MOS管(guan)有哪些分(fen)类-MOS管(guan)的分(fen)类有什么具体区(qu)别-KIA MOS管(guan)
信(xin)息来源：本站 日期(qi)：2018-08-23
MOSFET管(guan)(guan)是FET的(de)一种（另一种是JFET），可以被制构成增(zeng)强(qiang)型或耗尽(jin)型，P沟(gou)道(dao)(dao)或N沟(gou)道(dao)(dao)共(gong)4种类型，但理(li)论应用的(de)只需增(zeng)强(qiang)型的(de)N沟(gou)道(dao)(dao)MOS管(guan)(guan)和增(zeng)强(qiang)型的(de)P沟(gou)道(dao)(dao)MOS管(guan)(guan)，所以通常提到NMOS，或者PMOS指的(de)就是这两(liang)种。场(chang)(chang)效应管(guan)(guan)分(fen)为结型场(chang)(chang)效应管(guan)(guan)（JFET）和绝缘栅场(chang)(chang)效应管(guan)(guan)（MOS管(guan)(guan)）两(liang)大类。
结型(xing)(xing)场(chang)(chang)效应(ying)管(guan)(guan)的(de)分类(lei)：结型(xing)(xing)场(chang)(chang)效应(ying)管(guan)(guan)有两种结构形式(shi)，它(ta)们是N沟道结型(xing)(xing)场(chang)(chang)效应(ying)管(guan)(guan)和P沟道结型(xing)(xing)场(chang)(chang)效应(ying)管(guan)(guan)。
结型场效(xiao)应(ying)管(guan)也具有三个(ge)电(dian)(dian)极(ji)(ji)(ji)，它们(men)是(shi)(shi)(shi)：栅(zha)(zha)极(ji)(ji)(ji)；漏极(ji)(ji)(ji)；源(yuan)(yuan)极(ji)(ji)(ji)。电(dian)(dian)路(lu)符号中栅(zha)(zha)极(ji)(ji)(ji)的(de)箭头方向(xiang)(xiang)可理解为两个(ge)PN结的(de)正向(xiang)(xiang)导(dao)电(dian)(dian)方向(xiang)(xiang)。2、结型场效(xiao)应(ying)管(guan)的(de)工作原(yuan)理(以(yi)N沟道(dao)结型场效(xiao)应(ying)管(guan)为例)，N沟道(dao)结构型场效(xiao)应(ying)管(guan)的(de)结构及符号，由于PN结中的(de)载流子已经(jing)耗尽(jin)(jin)，故PN基本上是(shi)(shi)(shi)不导(dao)电(dian)(dian)的(de)，形成(cheng)了所谓(wei)耗尽(jin)(jin)区，当漏极(ji)(ji)(ji)电(dian)(dian)源(yuan)(yuan)电(dian)(dian)压(ya)(ya)ED一定时，如(ru)果栅(zha)(zha)极(ji)(ji)(ji)电(dian)(dian)压(ya)(ya)越负，PN结交界面所形成(cheng)的(de)耗尽(jin)(jin)区就越厚，则漏、源(yuan)(yuan)极(ji)(ji)(ji)之间导(dao)电(dian)(dian)的(de)沟道(dao)越窄，漏极(ji)(ji)(ji)电(dian)(dian)流ID就愈小；反之，如(ru)果栅(zha)(zha)极(ji)(ji)(ji)电(dian)(dian)压(ya)(ya)没有那么(me)负，则沟道(dao)变(bian)宽，ID变(bian)大，所以(yi)用栅(zha)(zha)极(ji)(ji)(ji)电(dian)(dian)压(ya)(ya)EG可以(yi)控(kong)制漏极(ji)(ji)(ji)电(dian)(dian)流ID的(de)变(bian)化，就是(shi)(shi)(shi)说，场效(xiao)应(ying)管(guan)是(shi)(shi)(shi)电(dian)(dian)压(ya)(ya)控(kong)制元件。
1、绝缘(yuan)栅场(chang)效应管(guan)（MOS管(guan)）的分类(lei)：绝缘(yuan)栅场(chang)效应管(guan)也有(you)两(liang)种(zhong)(zhong)结构形式，它们是N沟(gou)道(dao)型(xing)和(he)P沟(gou)道(dao)型(xing)。无论是什么沟(gou)道(dao)，它们又分为增强型(xing)和(he)耗尽型(xing)两(liang)种(zhong)(zhong)。
2、它是由金属(shu)、氧化物和半(ban)(ban)导体所组成(cheng)，所以又称(cheng)为金属(shu)—氧化物—半(ban)(ban)导体场效应管(guan)，简称(cheng)MOS场效应管(guan)。
3、绝缘(yuan)栅(zha)型(xing)场效(xiao)(xiao)应管的(de)(de)工作(zuo)原理(以(yi)N沟道(dao)增强型(xing)MOS场效(xiao)(xiao)应管)它是利用UGS来(lai)控(kong)制(zhi)“感(gan)应电(dian)(dian)(dian)(dian)荷”的(de)(de)多少，以(yi)改变(bian)由这些“感(gan)应电(dian)(dian)(dian)(dian)荷”形成的(de)(de)导(dao)电(dian)(dian)(dian)(dian)沟道(dao)的(de)(de)状况，然后达到控(kong)制(zhi)漏极(ji)电(dian)(dian)(dian)(dian)流的(de)(de)目的(de)(de)。在制(zhi)造(zao)管子(zi)时，通过(guo)工艺使(shi)绝缘(yuan)层(ceng)中出(chu)现大量正离子(zi)，故在交界面的(de)(de)另(ling)一(yi)侧能感(gan)应出(chu)较多的(de)(de)负电(dian)(dian)(dian)(dian)荷，这些负电(dian)(dian)(dian)(dian)荷把(ba)高(gao)渗(shen)杂质的(de)(de)N区接通，形成了(le)导(dao)电(dian)(dian)(dian)(dian)沟道(dao)，即使(shi)在VGS=0时也(ye)有较大的(de)(de)漏极(ji)电(dian)(dian)(dian)(dian)流ID。当栅(zha)极(ji)电(dian)(dian)(dian)(dian)压改变(bian)时，沟道(dao)内被感(gan)应的(de)(de)电(dian)(dian)(dian)(dian)荷量也(ye)改变(bian)，导(dao)电(dian)(dian)(dian)(dian)沟道(dao)的(de)(de)宽窄(zhai)也(ye)随之而(er)变(bian)，因而(er)漏极(ji)电(dian)(dian)(dian)(dian)流ID随着栅(zha)极(ji)电(dian)(dian)(dian)(dian)压的(de)(de)变(bian)化(hua)而(er)变(bian)化(hua)。场效应管的工作方式(shi)有(you)两种(zhong)：当栅(zha)(zha)压(ya)为零(ling)时有(you)较大漏极电(dian)流的称(cheng)为耗(hao)散型；当栅(zha)(zha)压(ya)为零(ling)，漏极电(dian)流也(ye)为零(ling)，必须再加一(yi)定的栅(zha)(zha)压(ya)之后(hou)才(cai)有(you)漏极电(dian)流的称(cheng)为增强型。
对(dui)于耗尽型的(de)JFET，在平衡(heng)时(不加电(dian)压(ya)(ya)(ya)(ya))时，沟道(dao)(dao)(dao)电(dian)阻最(zui)小；电(dian)压(ya)(ya)(ya)(ya)Vds和Vgs都(dou)可改(gai)变(bian)栅p-n结(jie)势垒的(de)宽度(du)(du)，并因此改(gai)变(bian)沟道(dao)(dao)(dao)的(de)长度(du)(du)和厚(hou)度(du)(du)（栅极电(dian)压(ya)(ya)(ya)(ya)使(shi)沟道(dao)(dao)(dao)厚(hou)度(du)(du)均(jun)匀变(bian)化，源漏电(dian)压(ya)(ya)(ya)(ya)使(shi)沟道(dao)(dao)(dao)厚(hou)度(du)(du)不均(jun)匀变(bian)化），使(shi)沟道(dao)(dao)(dao)电(dian)阻变(bian)化，从(cong)而(er)导(dao)致Ids变(bian)化，以实现对(dui)输入信号的(de)放大。
当Vds较低(di)时(shi)(shi)，JFET的(de)(de)沟(gou)道(dao)呈现(xian)为(wei)电(dian)(dian)阻特性(xing)，是(shi)所谓(wei)电(dian)(dian)阻工作区(qu)，这(zhei)(zhei)时(shi)(shi)漏(lou)极电(dian)(dian)流(liu)(liu)基本上(shang)随着(zhe)电(dian)(dian)压(ya)Vds的(de)(de)增(zeng)大(da)(da)而(er)线性(xing)上(shang)升，但(dan)漏(lou)极电(dian)(dian)流(liu)(liu)随着(zhe)栅极电(dian)(dian)压(ya)Vgs的(de)(de)增(zeng)大(da)(da)而(er)平方(fang)式(shi)增(zeng)大(da)(da)；进一(yi)(yi)步(bu)增(zeng)大(da)(da)Vds时(shi)(shi)，沟(gou)道(dao)即首先在漏(lou)极一(yi)(yi)端被夹断(duan)(duan)，则漏(lou)极电(dian)(dian)流(liu)(liu)达(da)到最(zui)大(da)(da)而(er)饱(bao)和（饱(bao)和电(dian)(dian)流(liu)(liu)搜大(da)(da)小决(jue)定(ding)于(yu)没有被夹断(duan)(duan)的(de)(de)沟(gou)道(dao)的(de)(de)电(dian)(dian)阻），这(zhei)(zhei)就是(shi)JFET的(de)(de)饱(bao)和放(fang)大(da)(da)区(qu)，这(zhei)(zhei)时(shi)(shi)JFET呈现(xian)为(wei)一(yi)(yi)个(ge)恒流(liu)(liu)源(yuan)。JFET的放大(da)作用(yong)可用(yong)所谓(wei)跨(kua)导gm = δIds / δVgsS ](Vds =常数(shu)) 来(lai)表示，要求跨(kua)导越大(da)越好(hao)。
JFET的(de)(de)(de)(de)特点是(shi)(shi)(shi)：①是(shi)(shi)(shi)电(dian)压控制器件(jian)，则不需要大(da)的(de)(de)(de)(de)信(xin)号功率。②是(shi)(shi)(shi)多(duo)数(shu)载流(liu)(liu)子(zi)(zi)导电(dian)的(de)(de)(de)(de)器件(jian)，是(shi)(shi)(shi)所谓单极晶体管(guan)，则无少子(zi)(zi)存储与扩(kuo)散问(wen)题，速(su)度高(gao)(gao)，噪(zao)音(yin)系(xi)数(shu)低(di)；而且漏极电(dian)流(liu)(liu)Ids的(de)(de)(de)(de)温(wen)(wen)度关(guan)(guan)系(xi)决定于载流(liu)(liu)子(zi)(zi)迁(qian)移(yi)率的(de)(de)(de)(de)温(wen)(wen)度关(guan)(guan)系(xi)，则电(dian)流(liu)(liu)具有(you)负的(de)(de)(de)(de)温(wen)(wen)度系(xi)数(shu)，器件(jian)具有(you)自(zi)我保护(hu)的(de)(de)(de)(de)功能。③输(shu)入端是(shi)(shi)(shi)反偏的(de)(de)(de)(de)p-n结(jie), 则输(shu)入阻(zu)抗大(da), 便于匹配。④输(shu)出(chu)阻(zu)抗也(ye)很大(da), 呈(cheng)现为恒流(liu)(liu)源，这与BJT大(da)致相同。⑤JFET一(yi)般是(shi)(shi)(shi)耗尽(jin)型的(de)(de)(de)(de)，但若采用(yong)高(gao)(gao)阻(zu)衬底, 也(ye)可得到(dao)增强型JFET(增强型JFET在高(gao)(gao)速(su)、低(di)功耗电(dian)路中(zhong)很有(you)应(ying)用(yong)价(jia)值(zhi))；但是(shi)(shi)(shi)一(yi)般只有(you)短(duan)沟道(dao)(dao)的(de)(de)(de)(de)JFET才是(shi)(shi)(shi)能很好工作的(de)(de)(de)(de)增强型器件(jian)。实际上，静电(dian)感应(ying)晶体管(guan)也(ye)就(jiu)是(shi)(shi)(shi)一(yi)种(zhong)短(duan)沟道(dao)(dao)的(de)(de)(de)(de)JFET。⑥沟道(dao)(dao)是(shi)(shi)(shi)处在半(ban)导体内(nei)部，则沟道(dao)(dao)中(zhong)的(de)(de)(de)(de)载流(liu)(liu)子(zi)(zi)不受半(ban)导体表面的(de)(de)(de)(de)影响(xiang)，因此迁(qian)移(yi)率较(jiao)高(gao)(gao)、噪(zao)声较(jiao)低(di)。
图(tu)1是N沟道增强型MOS管(guan)的(de)结构示意图(tu)和符号。它是在(zai)一(yi)块P型硅衬底上，扩散两个(ge)高(gao)浓(nong)度掺杂的(de)N+区(qu)，在(zai)两个(ge)N+区(qu)之间的(de)硅表面上制作一(yi)层很薄的(de)二氧化硅（SiO2）绝缘(yuan)层，然后在(zai)SiO2和两个(ge)N型区(qu)表面上分别引(yin)出三个(ge)电(dian)极，称(cheng)为源极s、栅(zha)极g和漏极d。在(zai)其图(tu)形符号中，箭(jian)头(tou)表示漏极电(dian)流的(de)实(shi)际方向。
绝缘栅场效应(ying)管(guan)的(de)导(dao)电(dian)(dian)机理是，利用UGS 控制"感应(ying)电(dian)(dian)荷"的(de)多少来改变导(dao)电(dian)(dian)沟(gou)道(dao)的(de)宽窄，从而控制漏(lou)(lou)极电(dian)(dian)流ID。若(ruo)UGS=0时(shi)，源(yuan)、漏(lou)(lou)之(zhi)间不存(cun)在导(dao)电(dian)(dian)沟(gou)道(dao)的(de)为(wei)增强(qiang)型(xing)MOS管(guan)，UGS=0 时(shi)，漏(lou)(lou)、源(yuan)之(zhi)间存(cun)在导(dao)电(dian)(dian)沟(gou)道(dao)的(de)为(wei)耗尽型(xing)MOS管(guan)。
图(tu)2中衬底为(wei)P型(xing)(xing)(xing)(xing)半(ban)(ban)导(dao)(dao)体(ti)(ti)，在它的(de)(de)(de)上面(mian)是(shi)一层(ceng)(ceng)(ceng)(ceng)(ceng)SiO2薄(bo)膜、在SiO2薄(bo)膜上盖一层(ceng)(ceng)(ceng)(ceng)(ceng)金(jin)属(shu)铝，如果在金(jin)属(shu)铝层(ceng)(ceng)(ceng)(ceng)(ceng)和半(ban)(ban)导(dao)(dao)体(ti)(ti)之(zhi)间加电(dian)(dian)压UGS，则(ze)金(jin)属(shu)铝与(yu)半(ban)(ban)导(dao)(dao)体(ti)(ti)之(zhi)间产(chan)(chan)生一个(ge)垂(chui)直于半(ban)(ban)导(dao)(dao)体(ti)(ti)表(biao)(biao)(biao)面(mian)的(de)(de)(de)电(dian)(dian)场(chang)(chang)(chang)(chang)，在这(zhei)一电(dian)(dian)场(chang)(chang)(chang)(chang)作用下，P型(xing)(xing)(xing)(xing)硅表(biao)(biao)(biao)面(mian)的(de)(de)(de)多(duo)数载(zai)流(liu)(liu)子(zi)-空(kong)(kong)穴(xue)(xue)受到排斥(chi)(chi)，使硅片(pian)表(biao)(biao)(biao)面(mian)产(chan)(chan)生一层(ceng)(ceng)(ceng)(ceng)(ceng)缺乏(fa)载(zai)流(liu)(liu)子(zi)的(de)(de)(de)薄(bo)层(ceng)(ceng)(ceng)(ceng)(ceng)。同时(shi)在电(dian)(dian)场(chang)(chang)(chang)(chang)作用下，P型(xing)(xing)(xing)(xing)半(ban)(ban)导(dao)(dao)体(ti)(ti)中的(de)(de)(de)少数载(zai)流(liu)(liu)子(zi)-电(dian)(dian)子(zi)被(bei)吸引到半(ban)(ban)导(dao)(dao)体(ti)(ti)的(de)(de)(de)表(biao)(biao)(biao)面(mian)，并(bing)被(bei)空(kong)(kong)穴(xue)(xue)所俘获而(er)形(xing)(xing)成负离(li)子(zi)，组(zu)成不可(ke)移动的(de)(de)(de)空(kong)(kong)间电(dian)(dian)荷(he)层(ceng)(ceng)(ceng)(ceng)(ceng)（称耗(hao)(hao)尽(jin)(jin)层(ceng)(ceng)(ceng)(ceng)(ceng)又叫受主离(li)子(zi)层(ceng)(ceng)(ceng)(ceng)(ceng)）。UGS愈大，电(dian)(dian)场(chang)(chang)(chang)(chang)排斥(chi)(chi)硅表(biao)(biao)(biao)面(mian)层(ceng)(ceng)(ceng)(ceng)(ceng)中的(de)(de)(de)空(kong)(kong)穴(xue)(xue)愈多(duo)，则(ze)耗(hao)(hao)尽(jin)(jin)层(ceng)(ceng)(ceng)(ceng)(ceng)愈宽，且UGS愈大，电(dian)(dian)场(chang)(chang)(chang)(chang)愈强；当UGS 增大到某一栅(zha)源(yuan)电(dian)(dian)压值(zhi)VT（叫临界电(dian)(dian)压或开(kai)启(qi)电(dian)(dian)压）时(shi)，则(ze)电(dian)(dian)场(chang)(chang)(chang)(chang)在排斥(chi)(chi)半(ban)(ban)导(dao)(dao)体(ti)(ti)表(biao)(biao)(biao)面(mian)层(ceng)(ceng)(ceng)(ceng)(ceng)的(de)(de)(de)多(duo)数载(zai)流(liu)(liu)子(zi)-空(kong)(kong)穴(xue)(xue)形(xing)(xing)成耗(hao)(hao)尽(jin)(jin)层(ceng)(ceng)(ceng)(ceng)(ceng)之(zhi)后，就会吸引少数载(zai)流(liu)(liu)子(zi)-电(dian)(dian)子(zi)，继而(er)在表(biao)(biao)(biao)面(mian)层(ceng)(ceng)(ceng)(ceng)(ceng)内形(xing)(xing)成电(dian)(dian)子(zi)的(de)(de)(de)积累，从而(er)使原(yuan)来(lai)为(wei)空(kong)(kong)穴(xue)(xue)占多(duo)数的(de)(de)(de)P型(xing)(xing)(xing)(xing)半(ban)(ban)导(dao)(dao)体(ti)(ti)表(biao)(biao)(biao)面(mian)形(xing)(xing)成了N型(xing)(xing)(xing)(xing)薄(bo)层(ceng)(ceng)(ceng)(ceng)(ceng)。由(you)于与(yu)P型(xing)(xing)(xing)(xing)衬底的(de)(de)(de)导(dao)(dao)电(dian)(dian)类型(xing)(xing)(xing)(xing)相(xiang)反，故称为(wei)反型(xing)(xing)(xing)(xing)层(ceng)(ceng)(ceng)(ceng)(ceng)。在反型(xing)(xing)(xing)(xing)层(ceng)(ceng)(ceng)(ceng)(ceng)下才是(shi)负离(li)子(zi)组(zu)成的(de)(de)(de)耗(hao)(hao)尽(jin)(jin)层(ceng)(ceng)(ceng)(ceng)(ceng)。这(zhei)一N型(xing)(xing)(xing)(xing)电(dian)(dian)子(zi)层(ceng)(ceng)(ceng)(ceng)(ceng)，把原(yuan)来(lai)被(bei)PN结高阻层(ceng)(ceng)(ceng)(ceng)(ceng)隔(ge)开(kai)的(de)(de)(de)源(yuan)区和漏区连接起来(lai)，形(xing)(xing)成导(dao)(dao)电(dian)(dian)沟道。
用(yong)图2所示电(dian)(dian)路来分析(xi)栅(zha)源(yuan)(yuan)(yuan)(yuan)电(dian)(dian)压(ya)UGS控制导电(dian)(dian)沟(gou)道(dao)宽窄，改变漏极(ji)(ji)电(dian)(dian)流(liu)ID 的(de)关系(xi)：当UGS=0时(shi)，因没有(you)(you)电(dian)(dian)场(chang)作(zuo)用(yong)，不(bu)能(neng)形(xing)成导电(dian)(dian)沟(gou)道(dao)，这(zhei)时(shi)虽然漏源(yuan)(yuan)(yuan)(yuan)间(jian)外(wai)接有(you)(you)ED电(dian)(dian)源(yuan)(yuan)(yuan)(yuan)，但由于漏源(yuan)(yuan)(yuan)(yuan)间(jian)被P型衬底所隔开，漏源(yuan)(yuan)(yuan)(yuan)之间(jian)存在(zai)两个PN结(jie)，因此只能(neng)流(liu)过很小的(de)反向(xiang)电(dian)(dian)流(liu)，ID ≈0；当UGS>0并逐渐增(zeng)加(jia)到VT 时(shi)，反型层(ceng)开始形(xing)成，漏源(yuan)(yuan)(yuan)(yuan)之间(jian)被N沟(gou)道(dao)连成一体。这(zhei)时(shi)在(zai)正(zheng)的(de)漏源(yuan)(yuan)(yuan)(yuan)电(dian)(dian)压(ya)UDS作(zuo)用(yong)下；N沟(gou)道(dao)内的(de)多(duo)子(zi)（电(dian)(dian)子(zi)）产生漂(piao)移(yi)运动，从(cong)源(yuan)(yuan)(yuan)(yuan)极(ji)(ji)流(liu)向(xiang)漏极(ji)(ji)，形(xing)成漏极(ji)(ji)电(dian)(dian)流(liu)ID。显然，UGS愈(yu)高，电(dian)(dian)场(chang)愈(yu)强(qiang)，表面(mian)感应出的(de)电(dian)(dian)子(zi)愈(yu)多(duo)，N型沟(gou)道(dao)愈(yu)宽沟(gou)道(dao)电(dian)(dian)阻(zu)愈(yu)小，ID愈(yu)大。
Idss—饱和漏(lou)源(yuan)电流。是(shi)指结型或耗尽型绝缘栅场效应(ying)管中，栅极(ji)电压UGS=0时的漏(lou)源(yuan)电流。
Up—夹断(duan)电压(ya)。是指(zhi)结型或(huo)耗尽型绝(jue)缘(yuan)栅场(chang)效应管中，使漏源间刚截止(zhi)时的(de)栅极电压(ya)。
Ut—开启(qi)电(dian)压(ya)。是指(zhi)增强型绝缘栅场效(xiao)管中，使漏源间刚导通(tong)时的栅极电(dian)压(ya)。
gM—跨导。是表(biao)示栅源电(dian)压(ya)(ya)UGS—对漏极(ji)电(dian)流ID的控制能力，即(ji)漏极(ji)电(dian)流ID变化(hua)量与(yu)栅源电(dian)压(ya)(ya)UGS变化(hua)量的比值。gM是衡量场效应管(guan)放大能力的重要参(can)数。
BVDS—漏源(yuan)击穿(chuan)电(dian)(dian)压。是指栅源(yuan)电(dian)(dian)压UGS一定时，场效应(ying)管(guan)正常工作所能承受的最大漏源(yuan)电(dian)(dian)压。这是一项极限参数(shu)，加(jia)在场效应(ying)管(guan)上(shang)的工作电(dian)(dian)压必须小于BVDS.
PDSM—最大耗散功率。是(shi)(shi)一(yi)项极限(xian)参数(shu)，是(shi)(shi)指场(chang)效应(ying)管性能(neng)不变(bian)坏时(shi)所允许(xu)的最大漏源耗散功率。使用时(shi)，场(chang)效应(ying)管实际功耗应(ying)小于PDSM并留有一(yi)定余量。
IDSM—最大漏源(yuan)电流。是一项极限(xian)参数，是指场效应管(guan)正常工作(zuo)时(shi)，漏源(yuan)间所允(yun)许通(tong)过的(de)最大电流。场效应管(guan)的(de)工作(zuo)电流不应超过IDSM。
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