电(dian)动(dong)车(che)充电(dian)器nos管(guan)工(gong)作原理及详(xiang)解(jie)大全-利盈娱乐
信息来源(yuan)：本站 日期：2017-11-14
电机是(shi)靠MOS的输(shu)(shu)出(chu)电流(liu)(liu)来(lai)驱动的，输(shu)(shu)出(chu)电流(liu)(liu)越大（为了防止过(guo)流(liu)(liu)烧坏MOS管，控制器有(you)限流(liu)(liu)保(bao)护(hu)），电机扭矩就强，加速就有(you)力。
开通过程、导(dao)通状态、关(guan)断过程、截止(zhi)状态、击穿状态。
MOS主要(yao)损(sun)耗(hao)包(bao)括开关损(sun)耗(hao)（开通过程(cheng)和关断过程(cheng)），导通损(sun)耗(hao)，截止损(sun)耗(hao)（漏电流(liu)引起的，这个(ge)忽略(lve)不计），还有雪崩能量损(sun)耗(hao)。只(zhi)要(yao)把(ba)这些损(sun)耗(hao)控(kong)制在(zai)MOS承(cheng)受规格之内，MOS即会正常工作(zuo)，超出承(cheng)受范围，即发生损(sun)坏(huai)。
而开关损耗(hao)往(wang)往(wang)大于(yu)导通状态损耗(hao)，尤其是PWM没完全(quan)打开，处(chu)于(yu)脉宽调制状态时(shi)（对(dui)应电动车的起步加速状态），而最(zui)高(gao)急速状态往(wang)往(wang)是导通损耗(hao)为主(zhu)。
MOS是(shi)电(dian)压(ya)驱(qu)动型器件，只要栅(zha)(zha)极(ji)(ji)G和源(yuan)级(ji)(ji)(ji)(ji)S间(jian)给一(yi)个适(shi)当电(dian)压(ya)，源(yuan)级(ji)(ji)(ji)(ji)S和漏级(ji)(ji)(ji)(ji)D间(jian)导(dao)电(dian)通(tong)路(lu)就形成。这个电(dian)流(liu)(liu)通(tong)路(lu)的(de)电(dian)阻被(bei)成为MOS内(nei)阻，也就是(shi)导(dao)通(tong)电(dian)阻。这个内(nei)阻大小(xiao)(xiao)基本(ben)决定了MOS芯片能承(cheng)受(shou)(shou)的(de)最大导(dao)通(tong)电(dian)流(liu)(liu)（当然和其它因(yin)素有(you)(you)关，最有(you)(you)关的(de)是(shi)热阻）。内(nei)阻越小(xiao)(xiao)承(cheng)受(shou)(shou)电(dian)流(liu)(liu)越大（因(yin)为发热小(xiao)(xiao)）。MOS问(wen)题远没(mei)这么简(jian)单，麻烦在它的(de)栅(zha)(zha)极(ji)(ji)和源(yuan)级(ji)(ji)(ji)(ji)间(jian)，源(yuan)级(ji)(ji)(ji)(ji)和漏级(ji)(ji)(ji)(ji)间(jian)，栅(zha)(zha)极(ji)(ji)和漏级(ji)(ji)(ji)(ji)间(jian)内(nei)部都(dou)有(you)(you)等(deng)效电(dian)容。所(suo)以给栅(zha)(zha)极(ji)(ji)电(dian)压(ya)的(de)过程(cheng)(cheng)(cheng)就是(shi)给电(dian)容充(chong)电(dian)的(de)过程(cheng)(cheng)(cheng)（电(dian)容电(dian)压(ya)不能突变），所(suo)以MOS源(yuan)级(ji)(ji)(ji)(ji)和漏级(ji)(ji)(ji)(ji)间(jian)由(you)截止(zhi)到导(dao)通(tong)的(de)开通(tong)过程(cheng)(cheng)(cheng)受(shou)(shou)栅(zha)(zha)极(ji)(ji)电(dian)容的(de)充(chong)电(dian)过程(cheng)(cheng)(cheng)制约。关断过程(cheng)(cheng)(cheng)和这个相反(fan)。
MOS主要(yao)就(jiu)是最优控制它(ta)的(de)(de)(de)栅(zha)极(ji)(ji)。但是MOS内部这(zhei)(zhei)三个(ge)(ge)(ge)等(deng)效电(dian)容(rong)(rong)是构(gou)成(cheng)串(chuan)并联组合关(guan)(guan)系，它(ta)们(men)相互影(ying)响，并不是独立(li)的(de)(de)(de)，如果独立(li)的(de)(de)(de)就(jiu)很简单了。其中一个(ge)(ge)(ge)关(guan)(guan)键电(dian)容(rong)(rong)就(jiu)是栅(zha)极(ji)(ji)和(he)漏(lou)级间的(de)(de)(de)电(dian)容(rong)(rong)Cgd，这(zhei)(zhei)个(ge)(ge)(ge)电(dian)容(rong)(rong)业界称为米(mi)(mi)勒(le)(le)(le)(le)电(dian)容(rong)(rong)。这(zhei)(zhei)个(ge)(ge)(ge)电(dian)容(rong)(rong)不是恒定的(de)(de)(de)，随栅(zha)极(ji)(ji)和(he)漏(lou)级间电(dian)压(ya)变(bian)(bian)化而迅速变(bian)(bian)化。这(zhei)(zhei)个(ge)(ge)(ge)米(mi)(mi)勒(le)(le)(le)(le)电(dian)容(rong)(rong)是栅(zha)极(ji)(ji)和(he)源(yuan)级电(dian)容(rong)(rong)充电(dian)的(de)(de)(de)绊脚石，因为达到一个(ge)(ge)(ge)平(ping)(ping)台(tai)后(hou)，栅(zha)极(ji)(ji)的(de)(de)(de)充电(dian)电(dian)流必须(xu)给米(mi)(mi)勒(le)(le)(le)(le)电(dian)容(rong)(rong)充电(dian)，这(zhei)(zhei)时(shi)栅(zha)极(ji)(ji)和(he)源(yuan)级间电(dian)压(ya)不再升高，达到一个(ge)(ge)(ge)平(ping)(ping)台(tai)，这(zhei)(zhei)个(ge)(ge)(ge)是米(mi)(mi)勒(le)(le)(le)(le)平(ping)(ping)台(tai)（米(mi)(mi)勒(le)(le)(le)(le)平(ping)(ping)台(tai)就(jiu)是给Cgd充电(dian)的(de)(de)(de)过程），米(mi)(mi)勒(le)(le)(le)(le)平(ping)(ping)台(tai)大(da)家首先想到的(de)(de)(de)麻(ma)烦就(jiu)是米(mi)(mi)勒(le)(le)(le)(le)振荡。
因为(wei)这(zhei)(zhei)(zhei)个时(shi)候(hou)源级和(he)漏级间电(dian)(dian)压迅速变(bian)化，内部电(dian)(dian)容相(xiang)应(ying)迅速充(chong)放电(dian)(dian)，这(zhei)(zhei)(zhei)些(xie)电(dian)(dian)流脉冲会导致MOS寄(ji)生电(dian)(dian)感产生很大(da)感抗，这(zhei)(zhei)(zhei)里面就有电(dian)(dian)容，电(dian)(dian)感，电(dian)(dian)阻组成震荡电(dian)(dian)路（能形成2个回路），并且电(dian)(dian)流脉冲越(yue)强频率(lv)越(yue)高(gao)震荡幅度越(yue)大(da)。所以最头疼的就是这(zhei)(zhei)(zhei)个米勒平台如何(he)过渡。
如(ru)果开(kai)关(guan)速度很快，这(zhei)个电(dian)(dian)(dian)(dian)(dian)流变(bian)(bian)化率(lv)(lv)很高，振幅加(jia)大(da)并震(zhen)(zhen)荡延时(shi)（栅(zha)极(ji)电(dian)(dian)(dian)(dian)(dian)压震(zhen)(zhen)荡剧烈(lie)会影响栅(zha)极(ji)电(dian)(dian)(dian)(dian)(dian)容(rong)的充电(dian)(dian)(dian)(dian)(dian)速度，内部表(biao)现是(shi)电(dian)(dian)(dian)(dian)(dian)容(rong)一(yi)(yi)(yi)会充电(dian)(dian)(dian)(dian)(dian)，一(yi)(yi)(yi)会放电(dian)(dian)(dian)(dian)(dian)）。所以干脆开(kai)关(guan)慢(man)点（就是(shi)栅(zha)极(ji)电(dian)(dian)(dian)(dian)(dian)容(rong)慢(man)慢(man)充电(dian)(dian)(dian)(dian)(dian)，用(yong)小电(dian)(dian)(dian)(dian)(dian)流充电(dian)(dian)(dian)(dian)(dian)），这(zhei)样震(zhen)(zhen)荡是(shi)明显减(jian)轻了(le)(le)，但(dan)是(shi)开(kai)关(guan)损耗增大(da)了(le)(le)。MOS开(kai)通(tong)过(guo)(guo)程源级(ji)和漏级(ji)间(jian)等效(xiao)电(dian)(dian)(dian)(dian)(dian)阻(zu)相当于从无穷大(da)电(dian)(dian)(dian)(dian)(dian)阻(zu)到(dao)阻(zu)值很小的导(dao)(dao)通(tong)内阻(zu)（导(dao)(dao)通(tong)内阻(zu)一(yi)(yi)(yi)般(ban)低(di)压mos只(zhi)有几毫欧姆）的一(yi)(yi)(yi)个转变(bian)(bian)过(guo)(guo)程。比如(ru)一(yi)(yi)(yi)个MOS最(zui)大(da)电(dian)(dian)(dian)(dian)(dian)流100A，电(dian)(dian)(dian)(dian)(dian)池电(dian)(dian)(dian)(dian)(dian)压96V，在开(kai)通(tong)过(guo)(guo)程中，有那么一(yi)(yi)(yi)瞬间(jian)（刚进(jin)入(ru)米(mi)勒平台时(shi)）MOS发热(re)功(gong)率(lv)(lv)是(shi)96*100=9600w！这(zhei)时(shi)它发热(re)功(gong)率(lv)(lv)最(zui)大(da)，然后发热(re)功(gong)率(lv)(lv)迅速降低(di)直到(dao)完全导(dao)(dao)通(tong)时(shi)功(gong)率(lv)(lv)变(bian)(bian)成100*100*0.003=30w（这(zhei)里假设这(zhei)个mos导(dao)(dao)通(tong)内阻(zu)3毫欧姆）。开(kai)关(guan)过(guo)(guo)程中这(zhei)个发热(re)功(gong)率(lv)(lv)变(bian)(bian)化是(shi)惊(jing)人的。
如果开(kai)通(tong)时间慢(man)，意(yi)味(wei)着发热从9600w到30w过渡(du)的(de)慢(man)，MOS结(jie)温(wen)会升高的(de)厉害(hai)。所以开(kai)关越慢(man)，结(jie)温(wen)越高，容易烧(shao)(shao)MOS。为了不(bu)烧(shao)(shao)MOS，只(zhi)能降(jiang)低MOS限流或者降(jiang)低电(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)压(ya)，比(bi)如给它限制50a或电(dian)(dian)(dian)压(ya)降(jiang)低一半成(cheng)48v，这(zhei)样(yang)开(kai)关发热损(sun)耗(hao)也降(jiang)低了一半。不(bu)烧(shao)(shao)管子了。这(zhei)也是高压(ya)控(kong)(kong)容易烧(shao)(shao)管子原因，高压(ya)控(kong)(kong)制器和(he)低压(ya)的(de)只(zhi)有开(kai)关损(sun)耗(hao)不(bu)一样(yang)（开(kai)关损(sun)耗(hao)和(he)电(dian)(dian)(dian)池(chi)端电(dian)(dian)(dian)压(ya)基(ji)本成(cheng)正比(bi)，假设(she)(she)限流一样(yang)），导通(tong)损(sun)耗(hao)完全受mos内(nei)阻决(jue)定(ding)，和(he)电(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)压(ya)没(mei)任何(he)关系(xi)。我这(zhei)里(li)说的(de)不(bu)一定(ding)每个(ge)人都(dou)需要(yao)很懂，大(da)概(gai)能知(zhi)道点就好(hao)了，做控(kong)(kong)制器设(she)(she)计的(de)应该能理解。
过流(liu)，大电(dian)流(liu)引起(qi)的高(gao)温(wen)损(sun)坏（分持续大电(dian)流(liu)和瞬(shun)间超大电(dian)流(liu)脉冲导致(zhi)结(jie)温(wen)超过承受值）；过压(ya)，源漏(lou)级大于击穿(chuan)电(dian)压(ya)而击穿(chuan)；栅(zha)极(ji)击穿(chuan)，一般由于栅(zha)极(ji)电(dian)压(ya)受外界(jie)或驱动电(dian)路损(sun)坏超过允许最高(gao)电(dian)压(ya)（栅(zha)极(ji)电(dian)压(ya)一般需(xu)低于20v安全）以及(ji)静电(dian)损(sun)坏。
我(wo)们电动(dong)(dong)车(che)上(shang)用的(de)功率(lv)mos和(he)(he)平(ping)常cmos集成电路中(zhong)的(de)小功率(lv)mos结(jie)构(gou)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)不(bu)一(yi)样的(de)。小功率(lv)mos是(shi)(shi)(shi)(shi)(shi)(shi)(shi)平(ping)面型(xing)结(jie)构(gou)。而电动(dong)(dong)车(che)上(shang)上(shang)用的(de)功率(lv)mos是(shi)(shi)(shi)(shi)(shi)(shi)(shi)立体(ti)结(jie)构(gou)。平(ping)面型(xing)结(jie)构(gou)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)指，mos栅极，源级(ji)(ji)(ji)和(he)(he)漏(lou)级(ji)(ji)(ji)都在(zai)芯片(pian)表(biao)面（或者(zhe)说正面），而沟(gou)道也在(zai)芯片(pian)表(biao)面横向(xiang)排列。（我(wo)们常见的(de)教(jiao)科书的(de)介(jie)绍(shao)mos原理(li)一(yi)般(ban)都是(shi)(shi)(shi)(shi)(shi)(shi)(shi)拿平(ping)面结(jie)构(gou)介(jie)绍(shao)）。而功率(lv)mos的(de)立体(ti)结(jie)构(gou)（沟(gou)道是(shi)(shi)(shi)(shi)(shi)(shi)(shi)深(shen)槽立体(ti)结(jie)构(gou)）是(shi)(shi)(shi)(shi)(shi)(shi)(shi)栅极和(he)(he)源级(ji)(ji)(ji)引线从(cong)(cong)芯片(pian)正面引出（其(qi)实(shi)栅极也不(bu)在(zai)表(biao)面而是(shi)(shi)(shi)(shi)(shi)(shi)(shi)内部，只(zhi)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)比较靠近表(biao)面），而漏(lou)级(ji)(ji)(ji)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)从(cong)(cong)芯片(pian)背面引出（其(qi)实(shi)整(zheng)个芯片(pian)背面都是(shi)(shi)(shi)(shi)(shi)(shi)(shi)漏(lou)级(ji)(ji)(ji)连接在(zai)一(yi)起的(de)，整(zheng)个个漏(lou)级(ji)(ji)(ji)用焊(han)接材料直接焊(han)接在(zai)金(jin)(jin)属板(ban)上(shang)，就(jiu)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)mos的(de)金(jin)(jin)属背板(ban)，一(yi)般(ban)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)铜镀锡的(de)），所以(yi)我(wo)们见到的(de)mos一(yi)般(ban)金(jin)(jin)属板(ban)和(he)(he)中(zhong)间引脚（就(jiu)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)漏(lou)级(ji)(ji)(ji)）是(shi)(shi)(shi)(shi)(shi)(shi)(shi)完全导通的(de)（有些(xie)特殊的(de)封装(zhuang)是(shi)(shi)(shi)(shi)(shi)(shi)(shi)可以(yi)做到金(jin)(jin)属板(ban)和(he)(he)中(zhong)间脚绝缘的(de)）。
功率(lv)mos内部从漏级到源级是(shi)有一个(ge)二(er)极(ji)管(guan)的(de)，这个(ge)二(er)极(ji)管(guan)基本(ben)(ben)上所有的(de)功率(lv)mos都(dou)具有，和它本(ben)(ben)身结(jie)构有关系(xi)（不需要(yao)单独制造，设(she)计本(ben)(ben)身就有）。当(dang)然可以(yi)通过改(gai)变设(she)计制造工(gong)艺(yi)，不造出这个(ge)二(er)极(ji)管(guan)。但(dan)是(shi)这会影响(xiang)芯(xin)(xin)片功率(lv)密度，要(yao)做到同样(yang)耐(nai)压和内阻，需要(yao)更大的(de)芯(xin)(xin)片面积（因为结(jie)构不同）。大家只是(shi)知道这回事就行了。
我(wo)们(men)所见的(de)(de)(de)(de)mos管，其实内(nei)部由成(cheng)(cheng)千上(shang)万(wan)个(ge)小(xiao)(xiao)(xiao)(xiao)mos管并联而(er)成(cheng)(cheng)（实际数(shu)量一般是(shi)上(shang)千万(wan)个(ge)，和芯片(pian)(pian)面(mian)积和工(gong)艺有关(guan)）。如(ru)(ru)果(guo)在(zai)工(gong)作中(zhong)，有一个(ge)或几(ji)个(ge)小(xiao)(xiao)(xiao)(xiao)管短(duan)(duan)路，则整个(ge)mos表(biao)现(xian)为(wei)短(duan)(duan)路，当(dang)然大(da)电流短(duan)(duan)路mos可(ke)能(neng)(neng)直接烧(shao)断了（有时(shi)表(biao)现(xian)为(wei)金属板和黑(hei)色(se)塑封间开(kai)(kai)裂），又(you)表(biao)现(xian)为(wei)开(kai)(kai)路。大(da)家可(ke)能(neng)(neng)会(hui)想这(zhei)(zhei)上(shang)千万(wan)个(ge)小(xiao)(xiao)(xiao)(xiao)mos应该很容易(yi)出现(xian)一个(ge)或几(ji)个(ge)坏的(de)(de)(de)(de)吧，其实真没那(nei)么容易(yi)，目前的(de)(de)(de)(de)制造(zao)(zao)工(gong)艺基(ji)本保(bao)证了这(zhei)(zhei)些(xie)小(xiao)(xiao)(xiao)(xiao)单位(wei)(wei)各(ge)种参(can)数(shu)高度一致(zhi)性(xing)。它们(men)的(de)(de)(de)(de)各(ge)种开(kai)(kai)关(guan)动作几(ji)乎完全一致(zhi)，当(dang)然最(zui)终烧(shao)坏时(shi)，肯定(ding)有先承受不了的(de)(de)(de)(de)小(xiao)(xiao)(xiao)(xiao)管先坏。所以(yi)管子的(de)(de)(de)(de)稳定(ding)性(xing)和制造(zao)(zao)工(gong)艺密不可(ke)分，差的(de)(de)(de)(de)工(gong)艺可(ke)能(neng)(neng)导致(zhi)这(zhei)(zhei)些(xie)小(xiao)(xiao)(xiao)(xiao)管的(de)(de)(de)(de)参(can)数(shu)不那(nei)么一致(zhi)。有时(shi)一点小(xiao)(xiao)(xiao)(xiao)的(de)(de)(de)(de)工(gong)艺缺(que)陷(xian)（比如(ru)(ru)一个(ge)1um甚至更小(xiao)(xiao)(xiao)(xiao)的(de)(de)(de)(de)颗粒如(ru)(ru)果(guo)在(zai)关(guan)键位(wei)(wei)置(zhi)）往往会(hui)造(zao)(zao)成(cheng)(cheng)整个(ge)芯片(pian)(pian)（缺(que)陷(xian)所在(zai)的(de)(de)(de)(de)管芯）报废。
不(bu)同(tong)封(feng)装方式则内(nei)部(bu)寄(ji)生(sheng)电(dian)(dian)感(gan)差异很大(da)(da)(da)。电(dian)(dian)动车上常(chang)用的(de)小(xiao)管(guan)（TO-220封(feng)装）和大(da)(da)(da)管(guan)（TO-247封(feng)装）封(feng)装电(dian)(dian)感(gan)都挺大(da)(da)(da)，但是(shi)之所以它们用量(liang)很高，是(shi)因为这种结构散热(re)设(she)(she)计比较(jiao)容易(yi)（大(da)(da)(da)功率下散热(re)是(shi)非常(chang)重要的(de)）。一般大(da)(da)(da)管(guan)封(feng)装电(dian)(dian)感(gan)是(shi)大(da)(da)(da)于小(xiao)管(guan)的(de)。在控制器设(she)(she)计时，mos封(feng)装寄(ji)生(sheng)电(dian)(dian)感(gan)需要考虑，但也许无法(fa)解决，不(bu)过外部(bu)布(bu)线电(dian)(dian)感(gan)则必须设(she)(she)计合理(li)，尤其是(shi)多(duo)管(guan)并联时做到均匀分配。
大(da)管(guan)(guan)和小(xiao)(xiao)(xiao)(xiao)管(guan)(guan)的(de)(de)(de)优缺(que)点比(bi)较（只这(zhei)(zhei)两种(zhong)比(bi)）。大(da)管(guan)(guan)优点，金属背板面(mian)(mian)积大(da)所以散热好做，封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)阻低（引(yin)线粗），所以封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)流(liu)(liu)可以做到很大(da)（可以200a左右）。大(da)管(guan)(guan)缺(que)点，占(zhan)地方大(da)（这(zhei)(zhei)个(ge)很明显），封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)感(gan)(gan)稍大(da)。小(xiao)(xiao)(xiao)(xiao)管(guan)(guan)优点，占(zhan)地方小(xiao)(xiao)(xiao)(xiao)，封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)感(gan)(gan)稍小(xiao)(xiao)(xiao)(xiao)。小(xiao)(xiao)(xiao)(xiao)管(guan)(guan)缺(que)点，封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)阻大(da)（引(yin)线细(xi)），封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)流(liu)(liu)较小(xiao)(xiao)(xiao)(xiao)（一般120a以下），金属板面(mian)(mian)积小(xiao)(xiao)(xiao)(xiao)散热较弱。（封(feng)(feng)装(zhuang)电(dian)(dian)(dian)(dian)流(liu)(liu)和芯片(pian)过流(liu)(liu)能(neng)(neng)力(li)是(shi)两个(ge)完全不同的(de)(de)(de)概念，有的(de)(de)(de)厂(chang)家规格书标(biao)芯片(pian)过流(liu)(liu)能(neng)(neng)力(li)，而有的(de)(de)(de)厂(chang)家是(shi)这(zhei)(zhei)两个(ge)电(dian)(dian)(dian)(dian)流(liu)(liu)哪个(ge)小(xiao)(xiao)(xiao)(xiao)标(biao)哪个(ge)。因为小(xiao)(xiao)(xiao)(xiao)的(de)(de)(de)决定(ding)了整个(ge)管(guan)(guan)子的(de)(de)(de)电(dian)(dian)(dian)(dian)流(liu)(liu)能(neng)(neng)力(li)。
大(da)(da)(da)(da)管(guan)(guan)和小(xiao)(xiao)(xiao)管(guan)(guan)简单误区及说(shuo)明(ming)。千万不(bu)(bu)要认为大(da)(da)(da)(da)管(guan)(guan)的(de)(de)(de)芯(xin)(xin)片(pian)面(mian)(mian)(mian)积(ji)(ji)一(yi)定(ding)大(da)(da)(da)(da)于小(xiao)(xiao)(xiao)管(guan)(guan)的(de)(de)(de)。有(you)些(xie)芯(xin)(xin)片(pian)本来就有(you)不(bu)(bu)同的(de)(de)(de)封(feng)(feng)装方式，比(bi)如分别用小(xiao)(xiao)(xiao)管(guan)(guan)和大(da)(da)(da)(da)管(guan)(guan)封(feng)(feng)装，其实它们的(de)(de)(de)芯(xin)(xin)片(pian)面(mian)(mian)(mian)积(ji)(ji)一(yi)样(yang)大(da)(da)(da)(da)，大(da)(da)(da)(da)管(guan)(guan)封(feng)(feng)装只是为了(le)(le)(le)(le)散(san)热更好(hao)些(xie)或(huo)封(feng)(feng)装电(dian)流更大(da)(da)(da)(da)些(xie)。所(suo)以大(da)(da)(da)(da)管(guan)(guan)封(feng)(feng)装里面(mian)(mian)(mian)芯(xin)(xin)片(pian)面(mian)(mian)(mian)积(ji)(ji)可(ke)(ke)大(da)(da)(da)(da)可(ke)(ke)小(xiao)(xiao)(xiao)，同样(yang)小(xiao)(xiao)(xiao)管(guan)(guan)封(feng)(feng)装里面(mian)(mian)(mian)芯(xin)(xin)片(pian)面(mian)(mian)(mian)积(ji)(ji)也可(ke)(ke)大(da)(da)(da)(da)可(ke)(ke)小(xiao)(xiao)(xiao)。不(bu)(bu)过大(da)(da)(da)(da)管(guan)(guan)封(feng)(feng)装能容(rong)(rong)纳的(de)(de)(de)最(zui)大(da)(da)(da)(da)芯(xin)(xin)片(pian)面(mian)(mian)(mian)积(ji)(ji)大(da)(da)(da)(da)概是小(xiao)(xiao)(xiao)管(guan)(guan)封(feng)(feng)装的(de)(de)(de)2倍(bei)（甚至(zhi)多(duo)点）。举例说(shuo)明(ming)，irfb4110用小(xiao)(xiao)(xiao)管(guan)(guan)封(feng)(feng)装，芯(xin)(xin)片(pian)已经把小(xiao)(xiao)(xiao)管(guan)(guan)内部填(tian)满了(le)(le)(le)(le)，面(mian)(mian)(mian)积(ji)(ji)再大(da)(da)(da)(da)小(xiao)(xiao)(xiao)管(guan)(guan)放(fang)不(bu)(bu)进了(le)(le)(le)(le)，而为了(le)(le)(le)(le)得到更低内阻管(guan)(guan)子，所(suo)以有(you)大(da)(da)(da)(da)管(guan)(guan)irfp4468，这个芯(xin)(xin)片(pian)面(mian)(mian)(mian)积(ji)(ji)比(bi)irfb4110大(da)(da)(da)(da)了(le)(le)(le)(le)一(yi)倍(bei)，所(suo)以它的(de)(de)(de)内阻低了(le)(le)(le)(le)一(yi)半，各种电(dian)容(rong)(rong)大(da)(da)(da)(da)了(le)(le)(le)(le)一(yi)倍(bei)。所(suo)以一(yi)个4468的(de)(de)(de)芯(xin)(xin)片(pian)成本是4110的(de)(de)(de)2倍(bei)（同样(yang)大(da)(da)(da)(da)管(guan)(guan)封(feng)(feng)装成本也比(bi)小(xiao)(xiao)(xiao)管(guan)(guan)高）。所(suo)以4468比(bi)4110贵了(le)(le)(le)(le)差(cha)不(bu)(bu)多(duo)一(yi)倍(bei)（相(xiang)当于把两个4110封(feng)(feng)装在(zai)一(yi)起的(de)(de)(de)等效效果）。
40N20（40A 200V） 30N03 30N06 40N06 50N06 65N06 75NF75 100N03 3710 3205 3510（75A 100V） 6110（12A 100V） 7610（25A 100V）8A60V 18A60V 22A60V 70A60V 80A60V 13A60V 160A60V 230A60V 9A100V 130A100V
2N60 2N65 3N80 4N60 4N65 5N60 6N65 6N70 7N60 7N65 7N80 8N60 8N80 9N90 10N60 10N65 12N60 12N65 13N50 16N50 18N50 20N50 24N50 730 740 830 840 47A600V
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