护(hu)(hu))和MOS管(过(guo)(guo)流维(wei)(wei)护(hu)(hu))构成,是用(yong)来保(bao)护(hu)(hu)锂电(dian)(dian)(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)(dian)(dian)芯(xin)安全的(de)器材。锂电(dian)(dian)(dian)(dian)(dian)池(chi)具有放电(dian)(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)(dian)流大、内(nei)阻低(di)、寿数长(zhang)、无回忆效应等被(bei)人们(men)广泛运用(yong),锂离子电(dian)(dian)(dian)(dian)(dian)池(chi)在(zai)运用(yong)中禁止过(guo)(guo)充电(dian)(dian)(dian)(dian)(dian)、过(guo)(guo)放电(dian)(dian)(dian)(dian)(dian)、短路,不然将会使电(dian)(dian)(dian)(dian)(dian)池(chi)起(qi)火、爆破(po)等丧(sang)命缺陷(xian),所以,在(zai)运用(yong)可充锂电(dian)(dian)(dian)(dian)(dian)池(chi)都会带有一块维(wei)(wei)护(hu)(hu)板来维(wei)(wei)护(hu)(hu)电(dian)(dian)(dian)(dian)(dian)芯(xin)的(de)安全。
1、电压保护能力
过充(chong)电保(bao)(bao)护(hu)(hu)板:保(bao)(bao)护(hu)(hu)板有(you)(you)必要(yao)具有(you)(you)防止电芯电压(ya)超越预设值(zhi)的才(cai)干(gan)过放电维护(hu)(hu):保(bao)(bao)护(hu)(hu)板有(you)(you)必要(yao)具有(you)(you)防止电芯电压(ya)底于预设值(zhi)的才(cai)干(gan)。
2、电流能力
(过流(liu)保护电流(liu),短路保护)
保(bao)(bao)护板作为锂电(dian)芯(xin)的(de)安全保(bao)(bao)护器材,既(ji)要在设备的(de)正常作业电(dian)流(liu)规模(mo)内(nei),能可靠工作,又要在当电(dian)池被意外短路(lu)或过流(liu)时能迅速动(dong)作,使(shi)电(dian)芯(xin)得到(dao)保(bao)(bao)护。
3、导通电阻
定义(yi):当充电电流为500mA时,MOS管的导通阻(zu)抗。
由于通(tong)(tong)讯设备(bei)(bei)的(de)工作(zuo)频率(lv)较高,数据(ju)传输要求(qiu)误码率(lv)低,其脉(mai)冲串(chuan)的(de)上(shang)升及下降沿陡(dou),故(gu)对(dui)电(dian)(dian)池的(de)电(dian)(dian)流(liu)输出(chu)能力和电(dian)(dian)压稳定度要求(qiu)高,因而保(bao)护(hu)板(ban)的(de)MOS管开关导通(tong)(tong)时电(dian)(dian)阻要小,单节(jie)电(dian)(dian)芯(xin)保(bao)护(hu)板(ban)通(tong)(tong)常在《70mΩ,如太大会导致通(tong)(tong)讯设备(bei)(bei)作(zuo)业不(bu)正常,如手机在通(tong)(tong)话时突然断(duan)线(xian)、电(dian)(dian)话接不(bu)通(tong)(tong)、噪声等(deng)现象。
4、自耗电流
定义:IC作业电压为3。6V,空载(zai)状况(kuang)下,流(liu)经保护IC的作业电流(liu),一般极小。
保(bao)护板的自耗电流直接影响电池的待机时刻,通常规则保(bao)护板的自耗电流小(xiao)于10微(wei)安(an)。
5、机械功能、温度适应能力、抗静电能力
保护板有必(bi)要能通过国标规则的轰动(dong),冲击实(shi)验;保护板在40到85度能安全工作,能经受±15KV的非触摸ESD静(jing)电测(ce)验。
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联系(xi)方式:邹先生(KIA MOS管)
手机(ji):18123972950
QQ:2880195519
联系地址(zhi):深圳市福田区(qu)车公庙天安数(shu)码城天吉(ji)大厦CD座5C1
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