MOS管参(can)数-MOS管参(can)数含义(yi)说明(ming)及详解-KIA MOS管
信息来源(yuan)：本站 日期：2018-07-26
MOS管参数说明，在(zai)(zai)使(shi)用(yong) MOS 管设计(ji)开(kai)关(guan)(guan)电(dian)(dian)(dian)源(yuan)或(huo)者马达(da)(da)驱(qu)动电(dian)(dian)(dian)路的(de)(de)(de)(de)时候，一(yi)(yi)般都(dou)要考虑MOS的(de)(de)(de)(de)导(dao)(dao)通(tong)电(dian)(dian)(dian)阻，最大(da)(da)电(dian)(dian)(dian)压等，最大(da)(da)电(dian)(dian)(dian)流等因素。MOS管是(shi)(shi)(shi)FET的(de)(de)(de)(de)一(yi)(yi)种(zhong)，可以被(bei)制造成(cheng)增(zeng)强(qiang)(qiang)型(xing)(xing)或(huo)耗尽型(xing)(xing)，P沟道或(huo)N沟道共4种(zhong)类型(xing)(xing)，一(yi)(yi)般主要应(ying)用(yong)的(de)(de)(de)(de)为增(zeng)强(qiang)(qiang)型(xing)(xing)的(de)(de)(de)(de)NMOS管和增(zeng)强(qiang)(qiang)型(xing)(xing)的(de)(de)(de)(de)PMOS管，所以通(tong)常提到的(de)(de)(de)(de)就是(shi)(shi)(shi)这两种(zhong)。这两种(zhong)增(zeng)强(qiang)(qiang)型(xing)(xing)MOS管，比较常用(yong)的(de)(de)(de)(de)是(shi)(shi)(shi)NMOS。原因是(shi)(shi)(shi)导(dao)(dao)通(tong)电(dian)(dian)(dian)阻小且容(rong)易(yi)制造。所以开(kai)关(guan)(guan)电(dian)(dian)(dian)源(yuan)和马达(da)(da)驱(qu)动的(de)(de)(de)(de)应(ying)用(yong)中，一(yi)(yi)般都(dou)用(yong)NMOS。在(zai)(zai)MOS管内(nei)部，漏极(ji)和源(yuan)极(ji)之(zhi)间会寄(ji)生一(yi)(yi)个二极(ji)管。这个叫体(ti)二极(ji)管，在(zai)(zai)驱(qu)动感性(xing)负载(如马达(da)(da))，这个二极(ji)管很重要，并(bing)且只在(zai)(zai)单个的(de)(de)(de)(de) MOS 管中存在(zai)(zai)此二极(ji)管，在(zai)(zai)集成(cheng)电(dian)(dian)(dian)路芯(xin)片内(nei)部通(tong)常是(shi)(shi)(shi)没有的(de)(de)(de)(de)。
MOS管(guan)的(de)(de)三个管(guan)脚之(zhi)间有寄(ji)生(sheng)电容(rong)存(cun)在，这不是(shi)我(wo)们(men)需(xu)要的(de)(de)，而是(shi)由于(yu)(yu)(yu)制造工(gong)艺(yi)限(xian)制产生(sheng)的(de)(de)。寄(ji)生(sheng)电容(rong)的(de)(de)存(cun)在使得(de)在设计或(huo)选择驱(qu)动(dong)电路的(de)(de)时(shi)候(hou)要麻烦一(yi)些，但没有办法避免(mian)。MOS 管(guan)导(dao)(dao)通(tong)特性(xing)导(dao)(dao)通(tong)的(de)(de)意思(si)是(shi)作为开关，相当于(yu)(yu)(yu)开关闭合。NMOS的(de)(de)特性(xing)，Vgs 大(da)于(yu)(yu)(yu)一(yi)定的(de)(de)值(zhi)就(jiu)会导(dao)(dao)通(tong)，适合用(yong)于(yu)(yu)(yu)源极(ji)接地(di)时(shi)的(de)(de)情况(kuang)(低端驱(qu)动(dong))，只要栅极(ji)电压达到一(yi)定电压（如4V或(huo)10V, 其(qi)他电压，看手(shou)册）就(jiu)可以(yi)了。PMOS的(de)(de)特性(xing)，Vgs小于(yu)(yu)(yu)一(yi)定的(de)(de)值(zhi)就(jiu)会导(dao)(dao)通(tong)，适合用(yong)于(yu)(yu)(yu)源极(ji)接 VCC 时(shi)的(de)(de)情况(kuang)(高端驱(qu)动(dong))。但是(shi)，虽然(ran)PMOS可以(yi)很方便地(di)用(yong)作高端驱(qu)动(dong)，但由于(yu)(yu)(yu)导(dao)(dao)通(tong)电阻大(da)，价(jia)格(ge)贵，替换种类少等原(yuan)因，在高端驱(qu)动(dong)中，通(tong)常还是(shi)使用(yong)NMOS。
不管(guan)是(shi)NMOS还是(shi)PMOS，导(dao)(dao)通(tong)(tong)(tong)后都(dou)有(you)(you)导(dao)(dao)通(tong)(tong)(tong)电(dian)(dian)阻(zu)存在(zai)，因而在(zai)DS间(jian)(jian)(jian)(jian)流(liu)(liu)(liu)过电(dian)(dian)流(liu)(liu)(liu)的(de)(de)同时(shi)(shi)，两端还会(hui)有(you)(you)电(dian)(dian)压(ya)(ya)，这(zhei)样电(dian)(dian)流(liu)(liu)(liu)就会(hui)在(zai)这(zhei)个电(dian)(dian)阻(zu)上消耗能(neng)量，这(zhei)部分(fen)消耗的(de)(de)能(neng)量叫做(zuo)导(dao)(dao)通(tong)(tong)(tong)损(sun)(sun)耗。选(xuan)择导(dao)(dao)通(tong)(tong)(tong)电(dian)(dian)阻(zu)小(xiao)(xiao)(xiao)的(de)(de) MOS 管(guan)会(hui)减(jian)小(xiao)(xiao)(xiao)导(dao)(dao)通(tong)(tong)(tong)损(sun)(sun)耗。现(xian)在(zai)的(de)(de)小(xiao)(xiao)(xiao)功率(lv)(lv)MOS管(guan)导(dao)(dao)通(tong)(tong)(tong)电(dian)(dian)阻(zu)一(yi)般在(zai)几毫(hao)欧，几十毫(hao)欧左右MOS在(zai)导(dao)(dao)通(tong)(tong)(tong)和(he)截止(zhi)的(de)(de)时(shi)(shi)候，一(yi)定不是(shi)在(zai)瞬(shun)间(jian)(jian)(jian)(jian)完成的(de)(de)。MOS两端的(de)(de)电(dian)(dian)压(ya)(ya)有(you)(you)一(yi)个下(xia)降(jiang)(jiang)的(de)(de)过程，流(liu)(liu)(liu)过的(de)(de)电(dian)(dian)流(liu)(liu)(liu)有(you)(you)一(yi)个上升的(de)(de)过程，在(zai)这(zhei)段时(shi)(shi)间(jian)(jian)(jian)(jian)内，MOS管(guan)的(de)(de)损(sun)(sun)失(shi)(shi)是(shi)电(dian)(dian)压(ya)(ya)和(he)电(dian)(dian)流(liu)(liu)(liu)的(de)(de)乘(cheng)积，叫做(zuo)开(kai)(kai)关(guan)损(sun)(sun)失(shi)(shi)。通(tong)(tong)(tong)常开(kai)(kai)关(guan)损(sun)(sun)失(shi)(shi)比导(dao)(dao)通(tong)(tong)(tong)损(sun)(sun)失(shi)(shi)大得多，而且开(kai)(kai)关(guan)频率(lv)(lv)越(yue)快，导(dao)(dao)通(tong)(tong)(tong)瞬(shun)间(jian)(jian)(jian)(jian)电(dian)(dian)压(ya)(ya)和(he)电(dian)(dian)流(liu)(liu)(liu)的(de)(de)乘(cheng)积很(hen)大，造(zao)成的(de)(de)损(sun)(sun)失(shi)(shi)也就很(hen)大。降(jiang)(jiang)低开(kai)(kai)关(guan)时(shi)(shi)间(jian)(jian)(jian)(jian)，可(ke)(ke)以(yi)减(jian)小(xiao)(xiao)(xiao)每(mei)次导(dao)(dao)通(tong)(tong)(tong)时(shi)(shi)的(de)(de)损(sun)(sun)失(shi)(shi)；降(jiang)(jiang)低开(kai)(kai)关(guan)频率(lv)(lv)，可(ke)(ke)以(yi)减(jian)小(xiao)(xiao)(xiao)单位(wei)时(shi)(shi)间(jian)(jian)(jian)(jian)内的(de)(de)开(kai)(kai)关(guan)次数。这(zhei)两种办法都(dou)可(ke)(ke)以(yi)减(jian)小(xiao)(xiao)(xiao)开(kai)(kai)关(guan)损(sun)(sun)失(shi)(shi)。
MOS管(guan)(guan)导通(tong)(tong)不需(xu)要(yao)电(dian)(dian)(dian)(dian)(dian)(dian)流，只要(yao) GS 电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)高(gao)于(yu)一(yi)(yi)定的(de)(de)(de)(de)(de)值，就可以(yi)(yi)了(le)(le)。但是(shi)(shi)，我(wo)们还(hai)需(xu)要(yao)速度。在(zai) MOS管(guan)(guan)的(de)(de)(de)(de)(de)结构中可以(yi)(yi)看(kan)到(dao)，在(zai)GS，GD之间存在(zai)寄生(sheng)电(dian)(dian)(dian)(dian)(dian)(dian)容(rong)，而 MOS管(guan)(guan)的(de)(de)(de)(de)(de)驱(qu)(qu)动(dong)，实(shi)际上就是(shi)(shi)对(dui)电(dian)(dian)(dian)(dian)(dian)(dian)容(rong)的(de)(de)(de)(de)(de)充放电(dian)(dian)(dian)(dian)(dian)(dian)。对(dui)电(dian)(dian)(dian)(dian)(dian)(dian)容(rong)的(de)(de)(de)(de)(de)充电(dian)(dian)(dian)(dian)(dian)(dian)需(xu)要(yao)一(yi)(yi)个电(dian)(dian)(dian)(dian)(dian)(dian)流，因为对(dui)电(dian)(dian)(dian)(dian)(dian)(dian)容(rong)充电(dian)(dian)(dian)(dian)(dian)(dian)瞬(shun)间可以(yi)(yi)把电(dian)(dian)(dian)(dian)(dian)(dian)容(rong)看(kan)成(cheng)短路，所以(yi)(yi)瞬(shun)间电(dian)(dian)(dian)(dian)(dian)(dian)流会(hui)比较(jiao)大。选择/设计 MOS 管(guan)(guan)驱(qu)(qu)动(dong)时第一(yi)(yi)要(yao)注意的(de)(de)(de)(de)(de)是(shi)(shi)可提(ti)供瞬(shun)间短路电(dian)(dian)(dian)(dian)(dian)(dian)流的(de)(de)(de)(de)(de)大小。普遍用(yong)于(yu)高(gao)端驱(qu)(qu)动(dong)的(de)(de)(de)(de)(de) NMOS，导通(tong)(tong)时需(xu)要(yao)是(shi)(shi)栅极电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)大于(yu)源极电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)。而高(gao)端驱(qu)(qu)动(dong)的(de)(de)(de)(de)(de) MOS管(guan)(guan)导通(tong)(tong)时源极电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)与(yu)漏极电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(VCC)相(xiang)同(tong)，所以(yi)(yi)这时栅极电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)要(yao)比 VCC 大(4V 或 10V 其他电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)，看(kan)手(shou)册)。如果在(zai)同(tong)一(yi)(yi)个系统(tong)里，要(yao)得到(dao)比 VCC 大的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)压(ya)，就要(yao)专门的(de)(de)(de)(de)(de)升压(ya)电(dian)(dian)(dian)(dian)(dian)(dian)路了(le)(le)，很多(duo)马达驱(qu)(qu)动(dong)器都(dou)集成(cheng)了(le)(le)电(dian)(dian)(dian)(dian)(dian)(dian)荷泵，要(yao)注意的(de)(de)(de)(de)(de)是(shi)(shi)应该选择合适的(de)(de)(de)(de)(de)外接电(dian)(dian)(dian)(dian)(dian)(dian)容(rong)，以(yi)(yi)得到(dao)足够(gou)的(de)(de)(de)(de)(de)短路电(dian)(dian)(dian)(dian)(dian)(dian)流去驱(qu)(qu)动(dong)MOS管(guan)(guan)。
1、极限参数：
ID:最大(da)(da)漏源电流(liu)。是指(zhi)场效应管(guan)正(zheng)常工作时，漏源间所允许通(tong)过的(de)最大(da)(da)电流(liu)。场效应管(guan)的(de)工作电流(liu)不应超过 ID 。此(ci)参数(shu)会随结温度的(de)上(shang)升而有所减额
IDM:最大脉冲漏源电流。此参数会随结温(wen)度的上升而有所减额
PD：最大(da)耗(hao)散功(gong)(gong)率。是指场效应(ying)管(guan)性能不(bu)变坏时所允(yun)许的最大(da)漏(lou)源耗(hao)散功(gong)(gong)率。使用时，场效应(ying)管(guan)实际(ji)功(gong)(gong)耗(hao)应(ying)小于 PDSM 并(bing)留有一(yi)定余(yu)量。此参数一(yi)般(ban)会随结温度的上升有所减额
VGS：最大栅源电压
Tj：最大工(gong)作结温(wen)(wen)。通常为 150 ℃ 或(huo) 175 ℃ ，器件(jian)设计的工(gong)作条件(jian)下须确(que)应避(bi)免超过这个(ge)温(wen)(wen)度，并留(liu)有一定裕(yu)量
TSTG：存储温(wen)度范围
2、静态参数
V(BR)DSS：漏源击穿(chuan)电(dian)(dian)压(ya)(ya)。是指栅源电(dian)(dian)压(ya)(ya)VGS 为(wei) 0 时(shi)，场效应管正常工作(zuo)所能(neng)承受的最大漏源电(dian)(dian)压(ya)(ya)。这(zhei)是一项(xiang)极限参(can)(can)数(shu)，加在场效应管上的工作(zuo)电(dian)(dian)压(ya)(ya)必须小于 V(BR)DSS 。 它具有正温(wen)(wen)度(du)特性。故应以此参(can)(can)数(shu)在低温(wen)(wen)条件(jian)下的值作(zuo)为(wei)安全考(kao)虑。△ V(BR)DSS/ △ Tj ：漏源击穿(chuan)电(dian)(dian)压(ya)(ya)的温(wen)(wen)度(du)系数(shu)，一般为(wei) 0.1V/ ℃
RDS(on)：在特定的(de) VGS （一般为 10V）、结(jie)温(wen)及(ji)漏极电流的(de)条(tiao)件下， MOSFET 导通时(shi)漏源间的(de)最(zui)大(da)阻抗。它是一个非常重(zhong)要的(de)参数，决定了 MOSFET 导通时(shi)的(de)消耗(hao)功率。此(ci)参数一般会(hui)随(sui)结(jie)温(wen)度的(de)上(shang)升而有所(suo)增大(da)。 故应以此(ci)参数在最(zui)高工作(zuo)结(jie)温(wen)条(tiao)件下的(de)值作(zuo)为损耗(hao)及(ji)压降(jiang)计算
VGS(th)：开启(qi)电(dian)压(ya)(ya)（阀值电(dian)压(ya)(ya)）。当外加栅极控制电(dian)压(ya)(ya) VGS 超过 VGS(th) 时(shi)，漏区和源(yuan)区的(de)表面反型层形成了(le)连(lian)接的(de)沟道(dao)。应用中，常将漏极短接条件下 ID 等于(yu) 1 毫安(an)时(shi)的(de)栅极电(dian)压(ya)(ya)称为开启(qi)电(dian)压(ya)(ya)。此参数一般会随结(jie)温度的(de)上升而(er)有所降低
IDSS：饱(bao)和漏(lou)源(yuan)电(dian)流(liu)，栅极电(dian)压(ya) VGS=0 、 VDS 为一(yi)定值时(shi)的漏(lou)源(yuan)电(dian)流(liu)。一(yi)般在微安(an)级
IGSS：栅源驱(qu)动电流或(huo)反向电流。由于MOSFET输入阻抗很大，IGSS 一(yi)般在(zai)纳安级(ji)
3、动态参数
gfs ：跨导(dao)。是指(zhi)漏极(ji)(ji)输出电(dian)(dian)流的变化(hua)量与栅源(yuan)(yuan)电(dian)(dian)压(ya)(ya)变化(hua)量之比，是栅源(yuan)(yuan)电(dian)(dian)压(ya)(ya)对(dui)漏极(ji)(ji)电(dian)(dian)流控制能力(li)大小的量度。 gfs 与 VGS 的转移关系注意看图表
Qg ：栅极总充电(dian)电(dian)量(liang)。 MOSFET 是(shi)电(dian)压型(xing)驱(qu)动(dong)器件(jian)，驱(qu)动(dong)的(de)过(guo)程就是(shi)栅极电(dian)压的(de)建立过(guo)程，这是(shi)通过(guo)对栅源(yuan)及栅漏之间的(de)电(dian)容充电(dian)来实现(xian)的(de)，下面将有此方(fang)面的(de)详(xiang)细论述(shu)
Qgs ：栅源充电电量
Qgd ：栅漏(lou)充电（考虑到 Miller 效(xiao)应(ying)）电量
Td(on) ：导通延迟时间(jian)。从(cong)有(you)输入电压上升到(dao) 10% 开始到(dao) VDS 下降到(dao)其幅值 90% 的(de)时间(jian)
Tr ：上(shang)升时间(jian)，输出(chu)电压 VDS 从 90% 下(xia)降到(dao)其幅值 10% 的时间(jian)
Td(off) ：关断(duan)延迟时(shi)间，输入电压下(xia)降到(dao)(dao) 90% 开始到(dao)(dao) VDS 上升(sheng)到(dao)(dao)其关断(duan)电压时(shi) 10% 的时(shi)间
Tf ：下降时(shi)间(jian)，输出电压 VDS 从 10% 上升到其幅(fu)值 90% 的(de)时(shi)间(jian)
Ciss ：输入电(dian)容， Ciss= CGD + CGS （ CDS 短路）
Coss ：输出电容，Coss = CDS +CGD
Crss ：反向传(chuan)输电容，Crss = CGD
MOS管的极间电(dian)容，MOSFET 之感生电(dian)(dian)(dian)容(rong)(rong)被大多数制造(zao)厂商分成输(shu)入电(dian)(dian)(dian)容(rong)(rong)，输(shu)出电(dian)(dian)(dian)容(rong)(rong)以及反馈电(dian)(dian)(dian)容(rong)(rong)。所引述(shu)的(de)(de)(de)值(zhi)是(shi)在漏(lou)源电(dian)(dian)(dian)压为(wei)某固定值(zhi)的(de)(de)(de)情况下。此(ci)些(xie)电(dian)(dian)(dian)容(rong)(rong)随漏(lou)源电(dian)(dian)(dian)压的(de)(de)(de)变化而(er)变化，电(dian)(dian)(dian)容(rong)(rong)数值(zhi)的(de)(de)(de)作用是(shi)有限的(de)(de)(de)。输(shu)入电(dian)(dian)(dian)容(rong)(rong)值(zhi)只给出一个大概的(de)(de)(de)驱动电(dian)(dian)(dian)路所需的(de)(de)(de)充(chong)电(dian)(dian)(dian)说明，而(er)栅极充(chong)电(dian)(dian)(dian)信息更为(wei)有用。它表(biao)明为(wei)达到一个特定的(de)(de)(de)栅源电(dian)(dian)(dian)压栅极所必须充(chong)的(de)(de)(de)电(dian)(dian)(dian)量。
4、雪崩击穿特性参数
这些参数是 MOSFET 在关断状态能承受过(guo)压(ya)能力(li)的指标。如(ru)果(guo)电(dian)(dian)压(ya)超过(guo)漏源(yuan)极(ji)限电(dian)(dian)压(ya)将导(dao)致器件处在雪崩状态
EAS：单次(ci)脉(mai)冲雪(xue)崩击穿能(neng)量。这是个极限参数，说明(ming) MOSFET 所能(neng)承受的最大雪(xue)崩击穿能(neng)量
IAR：雪崩电(dian)流
EAR：重复雪崩击穿能量
5、体内二极管参数(shu)
IS：连续最大续流电(dian)流（从源极）
ISM：脉冲最大(da)续(xu)流电流（从源极）
VSD：正向导通压降
Trr：反向(xiang)恢复时间
Qrr：反向恢复充电电量
Ton：正(zheng)向导(dao)通(tong)时间。（基本可以(yi)忽(hu)略不计(ji)）
MOSFET开通时间和关断时间定义
（一）在应用过程中，以(yi)下几个特性是(shi)经常需(xu)要考虑的：
1、V（BR）DSS 的(de)(de)正(zheng)温(wen)(wen)度系(xi)数特性(xing)(xing)。这(zhei)一(yi)有异于双(shuang)极(ji)型(xing)器件的(de)(de)特性(xing)(xing)使得其(qi)在正(zheng)常工(gong)作温(wen)(wen)度升高(gao)后变得更可靠。但(dan)也需要留意其(qi)在低温(wen)(wen)冷(leng)启机时的(de)(de)可靠性(xing)(xing)。
2、 V（GS）th 的负温(wen)度系数特(te)(te)性。栅(zha)极门(men)(men)槛电(dian)位随着结温(wen)的升高会有(you)一(yi)定的减小。一(yi)些辐射也会使得(de)此(ci)门(men)(men)槛电(dian)位减小，甚至可能(neng)低(di)于0电(dian)位。这(zhei)一(yi)特(te)(te)性需(xu)要工程师注意MOSFET在此(ci)些情况下的干(gan)扰(rao)误触(chu)发(fa)，尤(you)其是低(di)门(men)(men)槛电(dian)位的MOSFET应用。因这(zhei)一(yi)特(te)(te)性，有(you)时需(xu)要将栅(zha)极驱动的关闭电(dian)位设计成负值(zhi)（指 N 型，P 型类推(tui)）以(yi)避(bi)免干(gan)扰(rao)误触(chu)发(fa)。
3、VDSon/RDSon 的(de)(de)正温(wen)度(du)系数特(te)(te)性。VDSon/RDSon 随着结温(wen)的(de)(de)升(sheng)高而(er)略有增大(da)的(de)(de)特(te)(te)性使(shi)(shi)(shi)得(de)MOSFET的(de)(de)直接并联使(shi)(shi)(shi)用变得(de)可能。双极(ji)型器件在此(ci)方面(mian)恰(qia)好相反，故其并联使(shi)(shi)(shi)用变得(de)相当复(fu)杂(za)化。RDSon也会随着ID的(de)(de)增大(da)而(er)略有增大(da)，这一(yi)(yi)特(te)(te)性以及(ji)结和面(mian)RDSon正温(wen)度(du)特(te)(te)性使(shi)(shi)(shi)得(de)MOSFET避免了象双极(ji)型器件那(nei)样(yang)的(de)(de)二次击(ji)穿。 但(dan)要(yao)注意(yi)(yi)此(ci)特(te)(te)性效果相当有限，在并联使(shi)(shi)(shi)用、推挽使(shi)(shi)(shi)用或其它应用时不可完全(quan)依赖(lai)此(ci)特(te)(te)性的(de)(de)自我调节，仍需要(yao)一(yi)(yi)些根本措施。这一(yi)(yi)特(te)(te)性也说(shuo)明了导(dao)通损耗会在高温(wen)时变得(de)更大(da)。故在损耗计算时应特(te)(te)别留意(yi)(yi)参数的(de)(de)选(xuan)择(ze)。
4、ID的负温(wen)度系(xi)数特(te)性，MOSFET参数理(li)解(jie)及(ji)其主要特(te)性ID会随着(zhe)结温(wen)度升高(gao)而有相当大的减额。这(zhei)一特(te)性使得在设(she)计时往往需要考虑的是其在高(gao)温(wen)时的ID参数。
5、雪(xue)(xue)崩能(neng)力(li)IER/EAS的(de)(de)(de)负温度(du)系(xi)数特性。结温度(du)升高后，虽(sui)然会使得MOSFET具有更大(da)的(de)(de)(de) V（BR）DSS ，但是(shi)要注意EAS会有相(xiang)当(dang)大(da)的(de)(de)(de)减额(e)。也就是(shi)说高温条件下(xia)其承受雪(xue)(xue)崩的(de)(de)(de)能(neng)力(li)相(xiang)对于常(chang)温而言要弱很多(duo)。
6、MOSFET 的体(ti)(ti)内(nei)寄生(sheng)二极管(guan)(guan)导通(tong)能(neng)力及反向恢复表现并(bing)(bing)不比普通(tong)二极管(guan)(guan)好。在(zai)设计中并(bing)(bing)不期(qi)望(wang)利(li)用其作为回(hui)路主要(yao)的电(dian)流载体(ti)(ti)。往(wang)往(wang)会串接阻拦二极管(guan)(guan)使体(ti)(ti)内(nei)寄生(sheng)二极管(guan)(guan)无效，并(bing)(bing)通(tong)过(guo)额外并(bing)(bing)联二极管(guan)(guan)构成回(hui)路电(dian)载体(ti)(ti)。但在(zai)同步整流等短时间导通(tong)或一(yi)些小(xiao)电(dian)流要(yao)求的情况(kuang)下是可以(yi)考虑将其作为载体(ti)(ti)的。
7、漏极电位的快速(su)上升有可能会发生栅极驱动的假触发现(xian)象 (spurious-trigger) ，故在很(hen)大的 dVDS/dt 应用场(chang)合（高频快速(su)开关(guan)电路）需要考虑这方面的可能性(xing)。
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